Cross-sectional transmission electron microscopy of x-ray multilayer thin film structures

1991 ◽  
Vol 19 (4) ◽  
pp. 473-485 ◽  
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Multilayer Thin Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Gaas Substrate ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Transmission electron microscopy study of YNi2B2C thin film growth on MgO(001)

2004 ◽  
Vol 19 (5) ◽  
pp. 1413-1416 ◽  
Author(s):  
G.H. Cao ◽  
P. Simon ◽  
W. Skrotzki
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Growth ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Orientation Relationships ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Mgo Substrate

A YNi2B2C thin film deposited on MgO(001) substrate by pulsed laser deposition has been investigated by transmission electron microscopy (TEM). Cross-sectional TEM analyses show that the YNi2B2C film grows in the [001] direction. Y2O3 exists not only as an interlayer at the interface of the YNi2B2C thin film and the MgO substrate but occasionally also in the YNi2B2C thin film near the substrate. The orientation relationships between the YNi2B2C thin film, Y2O3 interlayer, and MgO substrate are determined from electron-diffraction patterns to be MgO(001)[100] ‖ Y2O3(001)[100], YNi2B2C(001)[110] ‖ Y2O3(001)[100] ‖ Y2O3(001)[100, and YNi2B2C(001)[100] ‖ Y2O3(001)[100 1.5‖ Y2O3(001)[100] ‖ Y2O3(001)[100 (the numeral above the “parallel” symbol represents the misorientation (in degrees) between the [100] ‖ Y2O3(001)[100 directions).

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