Oxidation of Pb–2.9 at. % Sn alloys

1988 ◽  
Vol 3 (3) ◽  
pp. 466-470 ◽  
Author(s):  
R. A. Konetzki ◽  
Y. A. Chang
Keyword(s):  
Grain Boundaries ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Inversion Layer ◽  
Depth Profiling ◽  
Low Oxygen ◽  
Pressure Oxidation ◽  
Initial Development ◽  
Oxidation In Air

The oxidation behavior of a Pb-2.9 at.% Sn alloy was studied using Auger electron spectroscopy (AES) combined with sputter depth profiling. Samples were oxidized in air at temperatures less than 90 °C and at low oxygen pressures at room temperature. The oxide formed on the alloy after oxidation in air has an “oxide inversion layer,” where the amount of preferentially oxidized tin increases with depth into the sample, reaches a maximum, and then decreases to its bulk value. Internal oxidation of tin was also observed in this alloy, probably occurring along grain boundaries. Low pressure oxidation studies indicate that grain boundaries play an important role in the initial development of the oxide.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

Oxidation Kinetics of (Pb-In) Single-Phase Alloys

1989 ◽  
Vol 167 ◽  
Author(s):  
M.-X. Zhang ◽  
Y. A. Chang ◽  
V. C. Marcotte
Keyword(s):  
Melting Temperature ◽  
Oxidation Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Single Phase ◽  
Depth Profiling ◽  
Parabolic Kinetics ◽  
Logarithmic Law ◽  
Kinetics Of

AbstractThe solid state oxidation kinetics of Pb-In single-phase alloys were studied using AES (Auger Electron Spectroscopy) combined with sputter depth profiling. Samples containing 3, 30, 64 at% In were oxidized in air from room temperature up to 275 °C. At room temperature, the oxidation behavior for all three alloys was found to obey a direct logarithmic law. As the temperature is increased, the kinetics change from logarithmic to parabolic behavior. The transition between logarithmic and parabolic kinetics occurs between 150 °C and 175 °C for Pb-3 at% In alloy, and below 100 °C for Pb-30 at% In and Pb-64 at% In alloys. Using the solidius temperature as melting temperature of an alloy, the transition temperature for Pb-In alloys was observed to be approximately 70 – 75 % of the melting temperature.

Sidewall-Less Depth Profiling with Auger Electron Spectroscopy

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6483-6486
Author(s):  
Kazuyuki Inoue ◽  
Maki Tokoro ◽  
Noritomo Suzuki ◽  
Ryohji Matsubara ◽  
KenjiNakano
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

1996 ◽  
Vol 428 ◽  
Author(s):  
G. O. Ramseyer ◽  
L. H. Walsh ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
R. C. Lacoe ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Copper Diffusion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Electromigration Lifetime

AbstractPatterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

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