The stability of the surface of La2CuO4 to reactions with adsorbed n-butyl amine: X-ray photoelectron spectroscopy study

The reaction of n-butyl amine adsorbed on the ternary oxide La2CuO4 has been studied by x-ray photoelectron spectroscopy (XPS), paying special attention to the surface composition. We suggest that n-butyl amine reacting with La2CuO4 reduces CuO to Cu2O. The reaction is confined to the surface because the original composition of the material could be restored after in situ scraping with a stainless steel blade.

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An in situ near-ambient pressure X-ray Photoelectron Spectroscopy study of Mn polarised anodically in a cell with solid oxide electrolyte

Electrochimica Acta ◽

10.1016/j.electacta.2015.05.173 ◽

2015 ◽

Vol 174 ◽

pp. 532-541 ◽

Cited By ~ 11

Author(s):

Benedetto Bozzini ◽

Matteo Amati ◽

Patrizia Bocchetta ◽

Simone Dal Zilio ◽

Axel Knop-Gericke ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Ambient Pressure ◽

Solid Oxide ◽

Spectroscopy Study ◽

Solid Oxide Electrolyte ◽

X Ray ◽

A Cell ◽

Oxide Electrolyte

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Instability of NiMoS2 and CoMoS2 Hydrodesulfurization Catalysts at Ambient Conditions: A Quasi in Situ High-Resolution Transmission Electron Microscopy and X-ray Photoelectron Spectroscopy Study

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.6b06030 ◽

2016 ◽

Vol 120 (34) ◽

pp. 19204-19211 ◽

Cited By ~ 8

Author(s):

G. Marien Bremmer ◽

Lennart van Haandel ◽

Emiel J. M. Hensen ◽

Joost W. M. Frenken ◽

Patricia J. Kooyman

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Photoelectron Spectroscopy ◽

Spectroscopy Study ◽

Ambient Conditions ◽

X Ray ◽

Hydrodesulfurization Catalysts ◽

Transmission Electron

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An in situ near-ambient pressure X-ray photoelectron spectroscopy study of CO 2 reduction at Cu in a SOE cell

Journal of Electroanalytical Chemistry ◽

10.1016/j.jelechem.2017.05.011 ◽

2017 ◽

Vol 799 ◽

pp. 17-25 ◽

Cited By ~ 4

Author(s):

Benedetto Bozzini ◽

Matteo Amati ◽

Claudio Mele ◽

Axel Knop-Gericke ◽

Erik Vesselli

Keyword(s):

Photoelectron Spectroscopy ◽

Ambient Pressure ◽

Spectroscopy Study ◽

X Ray

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Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

MRS Proceedings ◽

10.1557/proc-612-d9.18.1 ◽

2000 ◽

Vol 612 ◽

Cited By ~ 2

Author(s):

J. S. Pan ◽

A. T. S. Wee ◽

C. H. A. Huan ◽

J. W. Chai ◽

J. H. Zhang

Keyword(s):

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Room Temperature ◽

Depth Profiling ◽

Oxide Formation ◽

X Ray ◽

Chemical States ◽

The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

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