scholarly journals Studies on rheological, structural, optical, electrical and surface properties of LiMn2O4 thin films by varied spin rates

2017 ◽  
Vol 35 (3) ◽  
pp. 626-631 ◽  
Author(s):  
T. Balakrishnan ◽  
N. Sankara Subramanian ◽  
A. Kathalingam

AbstractLiMn2O4 thin films prepared by cost-effective spin coating method using optimized coating conditions are reported. Spin rate was varied and spin rate dependent properties were studied. Prepared films were characterized for their structural, morphological and optical properties. X-ray diffraction study of LiMn2O4 thin films confirmed the cubic spinel structure with the preferred orientation along (1 1 1) plane. Optical absorption studies showed band gap energy of 3.02 eV for the grown LiMn2O4 films. FT-IR bands assigned to asymmetric stretching modes of MnO6 group were located around 623 cm-1 and 514 cm-1 for the LiMn2O4 thin films. The weak band observed at 437 cm-1 was attributed to the LiO4 tetrahedra. The films showed high conductivity value 0.79 S/cm indicating the generation of effective network of the film for enhanced charge transport. AFM micrographs of the LiMn2O4 films deposited at 3000 rpm and 3500 rpm showed uniform distribution of fine grains throughout the surface without any dark pits, pinholes and cracks.

2015 ◽  
Vol 1805 ◽  
Author(s):  
Javad R. Gatabi ◽  
Kevin A. Lyon ◽  
Shafiqur Rahman ◽  
Hanu Arava ◽  
Juan S Rojas-Ramirez ◽  
...  

ABSTRACTThe role of ferroelectric LiNbO3 (LNB) in altering the frequency dependence of the capacitance of CaCu3Ti4O12 (CCTO) thin films has been investigated. A cost effective spin coating deposition process was used to integrate the oxide heterostructures onto silicon substrates. This study showed that the frequency stability of the CCTO/LNB structure was much improved when the crystallization conditions and physical dimension of each layer were optimized. To integrate this structure with current silicon technology, heterostructures of CCTO and LNB thin films were fabricated on HF terminated Si using chemical solution deposition. It was found that the order of deposition of the two layers was important for the structural quality of the heterostructures with the CCTO layer followed by the LNB layer being the preferred structure. In addition to improvement of the capacitance variation with frequency, the heterostructures also provide a path to tuning the frequency of operation.


2016 ◽  
Vol 1133 ◽  
pp. 414-418 ◽  
Author(s):  
Nurul Fadzilah Ab Rasid ◽  
Siti Nooraya Mohd Tawil ◽  
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan

Rare earth Gd-doped ZnO thin films were prepared by a simple sol-gel spin coating method in order to search for a new functional diluted magnetic semiconductor for potential application in spintronics. The thin films were deposited onto glass substrates with zinc acetate dehydrate, monoethanolamine and 2-methoxyethanol as a starting material, stabilizer and solvent, respectively. The dopant percentage was increased up to 8%. Optical investigation showed that the crystallinity of the thin films was changing due to the increase of the Gd concentrations and optical band gap energy (Eg) value was estimated to be around 3.12 ~ 3.28 eV using Tauc's model. The crystallite size determined from XRD spectra and the results was found that the value is in the range of 14.42 ~ 21.98 nm.


2020 ◽  
Vol 20 (6) ◽  
pp. 3734-3740
Author(s):  
N. P. Vikas ◽  
Sadiq Mahmood ◽  
S. Pranoy ◽  
Sacheen Kumar ◽  
Ravi Kumar

Organic–Inorganic perovskites are promising materials for an alternative to silicon technology for cost-effective performance of photovoltaic’s (PVs). Lead-based hybrid perovskite has lower stability and high toxicity. The bismuth-based hybrid perovskite, Methyl Ammonium Bismuth Iodide (MABI) could be as an alternative to the lead-based system. In the present work, we present the structural and optical studies on hybrid MABI perovskite thin films synthesized at different temperature. Bandgap analyzed from UV-Vis absorption spectroscopy have shown the formation of MABI complex in thin films prepared from the single step spin coating and dip coating method. Further, the MABI formation confirmed by Raman analysis. Optical and structural properties obtained are comparable to earlier reported theoretical studies. The roughness of highly stable annealed film was analyzed by non-contact tapping mode atomic force microscopy.


2021 ◽  
Vol 16 ◽  
pp. 1-6
Author(s):  
ABDUL ISMAIL ABDUL RANI ◽  
Muhammad Afif Abd Rani ◽  
Samat Iderus ◽  
Mohd Shahril Osman ◽  
Norjannah Yusop ◽  
...  

Polytriarylamine (PTAA) is a promising yet trending organic semiconductor material in which has unique characteristics that are low-cost fabrication, flexible and stable in room condition. The unique characteristic of PTAA thin films have attracted researchers to explore more on its ability as future green technology solutions. In this works, the effect of annealing temperature towards PTAA thin films are focused. PTAA thin films is fabricated by solution processed technique and sintered onto the glass substrate by spin coating method. The spin coating speed are 1000 RPM to 5000 RPM. The PTAA thin films are further annealed for an hour with temperatures of 80 oC, 120 oC and 150 oC. It is shown that grain size of thin films are increasing as the temperature increased based on XRD analysis. As for 1000 to 5000 RPM, the highest grain size obtain are 26.46 nm, 31.34 nm, 37.19 nm, 39.96 nm and 42.72 nm, respectively. Optical characteristic also reveals that band gap energy value is perpendicular to the increasing in temperature obtain from the UV-Vis spectrum. The results strongly show that annealing temperature had significantly affected both structural and optical properties of PTAA thin films.


2012 ◽  
Vol 19 (02) ◽  
pp. 1250018
Author(s):  
V. LAKSHMIPRIYA ◽  
B. NATARAJAN ◽  
N. JEYAKUMARAN ◽  
N. PRITHIVIKUMARAN

ZnO thin films were prepared onto the glass substrates by the sol–gel spin coating method for various Zn concentrations and at different spin rates. The influence of concentration of zinc and spin rate on the structural and optical properties of the ZnO thin films were investigated. It was observed that the zinc concentration and spin rate influence the grain size and morphology of the ZnO thin films. The optical band gap energy was found to increase with decrease of Zn concentration and increase in spin speed. The photoluminescence peaks show green radiation at ~485 nm. It was also observed that the enrichment of zinc and variation in spin speed influence the intensity of luminescence peaks.


Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 955 ◽  
Author(s):  
Yingrui Sui ◽  
Yu Zhang ◽  
Dongyue Jiang ◽  
Wenjie He ◽  
Zhanwu Wang ◽  
...  

Cu2MgxZn1−xSnS4 (0 ≤ x ≤0.6) thin films were prepared by a simple, low-temperature (300 °C) and low-cost sol–gel spin coating method followed by post-annealing at optimum conditions. We optimized the annealing conditions and investigated the effect of Mg content on the crystalline quality, electrical and optical performances of the Cu2MgxZn1−xSnS4 thin films. It was found that the Cu2MgxZn1−xSnS4 film annealed at 580 °C for 60 min contained large grain, less grain boundaries and high carrier concentration. Pure phase kesterite Cu2MgxZn1−xSnS4 (0 ≤ x ≤ 0.6) thin films were obtained by using optimal annealing conditions; notably, the smaller Zn2+ ions in the Cu2ZnSnS4 lattice were replaced by larger Mg2+ ions. With an increase in x from 0 to 0.6, the band gap energy of the films decreased from 1.43 to 1.29 eV. When the ratio of Mg/Mg + Zn is 0.2 (x = 0.2), the grain size of Cu2MgxZn1−xSnS4 reaches a maximum value of 1.5 μm and the surface morphology is smooth and dense. Simultaneously, the electrical performance of Cu2MgxZn1−xSnS4 thin film is optimized at x = 0.2, the carrier concentration reaches a maximum value of 3.29 × 1018 cm−3.


2006 ◽  
Vol 957 ◽  
Author(s):  
Toshiyuki Kawaharamura ◽  
Toshiyuki Kawaharamura ◽  
Hiroyuki Nishinaka ◽  
Shizuo Fujita

ABSTRACTDeposition of Zn1-xMgxO thin films on glass substrates has been investigated by the simple and cost-effective mist CVD technique. A water solution of zinc acetate and magnesium acetate was used as the source of Zn and Mg. The solution was ultrasonically atomized, and the aerosols hence formed were supplied by the N2 carrier gas to the substrates. The band gap energy of ZnMgO was successfully controlled from 3.25 eV (ZnO) to 3.75 eV with the concentration ratio [Mg]/([Zn]+[Mg]) in the solution. The transparency in the visible region was higher than 90% and the surface RMS roughness was 7.5 nm (an example for ZnO) despite the polycrystalline structure; they are satisfactory for the optical applications. A UV photodetctor with interdigital electrode structure on the ZnMgO surface was fabricated, where the photoresponsivity of 2.6 A/W at 350 nm and the lowest detectable power of about 1 μW were obtained. Although these values are satisfactory for the simple UV detection but the existence of deep defects is deteriorating the dynamic response of the detector device.


RSC Advances ◽  
2015 ◽  
Vol 5 (14) ◽  
pp. 10599-10610 ◽  
Author(s):  
Sathish Sugumaran ◽  
Chandar Shekar Bellan ◽  
Dinesh Muthu ◽  
Sengodan Raja ◽  
Dinesh Bheeman ◽  
...  

In this paper, a very simple and cost effective dip coating method to obtain novel hybrid PVA–InZnO transparent thin films and sandwich capacitor structures for future transparent device applications.


2013 ◽  
Vol 678 ◽  
pp. 103-107 ◽  
Author(s):  
Arumugam Ranjitha ◽  
Natarajan Muthukumarasamy ◽  
Santhanam Agilan ◽  
Mariyappan Thambidurai ◽  
Rangasamy Balasundraprabhu ◽  
...  

Nanocrystalline TiO2 thin films were prepared by sol-gel dip coating method. The structural investigations were carried out using x-ray diffraction technique. Anatase TiO2 thin films with tetragonal phase were obtained and the grain size was observed to lie in the range of 21-25 nm. Analysis on the surface topography of prepared films have been carried out using atomic force microscopy (AFM). The band gap energy is calculated from the absorption spectra of TiO2 films and is found to lie in the range 3.3 to 3.7 eV.


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