scholarly journals Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe

2016 ◽  
Vol 17 (4) ◽  
pp. 507-510
Author(s):  
V.M. Katerynchuk ◽  
O.S. Litvin ◽  
Z.R. Kudrynskyi ◽  
Z.D. Kovalyuk ◽  
I.G. Tkachuk ◽  
...  
Keyword(s):  
Spectral Range ◽  
Energy Band ◽  
Dielectric Layer ◽  
Van Der Waals ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Mechanical Contact ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Van Der Waals Surface

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

Cadmium metavanadate mixed oxide nanorods for the chemiresistive detection of methane molecules

2020 ◽  
Vol 44 (29) ◽  
pp. 12473-12485 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
P. R. Reshma ◽  
...  
Keyword(s):  
Thin Film ◽  
Mixed Oxide ◽  
Energy Band ◽  
Gas Sensing ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Band Bending ◽  
Sensing Mechanism ◽  
Oxide Nanorods

An energy band diagram of the V2O5–CdO thin film and illustration of the methane (CH4) gas sensing mechanism with band bending.

MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation

2019 ◽  
Vol 34 (12) ◽  
pp. 125007 ◽  
Author(s):  
B R Borodin ◽  
F A Benimetskiy ◽  
M S Dunaevskiy ◽  
V A Sharov ◽  
A N Smirnov ◽  
...  
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram

Direct extrapolation techniques on the energy band diagram of BiVO4 thin films

2020 ◽  
pp. 412719
Author(s):  
Sharifah Nurain Syed Nasir ◽  
Nurul Aida Mohamed ◽  
Mohamad Azri Tukimon ◽  
Mohamad Firdaus Mohamad Noh ◽  
Nurul Affiqah Arzaee ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Direct Extrapolation

scholarly journals Combined analysis of energy band diagram and equivalent circuit on nanocrystal solid

2016 ◽  
Vol 119 (21) ◽  
pp. 215304 ◽  
Author(s):  
Shinya Kano ◽  
Masato Sasaki ◽  
Minoru Fujii
Keyword(s):  
Equivalent Circuit ◽  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Combined Analysis
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