scholarly journals Tunnelling Effect for Quadruples Potential Using Matrix Propagation Method

2020 ◽  
Vol 3 (2) ◽  
pp. 66
Author(s):  
Chilwatun Nasiroh ◽  
Bambang Supriadi ◽  
Rif'ati Dina Handayani

Semiconductor materials can be used as potential barriers to Tunnelling effects. In this study, four semiconductor materials are arranged in various ways to form a quadruple potential structure to analyze the value of the transmission coefficient. The analysis was conducted using the analytical and numerical matrix propagation method using Matlab2018a. The results confirmed that the inverted arrangement produces the same transmission coefficient value for each energy. So that there are 12 kinds of transmission coefficient values generated from 24 arrangements. The semiconductor material composition with the most considerable transmission coefficient value is ADCB and BCDA, which have a value of 0.8087. The variation of the arrangement affects the value of the transmission coefficient so that it can be used as a guideline for selecting the arrangement that produces the most optimum value of the transmission coefficient from various possible arrangements.

2012 ◽  
Vol 67 (6-7) ◽  
pp. 338-346
Author(s):  
Chao-Qing Dai ◽  
Hai-Ping Zhu ◽  
Chun-Long Zheng

We construct four types of analytical soliton solutions for the higher-order nonlinear Schrödinger equation with distributed coefficients. These solutions include bright solitons, dark solitons, combined solitons, and M-shaped solitons. Moreover, the explicit functions which describe the evolution of the width, peak, and phase are discussed exactly.We finally discuss the nonlinear soliton tunnelling effect for four types of femtosecond solitons


2015 ◽  
Vol 3 (1) ◽  
pp. 128-143 ◽  
Author(s):  
Jizhou Song ◽  
Xue Feng ◽  
Yonggang Huang

Abstract Stretchable electronics enables lots of novel applications ranging from wearable electronics, curvilinear electronics to bio-integrated therapeutic devices that are not possible through conventional electronics that is rigid and flat in nature. One effective strategy to realize stretchable electronics exploits the design of inorganic semiconductor material in a stretchable format on an elastomeric substrate. In this review, we summarize the advances in mechanics and thermal management of stretchable electronics based on inorganic semiconductor materials. The mechanics and thermal models are very helpful in understanding the underlying physics associated with these systems, and they also provide design guidelines for the development of stretchable inorganic electronics.


2012 ◽  
Vol 586 ◽  
pp. 145-150
Author(s):  
You Lin Zhang ◽  
Wan Quan Yang ◽  
Hua Li Ma ◽  
Fan Guang Zeng

The conducting chains in printed CNT film were considered as (MI)iV or (MI)i-1MV configuration. The transport and field emission of electrons in printed CNT film can be considered as tunneling conduction. The transmission coefficient of an insulator barrier surrounding a CNT was calculated via quantum mechanical principle. When an electric field is applied to CNTs, the barrier of residual was considered as a group of rectangular potential barriers. The total transmission coefficient for a residual-covered emitter during emitting was solved numerically from the product of the two transmission coefficient for the potential barriers of residual and the vacuum level.


2019 ◽  
Vol 1211 ◽  
pp. 012034
Author(s):  
B Supriadi ◽  
Z R Ridlo ◽  
Yushardi ◽  
C I W Nugroho ◽  
J Arsanti ◽  
...  

2002 ◽  
Vol 20 (3) ◽  
pp. 365-376 ◽  
Author(s):  
M. Bouhram ◽  
N. Dubouloz ◽  
M. Hamelin ◽  
S. A. Grigoriev ◽  
M. Malingre ◽  
...  

Abstract. The Interball-2 spacecraft travels at altitudes extending up to 20 000 km, and becomes positively charged due to the low-plasma densities encountered and the photoemission on its sunlit surface. Therefore, a knowledge of the spacecraft potential Fs is required for correcting accurately thermal ion measurements on Interball-2. The determination of Fs  is based on the balance of currents between escaping photoelectrons and incoming plasma electrons. A three-dimensional model of the potential structure surrounding Interball-2, including a realistic geometry and neglecting the space-charge densities, is used to find, through particle simulations, current-voltage relations of impacting plasma electrons Ie (Fs ) and escaping photoelectrons Iph (Fs ). The inferred relations are compared to analytic relationships in order to quantify the effects of the spacecraft geometry, the ambient magnetic field B0 and the electron temperature Te . We found that the complex geometry has a weak effect on the inferred currents, while the presence of B0 tends to decrease their values. Providing that the photoemission saturation current density Jph0 is known, a relation between Fs and the plasma density Ne can be derived by using the current balance. Since Jph0 is critical to this process, simultaneous measurements of Ne from Z-mode observations in the plasmapause, and data on the potential difference Fs  - Fp  between the spacecraft and an electric probe (p) are used in order to reverse the process. A value Jph0 ~ = 32 µAm-2 is estimated, close to laboratory tests, but less than typical measurements in space. Using this value, Ne and Fs  can be derived systematically from electric field measurements without any additional calculation. These values are needed for correcting the distributions of low-energy ions measured by the Hyperboloid experiment on Interball-2. The effects of the potential structure on ion trajectories reaching Hyperboloid are discussed quantitatively in a companion paper.Key words. Space plasma physics (charged particle motion and acceleration; numerical simulation studies; spacecraft sheaths, wakes, charging)


RSC Advances ◽  
2016 ◽  
Vol 6 (103) ◽  
pp. 100866-100875 ◽  
Author(s):  
Liguo Wei ◽  
Shishan Chen ◽  
Yulin Yang ◽  
Yongli Dong ◽  
Weina Song ◽  
...  

An optimal amount of rGO modified TiO2 semiconductor material could enhance the efficiency of DSSCs.


Mathematics ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 121
Author(s):  
Aatef Hobiny ◽  
Ibrahim Abbas ◽  
Marin Marin

This article focuses on the study of redial displacement, the carrier density, the conductive and thermodynamic temperatures and the stresses in a semiconductor medium with a spherical hole. This study deals with photo-thermoelastic interactions in a semiconductor material containing a spherical cavity. The new hyperbolic theory of two temperatures with one-time delay is used. The internal surface of the cavity is constrained and the density of carriers is photogenerated by a heat flux at the exponentially decreasing pulse boundaries. The analytical solutions by the eigenvalues approach under the Laplace transformation approaches are used to obtain the solution of the problem and the inversion of the Laplace transformations is performed numerically. Numerical results for semiconductor materials are presented graphically and discussed to show the variations of physical quantities under the present model.


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