Impact of Deposition Temperature on Amorphous Zinc Oxide Thin Film Characteristics

2021 ◽  
Vol 12 (5) ◽  
pp. 806-813
Author(s):  
Omprakash S S ◽  
Naveen Kumar S K
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zno Films ◽  
Sem Images ◽  
Structural Morphology ◽  
Different Temperatures ◽  
Optical Profilometer ◽  
Pyrolysis Unit

In this paper, we discuss the deposition of amorphous zinc oxide (a: ZnO) thin film at two different temperatures by spray pyrolysis unit for Thin Film Transistor (TFT) application. The a: ZnO films were studied for its structural, morphology, composition, optical and electrical properties by means of XRD, SEM, EDAX, UV-Visible spectroscopy and I-V measurement system respectively. The film thickness characterized by optical Profilometer. The SEM images exhibit the variation in temperature leads to the crystallinity of the film. The XRD spectrum confirmed the films were amorphous in nature.

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

Capillary-Force-Pattern Formation of Indium-Zinc-Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (4) ◽  
pp. 2179-2182
Author(s):  
Hyunji Shin ◽  
Dongwook Kim ◽  
Jaehoon Park ◽  
Seong-Ho Song ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Pattern Formation ◽  
Capillary Force ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing

2019 ◽  
Vol 31 (13) ◽  
pp. 1005-1008 ◽  
Author(s):  
Tien-Hung Cheng ◽  
Sheng-Po Chang ◽  
Yen-Chi Cheng ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Aluminum Zinc Oxide
Sign in / Sign up

Export Citation Format

Share Document