Optical Measurement Technologies for High-Frequency Electronics

In this paper a new three-dimensional large-size optical measurement system by laser radar has been proposed in combination of double-optic circuit measuring technology, ultra-high frequency modulation technology and laser intellectual tracing and location technology. The system can measure 3d shape unconnectedly for lager-size object, which has the advantages of high accuracy, automatic measurement and freedom from being influenced by material and light ray.

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External Modulation Laser Module Assembly for Improving Measurement Performance of Homodyne Interferometry

Sensors ◽

10.3390/s20195652 ◽

2020 ◽

Vol 20 (19) ◽

pp. 5652

Author(s):

Tao Zhang ◽

Tao Sun ◽

Jiean Li ◽

Xingyu Zhao ◽

Jiwen Cui

Keyword(s):

Light Source ◽

High Frequency ◽

Phase Modulation ◽

Optical Measurement ◽

Modulation Amplitude ◽

External Modulation ◽

Measurement Resolution ◽

Laser Module ◽

Switching Mode ◽

Nonlinear Errors

An external modulation laser module assembly (EMLMA) is proposed to suppress nonlinear errors in an interferometry system and improve its measurement performance. The EMLMA employs both phase modulation with radio frequency signal and a specific modulation amplitude switching mode, enabling the suppression of noise introduced by spurious reflections. The amplitude modulation reduces the influence of stray and background light by transforming the signal of interest to a high-frequency bandwidth. Experimental results show that the measurement error and stability of the interferometry system are significantly improved using the proposed light source module. After modulation, the spurious reflection-induced offset is decreased, and the measurement resolution improves from 7 to 2 nm. The EMLMA can replace the light source of any interferometric measurement system without altering the optical measurement structure. The proposed method reduces the influence of nonlinear errors in homodyne interferometry and provides a basis for further improvement of the interferometry performance.

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The Microstructure of Steatite (Protoenstatite)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118102 ◽

1985 ◽

Vol 43 ◽

pp. 236-237

Author(s):

W. E. Lee ◽

A. H. Heuer

Keyword(s):

High Frequency ◽

Glass Ceramics ◽

Magnesium Silicate ◽

Beam Current ◽

Glassy Matrix ◽

Angle Of Incidence ◽

X Ray ◽

Mechanical And Electrical Properties ◽

Argon Ions ◽

High Temperature Polymorph

IntroductionTraditional steatite ceramics, made by firing (vitrifying) hydrous magnesium silicate, have long been used as insulators for high frequency applications due to their excellent mechanical and electrical properties. Early x-ray and optical analysis of steatites showed that they were composed largely of protoenstatite (MgSiO3) in a glassy matrix. Recent studies of enstatite-containing glass ceramics have revived interest in the polymorphism of enstatite. Three polymorphs exist, two with orthorhombic and one with monoclinic symmetry (ortho, proto and clino enstatite, respectively). Steatite ceramics are of particular interest a they contain the normally unstable high-temperature polymorph, protoenstatite.Experimental3mm diameter discs cut from steatite rods (∼10” long and 0.5” dia.) were ground, polished, dimpled, and ion-thinned to electron transparency using 6KV Argon ions at a beam current of 1 x 10-3 A and a 12° angle of incidence. The discs were coated with carbon prior to TEM examination to minimize charging effects.

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Simulations of high-resolution images of amorphous silicon films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014419x ◽

1986 ◽

Vol 44 ◽

pp. 544-545

Author(s):

G. Y. Fan ◽

J. M. Cowley

Keyword(s):

Electron Microscope ◽

High Frequency ◽

Fourier Transformation ◽

Amorphous Materials ◽

Low Frequency ◽

Chromatic Aberration ◽

Structure Information ◽

Frequency Components ◽

High Resolution Images ◽

Spatial Frequency Spectrum

It is well known that the structure information on the specimen is not always faithfully transferred through the electron microscope. Firstly, the spatial frequency spectrum is modulated by the transfer function (TF) at the focal plane. Secondly, the spectrum suffers high frequency cut-off by the aperture (or effectively damping terms such as chromatic aberration). While these do not have essential effect on imaging crystal periodicity as long as the low order Bragg spots are inside the aperture, although the contrast may be reversed, they may change the appearance of images of amorphous materials completely. Because the spectrum of amorphous materials is continuous, modulation of it emphasizes some components while weakening others. Especially the cut-off of high frequency components, which contribute to amorphous image just as strongly as low frequency components can have a fundamental effect. This can be illustrated through computer simulation. Imaging of a whitenoise object with an electron microscope without TF limitation gives Fig. 1a, which is obtained by Fourier transformation of a constant amplitude combined with random phases generated by computer.

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SEM image sharpness analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163174 ◽

1996 ◽

Vol 54 ◽

pp. 142-143

Author(s):

M. T. Postek ◽

A. E. Vladar

Keyword(s):

High Frequency ◽

Low Frequency ◽

Quantitative Information ◽

Primary Electron ◽

Image Sharpness ◽

Critical Dimensions ◽

Sem Image ◽

Frequency Changes ◽

Electron Microscopes ◽

Scanning Electron

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or better) at 1.0 kV accelerating voltage for the measurement of nominal 0.25-0.35 micrometer semiconductor critical dimensions. Testing and proving that the instrument is performing at this level on a day-by-day basis is an industry need and concern which has been the object of a study at NIST and the fundamentals and results are discussed in this paper.In scanning electron microscopy, two of the most important instrument parameters are the size and shape of the primary electron beam and any image taken in a scanning electron microscope is the result of the sample and electron probe interaction. The low frequency changes in the video signal, collected from the sample, contains information about the larger features and the high frequency changes carry information of finer details. The sharper the image, the larger the number of high frequency components making up that image. Fast Fourier Transform (FFT) analysis of an SEM image can be employed to provide qualitiative and ultimately quantitative information regarding the SEM image quality.

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Real Ear Sound Pressure Levels Developed by Three Portable Stereo System Earphones

American Journal of Audiology ◽

10.1044/1059-0889.0104.52 ◽

1992 ◽

Vol 1 (4) ◽

pp. 52-55 ◽

Cited By ~ 4

Author(s):

Gail L. MacLean ◽

Andrew Stuart ◽

Robert Stenstrom

Keyword(s):

High Frequency ◽

Sound Pressure ◽

Low Frequency ◽

Test System ◽

Output Frequency ◽

Frequency Effects ◽

Adult Men ◽

Frequency Responses ◽

Significant Difference ◽

Sound Pressure Levels

Differences in real ear sound pressure levels (SPLs) with three portable stereo system (PSS) earphones (supraaural [Sony Model MDR-44], semiaural [Sony Model MDR-A15L], and insert [Sony Model MDR-E225]) were investigated. Twelve adult men served as subjects. Frequency response, high frequency average (HFA) output, peak output, peak output frequency, and overall RMS output for each PSS earphone were obtained with a probe tube microphone system (Fonix 6500 Hearing Aid Test System). Results indicated a significant difference in mean RMS outputs with nonsignificant differences in mean HFA outputs, peak outputs, and peak output frequencies among PSS earphones. Differences in mean overall RMS outputs were attributed to differences in low-frequency effects that were observed among the frequency responses of the three PSS earphones. It is suggested that one cannot assume equivalent real ear SPLs, with equivalent inputs, among different styles of PSS earphones.

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