Plasmas Generated with Gas Mixtures at the Atmospheric Pressure

2011 ◽  
Vol 20 (4) ◽  
Author(s):  
M. D. Calzada ◽  
J. Muñoz ◽  
R. Rincón ◽  
M. Jiménez ◽  
M. Sáez
Keyword(s):  
Surface Wave ◽  
Chemical Analysis ◽  
Metal Surface ◽  
Atmospheric Pressure ◽  
Medical Instrument ◽  
Gas Mixtures ◽  
Gas Mixture ◽  
Spectroscopic Techniques

AbstractSeveral applications, such as metal surface nitriding, medical instrument sterilization and chemical analysis, have been developed or improved using a gas mixture as plasmogen gas. Research carried out on these subjects covers the aspect of knowing the processes that take place in plasmas which depend on the densities of the different plasma particles and their energy values. In this paper, the results obtained from the application of spectroscopic techniques for the characterization of surface wave discharges at the atmospheric pressure, generated with more than one gas type, are presented, particularly for the Ar-He, Ar-Ne and Ar-N

scholarly journals Surface Wave Discharges Generated with Ar/He and Ar/N2 Gas Mixtures at Atmospheric Pressure

2009 ◽  
Vol 3 (1) ◽  
pp. 52-57 ◽  
Author(s):  
Jose Munoz ◽  
Jose Antonio Bravo ◽  
Maria Dolores Calzada
Keyword(s):  
Surface Wave ◽  
Atmospheric Pressure ◽  
Gas Mixtures

Characterization of a periodic instability in filamentary surface wave discharge at atmospheric pressure in argon

2012 ◽  
Vol 45 (5) ◽  
pp. 055201 ◽  
Author(s):  
J Hnilica ◽  
V Kudrle ◽  
P Vašina ◽  
J Schäfer ◽  
V Aubrecht
Keyword(s):  
Surface Wave ◽  
Atmospheric Pressure ◽  
Wave Discharge

Spectroscopic Characterization of Two Different Microwave (2.45 GHz) Induced Argon Plasmas at Atmospheric Pressure

2005 ◽  
Vol 59 (4) ◽  
pp. 519-528 ◽  
Author(s):  
M. C. García ◽  
C. Yubero ◽  
M. D. Calzada ◽  
M. P. Martínez-Jiménez
Keyword(s):  
Surface Wave ◽  
High Power ◽  
Atmospheric Pressure ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Spectroscopic Characterization ◽  
Argon Plasmas ◽  
Sustained Discharge

A surface-wave-sustained discharge created by using a surfatron device in a tube open to the atmosphere can be used to maintain a microwave (2.45 GHz) plasma at atmospheric pressure at powers of less than 300 W. The TIA ( Torche à Injection Axiale) is a device also producing a plasma that, moreover, permits us to work at high power (higher than 200 W and up to 1000 W). A study of the departure from the thermodynamic equilibrium existing in the argon plasmas created by both devices has been done by using optical emission spectroscopy techniques in order to characterize them and to evaluate their possible advantages when they are used for applied purposes.

Characterization of Particulates Accompanying Laser Ablation of NaNO3

1997 ◽  
Vol 51 (5) ◽  
pp. 707-717 ◽  
Author(s):  
R. L. Webb ◽  
J. T. Dickinson ◽  
G. J. Exarhos
Keyword(s):  
Laser Ablation ◽  
Chemical Analysis ◽  
Single Crystal ◽  
Electric Charge ◽  
Atmospheric Pressure ◽  
Charged Particles ◽  
High Fluence ◽  
Small Particles ◽  
Many Particles

We present observations of submicrometer- to micrometer-sized particles generated by high-fluence (≥10 J/cm2) 248-nm laser ablation of single-crystal NaNO3 in vacuum and at atmospheric pressure. Small particles (50–200 nm in diameter) are ejected by hydrodynamic sputtering. Larger particles (1–20 μm in diameter) are produced by cavitation and spallation in the melt. Many particles formed in air carry electric charge, with roughly equal numbers of positively and negatively charged particles. The particle composition is consistent with substantial nitrate decomposition. The implications of these observations with respect to laser-based chemical analysis are discussed.

Spectroscopic Characterization of Argon–Nitrogen Surface-Wave Discharges in Dielectric Tubes at Atmospheric Pressure

2015 ◽  
Vol 35 (6) ◽  
pp. 993-1014 ◽  
Author(s):  
J. A. Bravo ◽  
R. Rincón ◽  
J. Muñoz ◽  
A. Sánchez ◽  
M. D. Calzada
Keyword(s):  
Surface Wave ◽  
Atmospheric Pressure ◽  
Spectroscopic Characterization

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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