Engineering the anisotropy of AlAs wet oxidation using silicon implantation

Abstract The paper addresses an electro-chemical method called wet oxidation potential technique for determining the susceptibility of coal to spontaneous combustion. Altogether 78 coal samples collected from thirteen different mining companies spreading over most of the Indian Coalfields have been used for this experimental investigation and 936 experiments have been carried out by varying different experimental conditions to standardize this method for wider application. Thus for a particular sample 12 experiments of wet oxidation potential method were carried out. The results of wet oxidation potential (WOP) method have been correlated with the intrinsic properties of coal by carrying out proximate, ultimate and petrographic analyses of the coal samples. Correlation studies have been carried out with Design Expert 7.0.0 software. Further, artificial neural network (ANN) analysis was performed to ensure best combination of experimental conditions to be used for obtaining optimum results in this method. All the above mentioned analysis clearly spelt out that the experimental conditions should be 0.2 N KMnO4 solution with 1 N KOH at 45°C to achieve optimum results for finding out the susceptibility of coal to spontaneous combustion. The results have been validated with Crossing Point Temperature (CPT) data which is widely used in Indian mining scenario.

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Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

10.31399/asm.cp.istfa1998p0011 ◽

1998 ◽

Author(s):

I. De Wolf ◽

G. Groeseneken ◽

H.E. Maes ◽

M. Bolt ◽

K. Barla ◽

...

Keyword(s):

Raman Spectroscopy ◽

Mechanical Stress ◽

Defect Formation ◽

Active Area ◽

Wet Oxidation ◽

Leakage Currents ◽

Shallow Trench Isolation ◽

Micro Raman Spectroscopy ◽

Silicon Devices ◽

Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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Mass Transfer Limited Wet Oxidation in Trickle-Bed Reactor

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19981938 ◽

1998 ◽

Vol 63 (11) ◽

pp. 1938-1944 ◽

Cited By ~ 1

Author(s):

Vratislav Tukač ◽

Jiří Vokál ◽

Jiří Hanika

Keyword(s):

Supported Catalyst ◽

Reaction Rates ◽

Gas Transfer ◽

Wet Oxidation ◽

Reactor Performance ◽

Catalytic Wet Oxidation ◽

Environmental Application ◽

Trickle Bed Reactor ◽

Fine Glass ◽

Trickle Bed

Catalytic activity of CuO-supported catalyst in phenol oxidation, and the influence of reaction conditions, viz. temperature (125-170 °C), oxygen partial pressure (1-7 MPa) and liquid feed (30-760 ml h-1), in the continuous operation using 17.9 mm i.d. trickle-bed reactor is presented. The hydrodynamic impact on the three-phase trickle-bed reactor performance in an environmental application of catalytic wet oxidation was also investigated. The results of trickle-bed operation were strongly influenced by wetting efficiency. An insufficient catalyst wetting can be to compensated by filling the catalyst bed voids by fine glass spheres. In the case of the gas transfer limited reaction, a better wetting of the catalyst can lead to worse reactor performance due to lower reaction rates.

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