Oxidation Kinetics of (Pb-In) Single-Phase Alloys

1989 ◽  
Vol 167 ◽  
Author(s):  
M.-X. Zhang ◽  
Y. A. Chang ◽  
V. C. Marcotte
Keyword(s):  
Melting Temperature ◽  
Oxidation Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Single Phase ◽  
Depth Profiling ◽  
Parabolic Kinetics ◽  
Logarithmic Law ◽  
Kinetics Of

AbstractThe solid state oxidation kinetics of Pb-In single-phase alloys were studied using AES (Auger Electron Spectroscopy) combined with sputter depth profiling. Samples containing 3, 30, 64 at% In were oxidized in air from room temperature up to 275 °C. At room temperature, the oxidation behavior for all three alloys was found to obey a direct logarithmic law. As the temperature is increased, the kinetics change from logarithmic to parabolic behavior. The transition between logarithmic and parabolic kinetics occurs between 150 °C and 175 °C for Pb-3 at% In alloy, and below 100 °C for Pb-30 at% In and Pb-64 at% In alloys. Using the solidius temperature as melting temperature of an alloy, the transition temperature for Pb-In alloys was observed to be approximately 70 – 75 % of the melting temperature.

Oxidation kinetics of Pb–Sn alloys

1989 ◽  
Vol 4 (6) ◽  
pp. 1421-1426 ◽  
Author(s):  
R. A. Konetzki ◽  
Y. A. Chang ◽  
V. C. Marcotte
Keyword(s):  
Solid State ◽  
Auger Electron Spectroscopy ◽  
Oxidation Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Single Phase ◽  
Depth Profiling ◽  
Eutectic Alloys ◽  
Parabolic Oxidation ◽  
Kinetics Of

The solid state oxidation kinetics of Pb–Sn single-phase (2.5 at. % Sn) and eutectic alloys were studied with Auger Electron Spectroscopy combined with sputter depth profiling. The single-phase samples were oxidized in air in the temperature range 22 °C to 250 °C, while the eutectic samples were oxidized from 22 °C to 175 °C. Both alloys oxidize logarithmically between 22 °C and 90 °C and parabolically at temperatures greater than 120 °C. The activation energies for the parabolic oxidation of the single-phase and eutectic alloys are 69.5 and 67.1 ± 8 kJ/mole, respectively.

Oxidation of (Pb, Sn) and (Pb, In) Alloys

1990 ◽  
Vol 112 (2) ◽  
pp. 175-178 ◽  
Author(s):  
R. A. Konetzki ◽  
M. X. Zhang ◽  
D. A. Sluzewski ◽  
Y. A. Chang
Keyword(s):  
Oxidation Kinetics ◽  
Electron Spectroscopy ◽  
Single Phase ◽  
Inversion Layer ◽  
Bulk Alloy ◽  
Solute Content ◽  
Enhanced Diffusion ◽  
Parabolic Kinetics ◽  
Scanning Auger Microprobe ◽  
Kinetics Of

The oxidation of (Pb,Sn) and (Pb,In) single-phase alloys and the Pb-Sn eutectic was studied using Auger electron spectroscopy (AES) and a scanning Auger microprobe (SAM). The oxidation of the single-phase alloys results in a structure which has been called “an oxide inversion layer”, where the amount of solute in the oxide increases with depth into the oxide layer, reaches a maximum, then decreases to its value in the bulk alloy. The solute content of the oxide is noticeably higher in the region surrounding grain boundaries, due to the enhanced diffusion of the solute. Grain boundary oxidation is also observed in the single-phase alloys. The oxidation kinetics of both the single-phase (Pb,Sn) alloys and the eutectic alloy are logarithmic at 22° C and 90° C, but become parabolic at temperatures greater than 120° C. Pb-3.0 at. percent In alloys follow logarithmic oxidation kinetics up to 150°C and parabolic kinetics between 175°C and 250°C.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

Oxidation of Pb–2.9 at. % Sn alloys

1988 ◽  
Vol 3 (3) ◽  
pp. 466-470 ◽  
Author(s):  
R. A. Konetzki ◽  
Y. A. Chang
Keyword(s):  
Grain Boundaries ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Inversion Layer ◽  
Depth Profiling ◽  
Low Oxygen ◽  
Pressure Oxidation ◽  
Initial Development ◽  
Oxidation In Air

The oxidation behavior of a Pb-2.9 at.% Sn alloy was studied using Auger electron spectroscopy (AES) combined with sputter depth profiling. Samples were oxidized in air at temperatures less than 90 °C and at low oxygen pressures at room temperature. The oxide formed on the alloy after oxidation in air has an “oxide inversion layer,” where the amount of preferentially oxidized tin increases with depth into the sample, reaches a maximum, and then decreases to its bulk value. Internal oxidation of tin was also observed in this alloy, probably occurring along grain boundaries. Low pressure oxidation studies indicate that grain boundaries play an important role in the initial development of the oxide.

Ge/Ag(111): SURFACE ALLOY OF A SEMICONDUCTOR ON A METAL

1999 ◽  
Vol 06 (05) ◽  
pp. 929-934 ◽  
Author(s):  
H. OUGHADDOU ◽  
B. AUFRAY ◽  
J. M. GAY
Keyword(s):  
Phase Separation ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Surface Segregation ◽  
Experimental Studies ◽  
Surface Alloy ◽  
Layer By Layer ◽  
Kinetics Of ◽  
Monolayer Coverage

We present one of the first experimental studies of the formation of an ordered surface alloy of a semiconductor, Ge, and a metal, Ag, with bulk tendency to phase separation. The kinetics of growth at room temperature as well as the surface segregation of Ge have been investigated for the (111) orientation using Auger Electron Spectroscopy (AES) and Low Electron Energy Diffraction (LEED). The growth mode of Ge on Ag(111) is layer-by-layer like up to at least two layers. An unexpected ordered surface alloy forming a [Formula: see text] superstructure is observed during the growth at 1/3 germanium monolayer, followed by a p(7× 7) superstructure at one-monolayer coverage. The surface Ge segregation studied via both dissolution and segregation kinetics shows the particular stability of the ordered [Formula: see text] surface alloy.

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