Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film
Keyword(s):
X Ray
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AbstractThe present work reports the fabrication of p-Si/SiO2/TiO2and p-Si/SiO2/TiO2/ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated byI − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal thatI − Vcharacteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. TheI − Vcharacteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2/TiO2interlayer.