310 Micro-Fabrication of Single Crystal Silicon by Using Combination Technique of Nano-scale Machining and Alkaline Etching

2001 ◽  
Vol 2001.3 (0) ◽  
pp. 85-86
Author(s):  
Noboru MORITA ◽  
Liyi CHEN ◽  
Kiwamu ASHIDA
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Micro Fabrication ◽  
Combination Technique ◽  
Nano Scale ◽  
Alkaline Etching

A Study on the Nanoindentation Behaviour of Single Crystal Silicon Using Hybrid MD-FE Method

2008 ◽  
Vol 32 ◽  
pp. 259-262 ◽  
Author(s):  
Akbar Afaghi Khatibi ◽  
Bohayra Mortazavi
Keyword(s):  
Molecular Dynamics ◽  
Finite Element ◽  
Single Crystal ◽  
Material Properties ◽  
Single Crystal Silicon ◽  
Dynamics Simulation ◽  
Fe Method ◽  
Crystal Silicon ◽  
Element Analysis ◽  
Nano Scale

Developing new techniques for the prediction of materials behaviors in nano-scales has been an attractive and challenging area for many researches. Molecular Dynamics (MD) is the popular method that is usually used to simulate the behavior of nano-scale material. Considering high computational costs of MD, however, has made this technique inapplicable as well as inflexible in various situations. To overcome these difficulties, alternative procedures are thought. Considering its capabilities, Finite Element Analysis (FEA) seems to be the most appropriate substitute for MD simulations in most cases. But since the material properties in nano, micro, and macro scales are different, therefore to use FEA methods in nano-scale modeling one must use material properties appropriate to that scale. To this end, a previously developed Hybrid Molecular Dynamics-Finite Element (HMDFE) approach was used to investigate the nanoindentation behavior of single crystal silicon with Berkovich indenter. In this study, a FEA model was developed based on the material properties extracted from molecular dynamics simulation of uniaxial tension test on single crystal Silicon. Eventually, by comparison of FEA results with experimental data, the validity of this new technique for the prediction of nanoindentation behavior of Silicon was concluded.

Molecular Dynamics Study on Phonon Dynamics in Single-Crystal Silicon and Argon

2007 ◽  
Author(s):  
Peng Xiao ◽  
Mitsuhiro Matsumoto ◽  
Tomohisa Kunisawa
Keyword(s):  
Molecular Dynamics ◽  
Single Crystal ◽  
Semiconductor Industry ◽  
Single Crystal Silicon ◽  
Single Mode ◽  
Computational Method ◽  
Time Step ◽  
Crystal Silicon ◽  
Nano Scale ◽  
Phonon Dynamics

Modern semiconductor industry and nanotechnology have profoundly impacted the study on thermal transport in dielectric solids such as single-crystal silicon. For these heat conduction phenomena whose characteristic length and time shrink into nano scale, it is efficient to utilize phonon dynamics as a promising approach to investigate the fundamental features of heat transfer at nano scale as well as the distinguished thermal properties of nano-materials. A new computational method is proposed to explore phonon dynamics in single-crystals on the basis of classical Molecular Dynamics technique. This method utilizes the Fourier-Laplace transformation of molecular trajectory, with anharmonicity of molecular vibrations accounted in the investigation on phonon dynamics. Instantaneous mode-dependent energy of phonons and density of vibration state is obtained at each simulated time step. Mode-dependent phonon relaxation is simulated and verified with perturbation method, which gives a way to measure relaxation time of single-mode phonon. The feasibility of the proposed scheme is confirmed by a series of simulations which are carried out in this paper on 1) monatomic crystal of argon with FCC structure and 2) diatomic crystal of silicon with diamond structure, under Lennard-Jones 6-12 potential and Tersoff-1989 model, respectively.

Hrem and Nano-Scale Microanalysis of the Titanium-Silicon Interfacial Reaction

1990 ◽  
Vol 183 ◽  
Author(s):  
T. Kouzaki ◽  
S. Ogawas ◽  
S. Nakamura
Keyword(s):  
Amorphous Alloy ◽  
Single Crystal ◽  
Interfacial Reaction ◽  
Single Crystal Silicon ◽  
High Resolution Electron Microscopy ◽  
Composition Analysis ◽  
Alloy Formation ◽  
Crystal Silicon ◽  
Nano Scale ◽  
Titanium Silicon

AbstractThe interfacial reaction of titanium with single crystal silicon has been characterized using high-resolution electron microscopy(HREM) combined with nano-scale microanalysis. HREM shows that there is an amorphous interdiffused alloy formation at titanium-silicon interfaces. The reacted layer is about 1.7nm thick for single crystal silicon, but is 2.5nm thick for sputter-amorphized silicon. Annealing increases the thickness of the amorphous alloy. We have used high-spatial-resolution microanalysis to obtain energy dispersive spectrometry (EDS) using a 2nm probe size. The results clearly show that reliable composition analysis can be obtained at this level since some of the layers are only about 2nm thick. It was found that the amorphous alloy composition was Ti55Si45 for the sputter-amorphized silicon. Futhermore we ascertained no induced reaction by 2nm probe electron beam irradiation.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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