Very fast metal-semiconductor-metal ultraviolet photodectors on GaN with submicron finger width

2003 ◽  
Author(s):  
J. Li ◽  
W. Donaldson ◽  
T. Hsiang
Keyword(s):  
Metal Semiconductor Metal ◽  
Finger Width

Tera‐hertz GaAs metal‐semiconductor‐metal photodetectors with 25 nm finger spacing and finger width

1992 ◽  
Vol 61 (4) ◽  
pp. 477-479 ◽  
Author(s):  
S. Y. Chou ◽  
Y. Liu ◽  
P. B. Fischer
Keyword(s):  
Metal Semiconductor Metal ◽  
Finger Width

scholarly journals Mechanism of Defects and Electrode Structure on the Performance of AlN-based Metal Semiconductor Metal Detectors

2021 ◽  
Author(s):  
Guanghui Li ◽  
PengBo Wang ◽  
XinRan He ◽  
YuLong Meng ◽  
Feng Liang ◽  
...  
Keyword(s):  
Response Time ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrode Structure ◽  
Detector Performance ◽  
Zero Bias ◽  
Detector Electrode ◽  
Metal Semiconductor Metal ◽  
Finger Width ◽  
Metal Detectors

Abstract We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode structure on the detector performance, it was found that the lower the dislocations can effectively reduce the dark current of the detector under zero bias voltage, and help improve the performance of the detector. The study also found that when the finger spacing of the detector remained the same and the finger width increased, the efficiency of the detector decreased, while the response time of the detector increased, when the finger width of the detector electrodes remained unchanged and the finger spacing increased, the response time of the detector increased. Therefore, the electrode finger width and finger spacing must be compromised in the design of the electrode structure to improve the performance of the AlN-based MSM detector.

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

scholarly journals The evaluation of maximum condyle-tragus distance can predict difficult airway management without exposing upper respiratory tract; a prospective observational study

2021 ◽  
Vol 21 (1) ◽  
Author(s):  
Hao Wu ◽  
Dandan Hu ◽  
Xu Chen ◽  
Xuebing Zhang ◽  
Min Xia ◽  
...  
Keyword(s):  
Respiratory Tract ◽  
Predictive Value ◽  
Prospective Observational Study ◽  
Difficult Laryngoscopy ◽  
Upper Respiratory Tract ◽  
Intubation Time ◽  
Clinical Trial Registry ◽  
Finger Width ◽  
Upper Respiratory ◽  
Interincisor Distance

Abstract Background Routine preoperative methods to assess airway such as the interincisor distance (IID), Mallampati classification, and upper lip bite test (ULBT) have a certain risk of upper respiratory tract exposure and virus spread. Condyle-tragus maximal distance(C-TMD) can be used to assess the airway, and does not require the patient to expose the upper respiratory tract, but its value in predicting difficult laryngoscopy compared to other indicators (Mallampati classification, IID, and ULBT) remains unknown. The purpose of this study was to observe the value of C-TMD to predict difficult laryngoscopy and the influence on intubation time and intubation attempts, and provide a new idea for preoperative airway assessment during epidemic. Methods Adult patients undergoing general anesthesia and tracheal intubation were enrolled. IID, Mallampati classification, ULBT, and C-TMD of each patient were evaluated before the initiation of anesthesia. The primary outcome was intubation time. The secondary outcomes were difficult laryngoscopy defined as the Cormack-Lehane Level > grade 2 and the number of intubation attempts. Results Three hundred four patients were successfully enrolled and completed the study, 39 patients were identified as difficult laryngoscopy. The intubation time was shorter with the C-TMD>1 finger group 46.8 ± 7.3 s, compared with the C-TMD<1 finger group 50.8 ± 8.6 s (p<0.01). First attempt success rate was higher in the C-TMD>1 finger group 98.9% than in the C-TMD<1 finger group 87.1% (P<0.01). The correlation between the C-TMD and Cormack-Lehane Level was 0.317 (Spearman correlation coefficient, P<0.001), and the area under the ROC curve was 0.699 (P<0.01). The C-TMD < 1 finger width was the most consistent with difficult laryngoscopy (κ = 0.485;95%CI:0.286–0.612) and its OR value was 10.09 (95%CI: 4.19–24.28), sensitivity was 0.469 (95%CI: 0.325–0.617), specificity was 0.929 (95%CI: 0.877–0.964), positive predictive value was 0.676 (95%CI: 0.484–0.745), negative predictive value was 0.847 (95%CI: 0.825–0.865). Conclusion Compared with the IID, Mallampati classification and ULBT, C-TMD has higher value in predicting difficult laryngoscopy and does not require the exposure of upper respiratory tract. Trial registration The study was registered on October 21, 2019 in the Chinese Clinical Trial Registry (ChiCTR1900026775).

CuO nanowire-based metal semiconductor metal infrared photodetector

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Menuvolu Tetseo ◽  
Prasenjit Deb ◽  
Sudem Daimary ◽  
Jay Chandra Dhar
Keyword(s):  
Infrared Photodetector ◽  
Metal Semiconductor Metal ◽  
Cuo Nanowire

scholarly journals Monolayer Twisted Graphene-Based Schottky Transistor

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4109
Author(s):  
Ramin Ahmadi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Dispersion Relation ◽  
Quantum Tunneling ◽  
Research Study ◽  
Channel Length ◽  
New Class ◽  
Metal Semiconductor Metal ◽  
The Relationship ◽  
Graphene Structures ◽  
Twisted Graphene ◽  
Device Technology

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

Perspective metal-semiconductor-metal (Mo/p-CdTe/Mo) structure for switching elements

2020 ◽  
Author(s):  
A.N. Drozdov ◽  
G.S. Khrypunov ◽  
V.O. Nikitin ◽  
A.V. Meriuts ◽  
M.G. Khrypunov ◽  
...  
Keyword(s):  
Metal Semiconductor Metal

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

2018 ◽  
Vol 123 (16) ◽  
pp. 161551 ◽  
Author(s):  
S. Walde ◽  
M. Brendel ◽  
U. Zeimer ◽  
F. Brunner ◽  
S. Hagedorn ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Open Core
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