Er-doped ZnO films grown by pulsed e-beam deposition

2007 ◽  
Vol 19 (26) ◽  
pp. 266216 ◽  
Author(s):  
Z Pan ◽  
S H Morgan ◽  
A Ueda ◽  
R Aga ◽  
A Steigerwald ◽  
...  
Keyword(s):  
Er Doped ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 3262 ◽  
Author(s):  
Si-Qiu Li ◽  
Cheng-Bao Yao ◽  
Yu Cai ◽  
Yue Han ◽  
Ke-Xin Zhang ◽  
...  

2008 ◽  
Vol 148 (1-3) ◽  
pp. 35-39 ◽  
Author(s):  
Fanyong Ran ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Masaki Tanemura ◽  
Yongge Cao ◽  
...  

2015 ◽  
Vol 15 (10) ◽  
pp. 7664-7670 ◽  
Author(s):  
Bunyod Allabergenov ◽  
Seok-Hwan Chung ◽  
Sungjin Kim ◽  
Byeongdae Choi

This work demonstrates the fabrication of Cu-doped ZnO films by Cu solution coating method. Cu ink was spin coated on ZnO thin films prepared by e-beam deposition. After curing and annealing at high temperatures, structural, morphological and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectrofluorometer, respectively. The XRD results showed that ZnO films formed polycrystalline with a hexagonal wurtzite structure, and the grain size increased with increasing the annealing temperature from 500 to 850 °C. The changes in lattice parameters were caused by grain size, strain, and residual stress. Morphological analysis have revealed that the Cu-doped ZnO film after annealing at 500 °C has flat surface with uniformly distributed grain size, which became porous after higher temperature annealing process. Energy dispersive spectroscopy (EDS) and photoluminescence spectras have shown the presence of Zn, Cu, and O elements, and combined violet, blue, green and weak red emissions between 350 and 650 nm in the ZnO films, respectively.


2006 ◽  
Vol 89 (4) ◽  
pp. 043116 ◽  
Author(s):  
T. M. Williams ◽  
D. Hunter ◽  
A. K. Pradhan ◽  
I. V. Kityk
Keyword(s):  

2008 ◽  
Vol 1111 ◽  
Author(s):  
Zhengda Pan ◽  
S. H. Morgan ◽  
A. Ueda ◽  
R. Aga ◽  
H. Y. Xu ◽  
...  

AbstractPhotoluminescence (PL) of Er-doped ZnO nanoparticle films was studied. The films were fabricated using e-beam evaporation. The films were subsequently annealed at 700 °C in air for an hour. The atomic force microscopy (AFM) image revealed nano-sized ZnO particles. PL was measured at two excitation wavelengths, 325 and 514.5 nm. The 325 nm is used for exciting the ZnO host semiconductor and 514.5 nm is used for directly exciting Er3+ ions in the ZnO films. Er3+ luminescence was observed from the annealed film using either indirect (325 nm) or direct (514.5 nm) excitations. It has been found that the indirect excitation is about 40 times more efficient than the direct excitation in producing 1.54 μm PL. With indirect excitation, the Er3+ luminescence observed is attributed to energy transfer from ZnO host to the Er3+ ions doped. Energy transfer from e-h pairs resulting from ZnO host excitation may provide efficient routes for exciting Er3+ ions inside nano-crystalline particles of the films.


2005 ◽  
Vol 20 (9) ◽  
pp. 2578-2582 ◽  
Author(s):  
Yukari Ishikawa ◽  
Mitsuhiro Okamoto ◽  
Shigeru Tanaka ◽  
Dai Nezaki ◽  
N. Shibata

Intensity variation of 1.5 μm light emission at room temperature from Er-doped epitaxial and polycrystal ZnO films depending on annealing temperature (773–1373 K) was studied. As-grown Er-doped epitaxial ZnO film emitted 1.5 μm photoluminescence(PL) higher than as-grown Er-doped polycrystal ZnO. It was found that the annealing in air increases PL intensity and the maximum PL intensity was obtained by annealing at optimal temperature (1073 K). Spectrum shape and intensity of 1.5 μm PL of Er-doped epitaxial ZnO after annealing at 1073 K resembled those of Er-doped polycrystal ZnO after annealing at 1073 K. X-ray diffraction measurement demonstrated that annealing improves crystal quality of Er-doped ZnO film. We assumed that the process of 1.5 μm light emission is dependent on local area placement of Zn and O atoms around Er as well as crystal quality of ZnO.


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