Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni

1992 ◽  
Vol 7 (6) ◽  
pp. 1350-1355 ◽  
Author(s):  
E. Ma ◽  
L.A. Clevenger ◽  
C.V. Thompson
Keyword(s):  
Thin Film ◽  
Isothermal Calorimetry ◽  
Fixed Number ◽  
Cross Sectional ◽  
Linear Heating ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Transient Period ◽  
Show Evidence ◽  
Amorphous Si

We analyze the formation of VSi2 at the amorphous-vanadium-silicide/amorphous-Si interface by linear-heating and isothermal calorimetry, and cross-sectional transmission electron microscopy. We show evidence that indicates sporadic VSi2 nucleation with a steady-state nucleation rate after a transient period. The results are contrasted with those obtained for Al2Ni nucleating at the polycrystalline-Al/polycrystalline-Ni interface, where the kinetics appears to be controlled by growth of a fixed number of nuclei at quickly consumed preferred nucleation sites.

Transistors with a Profiled Active Layer Made by Hot-Wire Cvd

1998 ◽  
Vol 507 ◽  
Author(s):  
H. Meiling ◽  
A.M. Brockhoff ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Hot Wire ◽  
Semiconductor Interface ◽  
Cross Sectional ◽  
Silicon Matrix ◽  
Bias Stress ◽  
Silicon Devices ◽  
Transmission Electron ◽  
Conducting Research

ABSTRACTIn order to obtain stable thin-film silicon devices we are conducting research on the implementation of hot-wire CVD amorphous and polycrystalline silicon in thin-film transistors, TFFs. We present results on TFTs with a profiled active layer (deposited at ≥9 Å/s), and correlate the electrical properties with the structure of the silicon matrix at the insulator/semiconductor interface, as determined with cross-sectional transmission electron microscopy. Devices prepared with an appropriate H2 dilution of SiH4 show cone-shaped crystalline inclusions. These crystals start at the interface in some cases, and in others exhibit an 80nm incubation layer prior to nucleation. The crystals in the TFTs with the incubation layer are not cone-shaped, but are rounded off. The hot-wire CVD deposited devices exhibit a high fieldeffect mobility up to 1.5 cm2V−1s−l. Also, these devices have superior stability upon continuous gate bias stress, as compared to conventional glow-discharge α-Si:H TFTs. We ascribe this to a combination of enhanced structural order of the silicon and a low hydrogen content.

Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

2002 ◽  
Vol 715 ◽  
Author(s):  
Kee-Chan Park ◽  
Jae-Shin Kim ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Transmission Electron

AbstractResidual ion implantation damage at source/drain junctions of excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). Cross-sectional TEM observation showed that XeCl excimer laser (λ=308 nm) energy decreased considerably at the source/drain junctions of top-gated poly-Si TFT due to laser beam diffraction at the gate electrode edges and that the silicon layer amorphized by ion implantation, was not completely annealed at the juncions. The HR-TEM observation showed severe lattice disorder at the junctions of poly-Si TFT.

A Cross-Sectional TEM Specimen of a Multilayer Thin Film Prepared Using the FIB Technique

2015 ◽  
Vol 771 ◽  
pp. 108-111
Author(s):  
Harini Sosiati ◽  
Satoshi Hata ◽  
Toshiya Doi
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Multilayer Film ◽  
Ion Beam ◽  
Substrate Surface ◽  
Thin Foil ◽  
Advanced Materials ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Stem Image

A focused ion beam (FIB) mill equipped with a microsampling (MS) unit and combined with transmission electron microscopy (TEM)/scanning TEM-energy dispersive x-ray spectroscopy (STEM-EDXS) is a powerful tool for studies of the functional advanced materials. For the studies, the specimen must be prepared as a thin foil which is tranparent to the electron beam. Focused ion beam is very effective method for fabricating TEM specimen of the cross-sectional thin film with the “lift-out” technique using a tungsten (W)-needle probe as a micromanipulator. A multilayer film of MgB2/Ni deposited on a Si (001) substrate prepared by FIB-MS technique is presented. Before FIB fabrication, the surface of the multilayer film was coated with W-film to prevent the surface from bombardment by the ion beam. A bright field (BF)-STEM image of the multilayer film related to two-dimensional (2D) elemental mapping clearly showed the presence of MgB2-and Ni-nanolayers. The measured experimental spacing between Ni-nanolayers was comparable with the actual specimen design, but the thickness of Ni-nanolayer was not. Unexpected nanostructures of the formation of SiO2 film on the substrate surface and holes within the film were observed.

Transmission electron microscopy study of YNi2B2C thin film growth on MgO(001)

2004 ◽  
Vol 19 (5) ◽  
pp. 1413-1416 ◽  
Author(s):  
G.H. Cao ◽  
P. Simon ◽  
W. Skrotzki
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Growth ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Orientation Relationships ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Mgo Substrate

A YNi2B2C thin film deposited on MgO(001) substrate by pulsed laser deposition has been investigated by transmission electron microscopy (TEM). Cross-sectional TEM analyses show that the YNi2B2C film grows in the [001] direction. Y2O3 exists not only as an interlayer at the interface of the YNi2B2C thin film and the MgO substrate but occasionally also in the YNi2B2C thin film near the substrate. The orientation relationships between the YNi2B2C thin film, Y2O3 interlayer, and MgO substrate are determined from electron-diffraction patterns to be MgO(001)[100] ‖ Y2O3(001)[100], YNi2B2C(001)[110] ‖ Y2O3(001)[100] ‖ Y2O3(001)[100, and YNi2B2C(001)[100] ‖ Y2O3(001)[100 1.5‖ Y2O3(001)[100] ‖ Y2O3(001)[100 (the numeral above the “parallel” symbol represents the misorientation (in degrees) between the [100] ‖ Y2O3(001)[100 directions).

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