scholarly journals Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

2018 ◽  
Vol 35 (4) ◽  
pp. 893-902
Author(s):  
D. Pucicki
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electronic Structures ◽  
Electronic Band Structure ◽  
Total Content ◽  
Spatial Separation ◽  
Growth Direction ◽  
Field Vector ◽  
Absorption Efficiency ◽  
Electronic Band

Abstract A theoretical study of electronic structures and optical properties of GaInNAs/GaAs quantum wells has been performed. The inhomogeneous distributions of indium and nitrogen atoms along the growth direction were discussed as the main factors having significant impact on the QWs absorption efficiency. The study was performed by applying the band anticrossing model combined with the envelope function formalism and based on the material parameters which can be found in the literature. Indeed, the electronic band structure of 15 nm thick uniform Ga0.7In0.3N0.02As0.98/GaAs QW was computed together with electronic structures of several types of inhomogeneous QWs, with the same total content of In and N atoms. It was found that presented inhomogeneities lead to significant quantum wells potential modifications and thus to spatial separation of the electrons and holes wave functions. On the other hand, these changes have a significant impact on the absorption coefficient behavior. This influence has been studied on the basis of simulated photoreflectance spectra, which probe the absorption transitions between QW energy subbands. The electronic structure of inhomogeneous QWs under the influence of electric field has also been studied. Two different senses of electric field vector (of p-i-n and n-i-p junctions) have been considered and thus, the improvement of such types of QWs-photodetectors based on inhomogeneous GaInNAs QWs has been proposed.

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

AbstractIdentification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

Electronic and Optical Properties of HgI2

1993 ◽  
Vol 302 ◽  
Author(s):  
Yia-Chung Chang ◽  
Hock-Kee Sim ◽  
R. B. James
Keyword(s):  
Electronic Structures ◽  
Electronic Band Structure ◽  
Scattering Data ◽  
Matrix Elements ◽  
Interband Transitions ◽  
Phonon Modes ◽  
Electronic Band ◽  
Optical Responses ◽  
Tetragonal Form ◽  
Excitonic Effects

ABSTRACTWe present theoretical studies of electronic structures, optical responses, and phonon modes of undoped HgI2 in its red tetragonal form. The electronic band structure is studied via an empirical nonlocal pseudopotential model, including the spin-orbit interaction. The electron and hole effective masses, optical matrix elements for interband transitions, and complex dielectric function are computed. Excitonic effects on the absorption coefficient near the fundamental band gap are included within the effectivemass approximation. The resulting absorption spectra and their polarization dependence are compared with experiment with favorable agreement. The phonon modes of HgI2 are studied with a microscopic model and a good fit to the neutron scattering data is obtained.

Electronic Structures of P-Type Doped CuInS2

1996 ◽  
Vol 426 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshida
Keyword(s):  
Electronic Structures ◽  
Electronic Band Structure ◽  
Spherical Wave ◽  
Material Design ◽  
Electronic Band ◽  
Design Considerations ◽  
Band Structure Calculations ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

AbstractWe have studied the electronic structures of CuIn(S0.875X0.125)2 (X=B, C, N, Si or P) based on the ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We have clarified that the physical characteristics of the p-type doped CuInS2 crystals are mainly determined by a change in the strength of interactions between Cu and S atoms. On the basis of the calculated results, we discussed the material design considerations, such as controlling the strength of resistivity for p-type doped CulnS2 materials and converting the conduction type, from n-type to p-type by a codoping method.

scholarly journals Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

2019 ◽  
Vol 32 (3) ◽  
pp. 035303
Author(s):  
I L Drichko ◽  
I Yu Smirnov ◽  
A V Suslov ◽  
M O Nestoklon ◽  
D Kamburov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Band Structure ◽  
Quantum Wells ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Tilted Magnetic Field

scholarly journals Elastic and optical properties of sillenites: First principle calculations

2020 ◽  
Vol 557 (1) ◽  
pp. 98-104 ◽  
Author(s):  
Husnu Koc ◽  
Selami Palaz ◽  
Sevket Simsek ◽  
Amirullah M. Mamedov ◽  
Ekmel Ozbay
Keyword(s):  
Optical Properties ◽  
Electronic Structures ◽  
Density Functional ◽  
Electronic Band Structure ◽  
First Principle ◽  
Electronic Band ◽  
Functional Theory ◽  
First Principle Calculations ◽  
Optical Functions ◽  
The Density Functional Theory

In the present paper, we have investigated the electronic structure of some sillenites - Bi12MO20 (M = Ti, Ge, and Si) compounds based on the density functional theory. The mechanical and optical properties of Bi12MO20 have also been computed. The second-order elastic constants have been calculated, and the other related quantities have also been estimated in the present work. The band gap trend in Bi12MO20 can be understood from the nature of their electronic structures. The obtained electronic band structure for all Bi12MO20 compounds is semiconductor in nature. Similar to other oxides, there is a pronounced hybridization of electronic states between M-site cations and anions in Bi12MO20. Based on the obtained electronic structures, we further calculate the frequency-dependent dielectric function and other optical functions.

Sign in / Sign up

Export Citation Format

Share Document