The curvature measurement of Sagnac loop based on PMF

2010 ◽  
Author(s):  
Yu Zhao ◽  
Yongxing Jin ◽  
Huaping Gong ◽  
Jianfeng Wang
Keyword(s):  
Curvature Measurement

Experimental Measurement and Analysis of Microelectronics Application Polymer Materials Properties

1992 ◽  
Vol 264 ◽  
Author(s):  
Y.H. Jeng ◽  
Mirng-Ji Lii
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Silicon Substrate ◽  
Coupling Effect ◽  
Measurement Techniques ◽  
Epoxy Adhesive ◽  
Polymer Materials ◽  
Fea Model ◽  
Curvature Measurement ◽  
Substrate Curvature

AbstractA laser based surface scanning technique was utilized to measure the polyimide coated silicon wafer curvature resulting from thermal cycling and mismatch, Meanwhile, mechanical properties of polyimide thin film were characterized by DMA, TMA and tensile test. Based on the obtained material properties, A FEA model was developed to analyze the experimental results -reasonable correlation was obtained.Similar approaches were taken one step further in the MCM silicon substrate curvature measurement. In a MCM package with silicon substrate, epoxy adhesive, and ceramic package, substrate warpage was developed in a thermal cycle due to thermal mismatch between the substrate and the package and coupling effect linked by epoxy adhesive. Three different substrate curvature measurement techniques were applied to identify the substrate curvature and epoxy thin film properties were also well characterized. A 3D FEA model incorporating with the epoxy material properties was developed to analyze the substrate warpage and investigate an optimal package design.

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Automating Spine Curvature Measurement in Volumetric Ultrasound via Adaptive Phase Features

2020 ◽  
Vol 46 (3) ◽  
pp. 828-841 ◽  
Author(s):  
Guang-Quan Zhou ◽  
Dong-Sheng Li ◽  
Ping Zhou ◽  
Wei-Wei Jiang ◽  
Yong-Ping Zheng
Keyword(s):  
Curvature Measurement ◽  
Spine Curvature ◽  
Volumetric Ultrasound

Thermo-Mechanical Stresses in Laminated Polymer Films on Silicon Substrates

1998 ◽  
Vol 515 ◽  
Author(s):  
Jin S. Kim ◽  
Kyung W. Paik ◽  
Seung H. Oh ◽  
Hyun S. Seo
Keyword(s):  
Polymer Films ◽  
Coefficient Of Thermal Expansion ◽  
Relaxation Effect ◽  
Mechanical Stresses ◽  
Silicon Substrates ◽  
Elastic Model ◽  
Individual Layer ◽  
Number Of Layers ◽  
Curvature Measurement ◽  
Lamination Process

ABSTRACTThermo-mechanical stresses in MCM-D substrate are important reliability and fabrication issues. The differences in coefficient of thermal expansion (CTE) between substrate, polymer, and metal leads to complicated stress fields in multilevel interconnect structures. While the majority of reports in the literature have focused on spin-coated polyimides, this paper mainly focuses on laminated polymer dielectrics. This study uses material sets representing typical MCM-D structures to monitor the stress level in the polymer films. The substrate deflection caused by composite stresses during fabrication and thermal cycling test is determined by a curvature measurement technique. A simple analytical model which predicts a stress contribution from each individual layer during MCM-D substrate fabrication is proposed and developed by computer simulation as well. The composite stress or bowing in multilayer structures is due to the summation of each individual layer contribution. From a thermo-mechanical stress viewpoint, Ultem® thermoplastic and the epoxy thermoset adhesive exhibit quite different behaviors. In case of the epoxy thermoset adhesive, the amount of bowing increases as number of layers increases and its behavior can be predicted by an elastic model. However, in the case of the Ultem® thermoplastic adhesive, bow values become stabilized as number of layers increases because of the stress relaxation effect of the thermoplastic adhesive during lamination process above Tg of the Ultem® thermoplastic.

Stress Hysteresis and Thermal-Mechanical Behavior of PECVD Silicon Nitride and Ebeam Aluminum Films for Microbolometer Applications

2004 ◽  
Vol 854 ◽  
Author(s):  
Shusen Huang ◽  
Xin Zhang
Keyword(s):  
Silicon Nitride ◽  
Mechanical Behavior ◽  
Measurement System ◽  
Low Cost ◽  
High Sensitivity ◽  
Central Idea ◽  
Aluminum Films ◽  
Uncooled Microbolometer ◽  
Curvature Measurement ◽  
Stress Hysteresis

ABSTRACTUncooled cantilever-based microbolometer arrays received more attention recently due to high sensitivity and low cost. The central idea is built on the deflection of a bilayer SiNx/Al material upon the temperature change. The thermal-mechanical behavior of the bilayer is significant for the performance of the microbolometers. In this paper, we perform thermal cyclings to aluminum and SiNx films. The CTEs and the stress evolutions were measured using a curvature measurement system. The curvature profile of a SiNx/Al/Si component was predicted using an extension of Stoney's formula, well agreeing with the experimental results. This work demonstrates fundamental mechanics issues in bilayer SiNx/Al components, which have a great potential for the use in uncooled microbolometer applications.

Residual Stress Analysis of Epoxy Coating/Substrate System Using Curvature Measurement Method

2007 ◽  
Vol 345-346 ◽  
pp. 793-796
Author(s):  
Sang Soon Lee ◽  
In Wook Jeon ◽  
Young Chol Chang
Keyword(s):  
Boundary Element Method ◽  
Residual Stresses ◽  
Boundary Element ◽  
Normal Stress ◽  
Measurement Method ◽  
Experimental Result ◽  
Singular Stress ◽  
Curvature Measurement ◽  
Si Wafer ◽  
Element Method

The residual stresses in an epoxy film coated on Si wafer induced during polymerization at room temperature are investigated. The curvature measurement method and the boundary element method (BEM) are employed to investigate the residual stresses. An epoxy film is coated on a relatively thick Si wafer. The normal stress across thickness of the epoxy film is estimated from wafer curvature measurements to be 15- 20MPa . The boundary element method is employed to investigate the whole stresses in the film. The numerical result for the normal stress across thickness of the film, σ xx , shows good agreement with the experimental result obtained by using the curvature measurement method. The singular stress is observed near the interface corner. Such residual stresses are large enough to initiate interface delamination to relieve the residual stresses.

Slope and curvature measurement by a double-frequency-grating shearing interferometer

1979 ◽  
Vol 19 (4) ◽  
pp. 129-137 ◽  
Author(s):  
A. Assa ◽  
J. Politch ◽  
A. A. Betser
Keyword(s):  
Double Frequency ◽  
Curvature Measurement
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