Near-Infrared Spectroscopy with a Dispersive Waveguide Device

1997 ◽  
Vol 51 (6) ◽  
pp. 880-882 ◽  
Author(s):  
Brian R. Stallard ◽  
Robert K. Rowe ◽  
Arnold J. Howard ◽  
G. Ronald Hadley ◽  
Gregory A. Vawter ◽  
...  

Miniature, low-cost sensors are in demand for a variety of applications in industry, medicine, and environmental sciences. As a first step in developing such a sensor, we have etched a grating into a GaAs rib waveguide to serve as a wavelength-dispersive element. The device was fabricated with the techniques of metal-organic chemical vapor deposition, electron-beam lithography, optical lithography, and reactive ion-beam etching. While full integration is the eventual goal of this work, for the present, a functional spectrometer was constructed with the addition of a discrete source, sample cell, lenses, and detector. The waveguide spectrometer has a spectral resolution of 7.5 nm and a spectral dispersion of 0.11°/ nm. As presently configured, it functions in the spectral range of 1500 to 1600 nm. A demonstration of the analytical capability of the waveguide spectrometer is presented. The problem posed is the determination of diethanol amine in an ethanol solution (about 10 to 100 g/L). This procedure involves the detection of the first overtone of the NH stretch at 1545 nm in a moderately absorbing solvent background. The standard error of prediction for the determination was 5.4 g/L.

2012 ◽  
Vol 15 (1) ◽  
pp. 25 ◽  
Author(s):  
R. Beisenov ◽  
R. Ebrahim ◽  
Z.A. Mansurov ◽  
S.Zh. Tokmoldin ◽  
B.Z. Mansurov ◽  
...  

Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic structure, surface composition and morphology have been investigated by XRD, AES, SEM and AFM analysis. SiC films of 5-7 micron thickness were grown at a rate of ~ 40 nm/min on sapphire (0001) and Si (111) substrates. The films grown at low temperature (850 ºC and 900 ºC) on both substrates show crystalline 3C-SiC in the (111) orientation. XRD results show that the orientation of the crystal structure does not depend of the substrate orientation AFM pictures of SiC films grown on sapphire (0001) exhibit more crystalline order as compared to films grown on the Si (111) substrates. AES of the grown films shows that in both cases the Si peak intensity is greater than that of carbon. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to IIInitrides LED and UV photodetector fabrication and also for gas detector application.


1999 ◽  
Vol 574 ◽  
Author(s):  
J. A. Belot ◽  
A. Wang ◽  
N. L. Edleman ◽  
J. R. Babcock ◽  
M. V. Metz ◽  
...  

AbstractThis contribution describes the synthesis, characterization, and implementation of new lanthanide and main group metal-organic chemical vapor deposition precursors based on the 2,2-dimethyl-5-N-2-methoxyethylimino-3-hexanonato ligand system. The new homoleptic, fluorinefree, low melting, and highly volatile complexes are ideally suited for oxide MOCVD, and in many applications are superior to standard β-diketonates while maintaining ease of synthesis and low cost. This is explicitly demonstrated by the growth of high quality CeO2/YBa2Cu3O7-δ multilayers.


2011 ◽  
Vol 10 (04n05) ◽  
pp. 823-826
Author(s):  
S. SURESH ◽  
V. GANESH ◽  
M. BALAJI ◽  
K. BASKAR ◽  
K. ASOKAN ◽  
...  

70 MeV Si ions irradiation at the liquid nitrogen temperature (77 K) induced nanoclustering on GaN epilayers grown by Metal Organic Chemical Vapor Deposition (MOCVD) are reported. HRXRD rocking curves show that there are no localized amorphization due to irradiation. Atomic force microscopy images reveal the formation of nanoclusters on the surface of the irradiated samples. On increasing the fluence the number of modified regions on the surface increases and resulted in three dimensional growth of nanocluster due to overlapping and coalescence. X-ray photoelectron spectroscopy (XPS) studies confirm that the surface features are composed of GaN . The variation of carrier concentration and hall mobility with respect to ion fluence are also studied. The effects of ion-beam induced modifications on the structural, surface characteristics and electrical properties of GaN are studied and possible mechanisms responsible for the modifications are discussed.


Author(s):  
J.L. Batstone

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).


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