Grazing incidence diffraction of cadmium arachidate multilayers at the solid-liquid interface

Author(s):  
Chad E. Miller ◽  
Jaroslaw Majewski ◽  
Thomas Gog ◽  
Tonya L. Kuhl

AbstractUsing complementary X-ray reflectivity (XR) and grazing incidence X-ray diffraction (GIXD), we report structural studies of supported thin-organic layers in contact with water and air. Using a monochromatic synchrotron beam to penetrate 10 mm of liquid, we have characterized buried films composed of 12.5 repeating bilayers of arachidic acid (C

2002 ◽  
Vol 35 (2) ◽  
pp. 163-167 ◽  
Author(s):  
F. Pfeiffer ◽  
U. Mennicke ◽  
T. Salditt

An X-ray diffraction experiment on multilamellar membranes incorporated into an X-ray waveguide structure is reported. In the device, the lipid bilayers are confined to one side by the silicon substrate and to the other side by an evaporated thin metal cap layer. Shining a highly brilliant X-ray beam onto the system, resonantly enhanced, precisely defined and clearly distinguishable standing-wavefield distributions (modes) are excited. The in-plane structure of the acyl chain ordering is then studied by grazing incidence diffraction under simultaneously excited modes. A significant gain in signal-to-noise ratio as well as enhanced spatial resolution can be obtained with such a setup.


2021 ◽  
Author(s):  
Ian Colliard ◽  
Jessica C. Brown ◽  
Dylan B. Fast ◽  
Ashleigh Sockwell ◽  
Amy Hixon ◽  
...  

Crystallization at the solid-liquid interface is difficult to spectroscopically observe and therefore challenging to understand and ultimately control at the molecular level. The Ce70-torroid formulated [CeIV70(OH)36(O)64(SO4)60(H2O)10] 4- , part of a larger emerging family of MIV70- materials (M=Zr, U, Ce), presents such an opportunity. We have elucidated assembly mechanisms by X-ray scattering (small-angle scattering and total scattering) of solutions and solids, as well as crystallizing and identifying fragments of Ce70 by single-crystal X-ray diffraction. Fragments show evidence for templated growth (Ce5, [Ce5(O)3(SO4)12] 10- ) and modular assembly from hexamer (Ce6) building units (Ce13, [Ce13(OH)6(O)12(SO4)14(Η2Ο)14] 6- and Ce62, [Ce62(OH)30(O)58(SO4)58] 14- ). Ce62, an almost complete ring, precipitates instantaneously in the presence of ammonium cations as two torqued arcs that interlock by hydrogen boding through NH4 +, which can also be replaced by other cations, demonstrated with CeIII. Room temperature rapid assembly of both Ce70 and Ce62, respectively, by addition of Li+ and NH4 +, along with ion?exchange and redox behavior, invite exploitation of this emerging material family in environmental and energy applications.


2000 ◽  
Vol 50 (4) ◽  
pp. 487-493 ◽  
Author(s):  
C.-J Yu ◽  
A. G Richter ◽  
J Kmetko ◽  
A Datta ◽  
P Dutta

2013 ◽  
Vol 772 ◽  
pp. 143-147
Author(s):  
Marianna Marciszko ◽  
Andrzej Stanisławczyk ◽  
Andrzej Baczmanski ◽  
Krzysztof Wierzbanowski ◽  
Wilfrid Seiler ◽  
...  

The geometry based on the multireflection grazing incidence X-ray diffraction (called the MGIXD method) can be applied to measure residual stresses. Using this method, it is possible to perform a non-destructive analysis of the heterogeneous stresses for different and well defined volumes below the surface of the sample (range of several mm). As the result the average values of stresses weighted by absorption of X-ray radiation are measured. In this work the stress profile as a function of depth for mechanically polished Ti and Al samples were calculated from MGIXD data using inverse Laplace transform.


1994 ◽  
Vol 375 ◽  
Author(s):  
J. L. Jordan-Sweet ◽  
P. M. Mooney ◽  
G. B. Stephenson

AbstractHigh-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows us to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. We demonstrate the power of these techniques with two examples.


1993 ◽  
Vol 37 ◽  
pp. 189-196 ◽  
Author(s):  
B. L. Ballard ◽  
P. K. Predecki ◽  
D. N. Braski

AbstractIntrinsic stresses as a function of σ, the 1/e penetration depth were measured for a smooth, 1μm thick, fine grained, cylindrical post magnetron sputtered molybdenum film deposited on a vycor glass substrate in the dynamic deposition mode. Using grazing incidence diffraction and the Mo (321) reflection, lattice spacing profiles were determined for τ values from 200-4400 Å. The in-plane intrinsic stresses parallel and perpendicular to the post axis were determined employing the ϕ-integral method and assuming elastic isotropy. The results were related to the surface structure and composition profiles via atomic force microscopy (AFM) and auger electron spectroscopy (AES) respectively.


1986 ◽  
Vol 30 ◽  
pp. 457-464 ◽  
Author(s):  
S. S. Iyengar ◽  
M. W. Santana ◽  
H. Windischmann ◽  
P. Engler

Due to the current high interest in characterizing epitaxially deposited thin films required by the electronics industry as well as the increased attention in elucidating reactions between solid surfaces and the environment (e.g., corrosion), investigators have increased their efforts in developing X-ray procedures for analyzing films and surfaces less than 2 μm thick. For example, an entire session of the 1985 Denver Conference on Applications of X-ray Analysis was devoted to this subject and an excellent review of X-ray diffraction techniques for characterizing thin films was recently published by Segmuller (1). Specific techniques include grazing incidence diffraction (2, 3), double crystal diffraction (3), and the use of the Seemann-Bohlin focusing geometry (4, 5).


1995 ◽  
Vol 379 ◽  
Author(s):  
Dirk Rose ◽  
Ullrich Pietsch

ABSTRACTThe depth profile of the defect structure in strained and partially relaxed Ga0.8In0.2As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm.The strength of the method is demonstrated on a sample series with similar thickness of the Ga0.8In0.2As sublayers, ta, but with varying thickness of the GaAs barrier, tb.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing ta the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements.


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