Ion Beam Figuring (IBF) Solutions for the Correction of Surface Errors of Small High Performance Optics

Ion Beam Figuring Fabricate Effect with Different Removal Sizes

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.552.142 ◽

2013 ◽

Vol 552 ◽

pp. 142-146

Author(s):

Yong Qiang Gu

Keyword(s):

Spatial Frequency ◽

Ion Beam ◽

Influence Factors ◽

Frequency Range ◽

Surface Errors ◽

Power Spectral ◽

The Difference ◽

Lens Surface ◽

Ion Beam Figuring

Ion Beam Figure (IBF) is believed to be one of the most effective technics that can fabricate lens with nano or even sub-nano accuracy. For different sizes of IBF removal functions, the correct effects in different spatial frequency range are different. Power Spectral Density (PSD) curve can describe surface errors in full spatial frequency range, so it is a very convenient way to evaluate the quality of lens’ surface. In this paper, firstly, the principles of IBF and PSD are introduced briefly; Secondly, IBF removal functions with sizes from 2 mm to 15 mm are generated. A lens with surface error more than PV value 400nm is simulated with different sizes of IBF removal functions by Lucy-Richardson algorithm. Finally, experiments are done by IBF plant. A lens is fabricated by different sizes of removal functions and the fabricate results are tested by interferometer precisely and calculated to PSD curves. By the comparison of these curves, the IBF fabricate effects with different removal sizes are analyzed, which show that the smaller the removal size, the better the removal effect in higher spatial frequency range, but in the meantime, it will take a much longer time. Also the reasons of the difference between theory simulation and actual fabrication result are taken into account, and several influence factors are analyzed.

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Ion Beam Figuring (IBF) Solutions for High Performance Optics Surface Finishing from Meter to Millimeter Spatial Wavelength Range(Advances in non-traditional machining)

Proceedings of International Conference on Leading Edge Manufacturing in 21st century LEM21 ◽

10.1299/jsmelem.2005.2.589 ◽

2005 ◽

Vol 2005.2 (0) ◽

pp. 589-594

Author(s):

Axel SCHINDLER ◽

Thomas HANSEL ◽

Andreas NICKEL ◽

Frank FROST ◽

Hans-Jurgen THOMAS ◽

...

Keyword(s):

Wavelength Range ◽

High Performance ◽

Ion Beam ◽

Surface Finishing ◽

Ion Beam Figuring

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Phase-Shifting Electron Holography for Accurate Measurement of Potential Distributions in Organic and Inorganic Semiconductors

Microscopy ◽

10.1093/jmicro/dfaa061 ◽

2020 ◽

Author(s):

Kazuo Yamamoto ◽

Satoshi Anada ◽

Takeshi Sato ◽

Noriyuki Yoshimoto ◽

Tsukasa Hirayama

Keyword(s):

High Performance ◽

Focused Ion Beam ◽

Phase Measurement ◽

Ion Beam ◽

Functional Materials ◽

Phase Shifting ◽

Future Research ◽

Electron Holography ◽

Preparation Technique ◽

Inorganic Semiconductors

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

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REPLICATION OF NANO/MICRO QUARTZ MOLD BY HOT EMBOSSING AND ITS APPLICATION TO BOROSILICATE GLASS EMBOSSING

International Journal of Modern Physics B ◽

10.1142/s0217979208051674 ◽

2008 ◽

Vol 22 (31n32) ◽

pp. 6118-6123 ◽

Cited By ~ 1

Author(s):

SUNG-WON YOUN ◽

CHIEKO OKUYAMA ◽

MASHARU TAKAHASHI ◽

RYUTARO MAEDA

Keyword(s):

High Performance ◽

Focused Ion Beam ◽

Ion Beam ◽

Hot Embossing ◽

High Fidelity ◽

Borosilicate Glasses ◽

Mems Devices ◽

Barrier Layers ◽

Multiple Copies ◽

Micro Electromechanical System

Glass hot-embossing is one of essential techniques for the development of high-performance optical, bio, and chemical micro electromechanical system (MEMS) devices. This method is convenient, does not require routine access to clean rooms and photolithographic equipment, and can be used to produce multiple copies of a quartz mold as well as a MEMS component. In this study, quartz molds were prepared by hot-embossing with the glassy carbon (GC) masters, and they were applied to the hot-emboss of borosilicate glasses. The GC masters were prepared by dicing and focused ion beam (FIB) milling techniques. Additionally, the surfaces of the embossed quartz molds were coated with molybdenum barrier layers before embossing borosilicate glasses. As a result, micro-hot-embossed structures could be developed in borosilicate glasses with high fidelity by hot embossing with quartz molds.

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