Polarization effects and energy band diagram in AlGaN/GaN heterostructure

Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

Download Full-text

Energy band diagram and charge distribution in AlGaN/GaN heterostructure studied by classical approach

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331159 ◽

2006 ◽

Author(s):

J. Osvald

Keyword(s):

Charge Distribution ◽

Energy Band ◽

Energy Band Diagram ◽

Classical Approach ◽

Band Diagram ◽

Gan Heterostructure

Download Full-text

To Analyze Energy Band Diagram of N-Tunnel Field Effect Transistors (NTFET)

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/1033/1/012042 ◽

2021 ◽

Vol 1033 ◽

pp. 012042

Author(s):

Rajeev Bhatia ◽

S.S. Gill

Keyword(s):

Energy Band ◽

Field Effect ◽

Field Effect Transistors ◽

Energy Band Diagram ◽

Band Diagram

Download Full-text

Concentration Effect of HF on Energy Band Diagram for n-Si(100)/HF Photoelectrochemical Etching System

Journal of The Electrochemical Society ◽

10.1149/1.1858791 ◽

2005 ◽

Vol 152 (3) ◽

pp. C124 ◽

Cited By ~ 4

Author(s):

Wern-Dare Jehng ◽

Jing-Chie Lin ◽

Sheng-Long Lee

Keyword(s):

Energy Band ◽

Energy Band Diagram ◽

Concentration Effect ◽

Band Diagram ◽

Photoelectrochemical Etching ◽

Etching System

Download Full-text

Energy band diagram of In2O3/ Si heterojunction

Baghdad Science Journal ◽

10.21123/bsj.8.2.581-587 ◽

2011 ◽

Vol 8 (2) ◽

pp. 581-587

Author(s):

Baghdad Science Journal

Keyword(s):

Energy Band ◽

Energy Band Diagram ◽

Band Diagram ◽

X Ray Diffraction ◽

Flash Evaporation ◽

Tunneling Diode ◽

Conductivity Increase ◽

Hall Effect Measurements ◽

Evaporation Technique ◽

P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

Download Full-text