Fabrication and Characterization of Er-doped ZnO Films Grown by Pulsed E-beam Deposition

We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500°C for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an ohmic line and improvement in electrical conductivity when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time.

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Nd-doped ZnO films grown on c-cut sapphire by pulsed-electron beam deposition under oblique incidence

Applied Surface Science ◽

10.1016/j.apsusc.2021.150287 ◽

2021 ◽

pp. 150287

Author(s):

M. Nistor ◽

E. Millon ◽

C. Cachoncinlle ◽

C. Ghica ◽

C. Hebert ◽

...

Keyword(s):

Electron Beam ◽

Oblique Incidence ◽

Zno Films ◽

Pulsed Electron Beam ◽

Electron Beam Deposition ◽

Doped Zno ◽

Beam Deposition ◽

Pulsed Electron Beam Deposition

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Fabrication and Characterization of Er³+ Doped Cadmium Silicate Glasses

2011 Symposium on Photonics and Optoelectronics (SOPO) ◽

10.1109/sopo.2011.5780719 ◽

2011 ◽

Cited By ~ 1

Author(s):

Jingxia Niu ◽

Jing Li ◽

Wei Zhao ◽

Jing Li

Keyword(s):

Silicate Glasses ◽

Fabrication And Characterization ◽

Er Doped

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Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424868 ◽

2010 ◽

Author(s):

Cheng-Ying Chen ◽

Yen-Chun Chao ◽

Chin-An Lin ◽

Jian-Wei Lo ◽

Jr-Hau He

Keyword(s):

Zno Nanorod ◽

Nanorod Arrays ◽

Zno Nanorod Arrays ◽

Broadband Antireflection ◽

Doped Zno ◽

Er Doped

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Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

Nanoscale Research Letters ◽

10.1186/1556-276x-7-29 ◽

2012 ◽

Vol 7 (1) ◽

pp. 29 ◽

Cited By ~ 19

Author(s):

Seong-Ho Baek ◽

Bum-Young Noh ◽

Il-Kyu Park ◽

Jae Hyun Kim

Keyword(s):

Solar Cells ◽

Seed Layer ◽

Antireflection Coating ◽

Zno Nanorod ◽

Doped Zno ◽

Fabrication And Characterization

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Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

MRS Proceedings ◽

10.1557/proc-1071-f03-05 ◽

2008 ◽

Vol 1071 ◽

Author(s):

Koji Aizawa

Keyword(s):

Leakage Current ◽

Vinylidene Fluoride ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Tio2 Films ◽

Gate Leakage Current ◽

Poly Vinylidene Fluoride ◽

Doped Zno ◽

Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

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Characterization of AI-doped ZnO Films Deposited by DC Magnetron Sputtering

Journal of the Korean institute of surface engineering ◽

10.5695/jkise.2007.40.3.107 ◽

2007 ◽

Vol 40 (3) ◽

pp. 107-112 ◽

Cited By ~ 3

Author(s):

Yi-Seop Park ◽

Seung-Ho Lee ◽

Pung-Keun Song

Keyword(s):

Magnetron Sputtering ◽

Zno Films ◽

Dc Magnetron Sputtering ◽

Doped Zno

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Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.560-561.820 ◽

2012 ◽

Vol 560-561 ◽

pp. 820-824

Author(s):

Yue Zhi Zhao ◽

Fei Xiong ◽

Guo Mian Gao ◽

Shi Jing Ding

Keyword(s):

Thin Films ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

Flat Surfaces ◽

Atomic Force ◽

Mn Content ◽

Doped Zno ◽

Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

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