scholarly journals Direction control of colloidal quantum dot emission using dielectric metasurfaces

Nanophotonics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 1023-1030
Author(s):  
Yeonsang Park ◽  
Hyochul Kim ◽  
Jeong-Yub Lee ◽  
Woong Ko ◽  
Kideock Bae ◽  
...  

AbstractOwing to the recent developments of dielectric metasurfaces, their applications have been expanding from those pertaining to the thickness shrinkage of passive optical elements, such as lenses, polarizers, and quarter-wave plates, to applications pertaining to their integration with active optical devices, such as vertical-cavity surface-emitting lasers. Even though directional lasing and beam shaping of laser emission have been successfully demonstrated, the integration of metasurfaces with random light sources, such as light-emitting diodes, is limited because of function and efficiency issues attributed to the fact that metasurfaces are basically based on the resonance property of the nanostructure. To control the direction of emission from colloidal quantum dots, we present a dielectric metasurface deflector composed of two asymmetric TiO2 nanoposts. TiO2 deflector arrays were fabricated with a dry etching method that is adaptive to mass production and integrated with a colloidal quantum dot resonant cavity formed by sandwiching two distributed Bragg reflectors. To ensure the deflection ability of the fabricated sample, we measured the photoluminescence and far-field patterns of emission from the resonant cavity. From the obtained results, we demonstrated that the colloidal quantum dot emission transmitted through our deflector arrays was deflected by 18°, and the efficiency of deflection was 71% with respect to the emission from the resonant cavity. This integration of dielectric metasurfaces with a resonant cavity shows the possibility of expanding the application of visible metasurfaces in active devices and may help to develop next-generation active devices with novel functions.

2006 ◽  
Vol 88 (3) ◽  
pp. 031107 ◽  
Author(s):  
Andreas Muller ◽  
Chih-Kang Shih ◽  
Jaemin Ahn ◽  
Dingyuan Lu ◽  
Deepa Gazula ◽  
...  

2010 ◽  
Vol 107 (6) ◽  
pp. 063107
Author(s):  
D. W. Xu ◽  
C. Z. Tong ◽  
S. F. Yoon ◽  
L. J. Zhao ◽  
Y. Ding ◽  
...  

2003 ◽  
pp. 226-263
Author(s):  
Victor M. Ustinov ◽  
Alexey E. Zhukov ◽  
Anton Yu. Egorov ◽  
Nikolai A. Maleev

1998 ◽  
Author(s):  
James A. Lott ◽  
Michael J. Noble ◽  
John P. Loehr ◽  
Nikolai N. Ledentsov ◽  
Victor M. Ustinov ◽  
...  

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Gun Wu Ju ◽  
Byung Hoon Na ◽  
Yong-Hwa Park ◽  
Young Min Song ◽  
Yong Tak Lee

Resonant cavity optoelectronic devices, such as vertical cavity surface emitting lasers (VCSELs), resonant cavity enhanced photodetectors (RCEPDs), and electroabsorption modulators (EAMs), show improved performance over their predecessors by placing the active device structure inside a resonant cavity. The effect of the optical cavity, which allows wavelength selectivity and enhancement of the optical field due to resonance, allows the devices to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. However, the narrow spectral bandwidth significantly reduces operating tolerances, which leads to severe problems in applications such as optical communication, imaging, and biosensing. Recently, in order to overcome such drawbacks and/or to accomplish multiple functionalities, several approaches for broadening the spectral bandwidth in resonant cavity optoelectronic devices have been extensively studied. This paper reviews the recent progress in techniques for wide spectral bandwidth that include a coupled microcavity, asymmetric tandem quantum wells, and high index contrast distributed Bragg-reflectors. This review will describe design guidelines for specific devices together with experimental considerations in practical applications.


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Bryan Kelleher ◽  
Michael Dillane ◽  
Evgeny A. Viktorov

AbstractWe review results on the optical injection of dual state InAs quantum dot-based semiconductor lasers. The two states in question are the so-called ground state and first excited state of the laser. This ability to lase from two different energy states is unique amongst semiconductor lasers and in combination with the high, intrinsic relaxation oscillation damping of the material and the novel, inherent cascade like carrier relaxation process, endows optically injected dual state quantum dot lasers with many unique dynamical properties. Particular attention is paid to fast state switching, antiphase excitability, novel information processing techniques and optothermally induced neuronal phenomena. We compare and contrast some of the physical properties of the system with other optically injected two state devices such as vertical cavity surface emitting lasers and ring lasers. Finally, we offer an outlook on the use of quantum dot material in photonic integrated circuits.


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