Thermal Coupling in AlGaN/GaN Power Transistors

Frequenz ◽  
2013 ◽  
Vol 67 (1-2) ◽  
Author(s):  
Frank Schnieder ◽  
Matthias Rudolph
Keyword(s):  
Thermal Model ◽  
Fem Analysis ◽  
Finite Element Method Simulation ◽  
Electrical Network ◽  
Thermal Coupling ◽  
Power Transistor ◽  
Coupling Matrix ◽  
Power Transistors ◽  
The Matrix ◽  
Transistor Model

AbstractThermal coupling in AlGaN/GaN transistors is investigated by means of thermal FEM (finite element method) simulation. The results are combined with electrical network simulation using an electro-thermal model. From the FEM analysis the thermal coupling matrix is established, describing the thermal interaction between the different cells of a power transistor. The matrix allows to extract an equivalent circuit for the thermal coupling in a straightforward way. The electrical transistor model is complemented by thermal ports to connect the cells via the thermal coupling network. The electro-thermal model developed yields information on the distribution of temperature and currents within a powerbar and thus is an important tool in transistor design.

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

A Novel Design of Calibration Equipment for 6-Component Huge Force Sensor and Coupling Modification

2009 ◽  
Vol 626-627 ◽  
pp. 111-116 ◽  
Author(s):  
J. Zhang ◽  
Z.L. Peng ◽  
Y.J. Li ◽  
Min Qian
Keyword(s):  
Input Signal ◽  
Force Sensor ◽  
Electric Signal ◽  
Coupling Matrix ◽  
Static Calibration ◽  
Input Force ◽  
The Matrix ◽  
Force Signal ◽  
The Relationship ◽  
Novel Design

This paper presents the research on calibration for a 6-component huge force sensor. 6-component huge force sensor is used to measure the loading forces Fx, Fy, Fz and moments Mx, My, Mz. Static calibration equipment is studied. In order to express the relationship between input force signal and output electric signal when the sensor is used, a coupling matrix is needed. In this paper, a method for establishing the coupling matrix is developed. The matrix is used to calculate the input signal when sensor works in the simulation application, and the result shows it serves the sensor well.

A GENERAL TECHNIQUE FOR COUPLING TWO ARBITRARY METHODS IN STRESS ANALYSIS

2012 ◽  
Vol 09 (02) ◽  
pp. 1240027 ◽  
Author(s):  
MOHAMMAD RAHIM HEMATIYAN ◽  
AMIR KHOSRAVIFARD ◽  
MEHRDAD MOHAMMADI
Keyword(s):  
Sensitivity Analysis ◽  
Stress Analysis ◽  
Matrix Equation ◽  
Present Method ◽  
Black Box ◽  
Problem Domain ◽  
Coupling Matrix ◽  
Commercial Software ◽  
General Technique ◽  
The Matrix

In this paper, a general technique for coupling two arbitrary methods is presented. The problem domain is decomposed into two sub-domains. Afterwards, a sensitivity analysis at the interface of each sub-domain is carried out. Sensitivity matrices of the two sub-domains are used to find the coupling matrix equation. Unknowns at the interface are then found by solving the equations. The size of the matrix equation is very small in comparison with coefficient matrices of each sub-domain. The present method allows the black box coupling of different methods, even commercial software without having access to the matrices created by the methods.

scholarly journals Investigations on the Use of the Power Transistor Source Inductance to Mitigate the Electromagnetic Emission of Switching Power Circuits

Signals ◽  
2021 ◽  
Vol 2 (3) ◽  
pp. 586-603
Author(s):  
Erica Raviola ◽  
Franco Fiori
Keyword(s):  
Electromagnetic Interference ◽  
Power Efficiency ◽  
Electromagnetic Emission ◽  
Optimization Method ◽  
Power Converter ◽  
Primary Concern ◽  
Power Transistor ◽  
Power Transistors ◽  
Power Switches ◽  
Oscillation Damping

With power designers always demanding for faster power switches, electromagnetic interference has become an issue of primary concern. As known, the commutation of power transistors is the main cause of the electromagnetic noise, which can be worsened by the presence of unwanted oscillations superimposed onto the switching waveforms. This work proposes a solution to mitigate the oscillations caused by the turn-on of a power transistor by exploiting its source inductance plus an external one. In this context, an optimization method is proposed to find the optimal value of the source inductance as a trade-off between oscillation damping and power dissipation. The experimental results performed on a prototyped power converter assess the proposed technique as the spectrum of the conducted emission is attenuated by 20 dB at the oscillation frequency. With respect to traditional solution based on snubbers, the proposed solution results in a similar oscillation damping, but with a 0.5% higher power efficiency.

Sign in / Sign up

Export Citation Format

Share Document