Observation of a rapid amorphization reaction

We have observed a rapid amorphization reaction at ambient temperature in the Gd/Co system by employing grazing incidence x-ray scattering. We find that a 135 Å crystalline Gd film is amorphized in less than 30 min by deposition of Co. We postulate that the rapidity of the reaction is due to surface diffusion of Co atoms after deposition to fast diffusion sites such as grain boundaries in the Gd film. Once the interfacial region has been amorphized these fast diffusion paths are sealed off from the surface, rapid diffusion of Co into the Gd crystalline layer is prevented, and the amorphization reaction stops.

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New Structure of CTAB Templated Silica Films as revealed by GISAXS coupled to HRTEM

MRS Proceedings ◽

10.1557/proc-628-cc8.3 ◽

2000 ◽

Vol 628 ◽

Author(s):

Sophie Besson ◽

Catherine Jacquiod ◽

Thierry Gacoin ◽

André Naudon ◽

Christian Ricolleau ◽

...

Keyword(s):

Cetyltrimethylammonium Bromide ◽

Grazing Incidence ◽

Hexagonal Structure ◽

X Ray Diffraction ◽

Electronic Microscopy ◽

Silica Films ◽

X Ray ◽

X Ray Scattering ◽

Hexagonal Arrangement ◽

Spherical Micelles

ABSTRACTA microstructural study on surfactant templated silica films is performed by coupling traditional X-Ray Diffraction (XRD) and Transmission Electronic Microscopy (TEM) to Grazing Incidence Small Angle X-Ray Scattering (GISAXS). By this method it is shown that spin-coating of silicate solutions with cationic surfactant cetyltrimethylammonium bromide (CTAB) as a templating agent provides 3D hexagonal structure (space group P63/mmc) that is no longer compatible with the often described hexagonal arrangement of tubular micelles but rather with an hexagonal arrangement of spherical micelles. The extent of the hexagonal ordering and the texture can be optimized in films by varying the composition of the solution.

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Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

10.26434/chemrxiv.8126633.v1 ◽

2019 ◽

Cited By ~ 2

Author(s):

Jonathan Ogle ◽

Daniel Powell ◽

Eric Amerling ◽

Detlef Matthias Smilgies ◽

Luisa Whittaker-Brooks

Keyword(s):

Thin Film ◽

Thin Films ◽

Structural Design ◽

Grazing Incidence ◽

Crystallite Orientation ◽

Miller Index ◽

X Ray ◽

X Ray Scattering ◽

Orientation Distributions ◽

Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

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Grazing incidence small angle X-ray scattering from nanoparticles: beyond classical analysis approximations

Acta Crystallographica Section A Foundations of Crystallography ◽

10.1107/s0108767305082607 ◽

2005 ◽

Vol 61 (a1) ◽

pp. c411-c411

Author(s):

R. Lazzari ◽

G. Renaud ◽

F. Leroy

Keyword(s):

Small Angle ◽

Grazing Incidence ◽

Classical Analysis ◽

X Ray ◽

X Ray Scattering ◽

Ray Scattering

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Time-Resolved Morphology and Kinetic Studies of Pulsed Laser Deposition-Grown Pt Layers on Sapphire at Different Growth Temperatures by in Situ Grazing Incidence Small-Angle X-ray Scattering

Langmuir ◽

10.1021/acs.langmuir.0c02952 ◽

2021 ◽

Author(s):

Sondes Bauer ◽

Adriana Rodrigues ◽

Lukáš Horák ◽

Berkin Nergis ◽

Xiaowei Jin ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Small Angle ◽

Pulsed Laser ◽

Kinetic Studies ◽

Grazing Incidence ◽

Laser Deposition ◽

Time Resolved ◽

X Ray ◽

X Ray Scattering

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Strain Analysis in Thin La1−xCaxMnO3 Films by Grazing Incidence X-ray Scattering

MRS Proceedings ◽

10.1557/proc-602-195 ◽

1999 ◽

Vol 602 ◽

Author(s):

M. Petit ◽

L. J. Martinez-Miranda ◽

M. Rajeswari ◽

A. Biswas ◽

D. J. Kang ◽

...

Keyword(s):

Film Thickness ◽

Lattice Mismatch ◽

Compressive Strain ◽

Strain Analysis ◽

Grazing Incidence ◽

Relaxation Processes ◽

Near Surface ◽

X Ray ◽

X Ray Scattering ◽

Ray Scattering

AbstractWe have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.

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Evolution of Interfacial Roughness Correlations of Fe Au Films Grown on Mgo(001) Substrates

MRS Proceedings ◽

10.1557/proc-440-359 ◽

1996 ◽

Vol 440 ◽

Author(s):

P. C. Chow ◽

R. Paniago ◽

R. Forrest ◽

S. C. Moss ◽

S. S. P. Parkin ◽

...

Keyword(s):

Thin Films ◽

Diffuse Scattering ◽

Perfect Match ◽

Grazing Incidence ◽

Interface Roughness ◽

Metallic Structures ◽

X Ray ◽

Dimensional Image ◽

X Ray Scattering ◽

Image Plate Detector

AbstractThe growth by sputtering of a series of thin films of Fe/Au on MgO(001) substrates was analyzed using Bragg and diffuse X-ray scattering. The Fe (bcc) layer grows rotated by 45° with respect to the MgO – Au(fcc) (001) epitaxial orientation, resulting in an almost perfect match between the two metallic structures. By collecting the X-ray diffuse scattering under grazing incidence using a 2-dimensional image plate detector, we mapped the reciprocal space of these films. We characterized the correlated interface roughness starting with a buffer of Fe in which only three interfaces are present. The propagation of the roughness was subsequently characterized for Fe/Au multilayers with 40 and 100 bilayers. We observe an enlargement of the surface features as a function of time, evidenced by the longer lateral cutoff length measured for thicker films.

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An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

Powder Diffraction ◽

10.1154/1.1815339 ◽

2004 ◽

Vol 19 (4) ◽

pp. 347-351

Author(s):

J. Xu ◽

X. S. Wu ◽

B. Qian ◽

J. F. Feng ◽

S. S. Jiang ◽

...

Keyword(s):

Low Temperatures ◽

Lattice Strain ◽

Lattice Mismatch ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

X Ray Scattering ◽

Transmission Electron ◽

Large Lattice ◽

Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

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