scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

Studies on Lead Sulfide (PbS) Semiconducting Thin Films Deposited from Nanoparticles and Its NLO Application

2014 ◽  
Vol 13 (01) ◽  
pp. 1450001 ◽  
Author(s):  
T. S. Shyju ◽  
S. Anandhi ◽  
R. Sivakumar ◽  
R. Gopalakrishnan
Keyword(s):  
Lead Sulfide ◽  
Raman Shift ◽  
Saturable Absorption ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type ◽  
Semiconducting Thin Films ◽  
Deposited Films

Nanoparticle Lead sulfide was synthesized via simple chemical method and deposited on glass substrates at different substrate temperatures by thermal evaporation technique. The synthesized nanoparticle PbS was analyzed and confirmed by X-ray diffraction (XRD), Scanning electron microscopy SEM with EDX and thermogravimetry. The structural, optical, morphological and electrical properties of the deposited films were studied using XRD, UV-Vis, Raman, SEM with EDX, atomicforce microscopy AFM and Hall Effect measurements. The thickness of the deposited samples was measured using thickness profilometer. The Raman shift in the peak occurs toward lower energy with increasing substrate temperature deposited lead sulfide. The Z-scan study with open aperture was carried out at 532 nm using 5 ns laser pulse on the deposited films which shows that nonlinear absorption arises from saturable absorption process. The deposited PbS film exhibits p-type conductivity in Hall measurement.

scholarly journals Каскадные солнечные элементы на основе наногетероструктур GaP/Si/Ge

2019 ◽  
Vol 45 (6) ◽  
pp. 7
Author(s):  
Л.С. Лунин ◽  
М.Л. Лунина ◽  
А.С. Пащенко ◽  
Д.Л. Алфимова ◽  
Д.А. Арустамян ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Energy Band ◽  
External Quantum Efficiency ◽  
Pulsed Laser ◽  
Energy Band Diagram ◽  
Laser Deposition ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

AbstractGaP/Si/Ge nanoheterostructures have been obtained using the method of pulsed laser deposition, and an energy band diagram of cascade solar cells based on these heterostructures were modeled. GaP and Ge nanolayers grown on Si substrates were studied by Raman spectroscopy and X-ray diffraction. Spectral dependences of the external quantum efficiency response of GaP/Si/Ge nanoheterostructures were determined.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Cadmium metavanadate mixed oxide nanorods for the chemiresistive detection of methane molecules

2020 ◽  
Vol 44 (29) ◽  
pp. 12473-12485 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
P. R. Reshma ◽  
...  
Keyword(s):  
Thin Film ◽  
Mixed Oxide ◽  
Energy Band ◽  
Gas Sensing ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Band Bending ◽  
Sensing Mechanism ◽  
Oxide Nanorods

An energy band diagram of the V2O5–CdO thin film and illustration of the methane (CH4) gas sensing mechanism with band bending.

Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation

2019 ◽  
Vol 34 (12) ◽  
pp. 125007 ◽  
Author(s):  
B R Borodin ◽  
F A Benimetskiy ◽  
M S Dunaevskiy ◽  
V A Sharov ◽  
A N Smirnov ◽  
...  
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram

Direct extrapolation techniques on the energy band diagram of BiVO4 thin films

2020 ◽  
pp. 412719
Author(s):  
Sharifah Nurain Syed Nasir ◽  
Nurul Aida Mohamed ◽  
Mohamad Azri Tukimon ◽  
Mohamad Firdaus Mohamad Noh ◽  
Nurul Affiqah Arzaee ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Direct Extrapolation
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