Observation and analysis of extended dislocations in an Al–Pd–Mn icosahedral quasicrystal by transmission electron microscopy

1995 ◽  
Vol 10 (11) ◽  
pp. 2742-2748 ◽  
Author(s):  
Jianglin Feng ◽  
Renhui Wang ◽  
Mingxing Dai
Keyword(s):  
Physical Space ◽  
Stacking Fault ◽  
Icosahedral Quasicrystal ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Perfect Dislocation ◽  
Complementary Space ◽  
Convergent Beam ◽  
First Time

Extended dislocations including partial dislocations and a stacking fault in Al70Pd20Mn10 icosahedral quasicrystal have been observed and identified for the first time. The diffraction contrast and defocus convergent-beam electron diffraction experiments show that the dissociation of the extended dislocations is of the form 1/2<1 −2 0 0 −2 1> → 1/4<1 −3 1 −1 −1 1>+ 1/4<1 −1 −1 1 −xs3 1> with a stacking fault between these two partial dislocations. For the partial dislocations, the Burgers vector components in physical space b¶part are along different fivefold axes with a magnitude of 0.17 nm, which is about one seventh of that in complementary space. For the perfect dislocation, the Burgers vector component in physical subspace b¶perf is along a twofold axis with a magnitude of 0.183 nm, which is about an eleventh of that in complementary space.

On the determination of stacking-fault energy from dislocation nodes observed by TEM

1994 ◽  
Vol 52 ◽  
pp. 686-687
Author(s):  
Paulo J. Ferreira
Keyword(s):  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Radius Of Curvature ◽  
Bright Field ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Fundamental Understanding ◽  
Line Direction

A fundamental understanding of the mechanical and physical behaviour of metals requires a knowledge of the stacking-fault energy (SFE). This aspect is important because the possibility of cross-slip and thus plastic deformation is a function of the SFE of the material. Impurities may segregate to the faults and change the SFE, which may affect the mechanical behaviour. For low SFE’s materials, the SFE can be determined rather accurately from transmission electron microscopy evaluation of the radius of curvature of dislocation nodes formed by the attractive interaction of dislocations (Fig. 1).This work is directed towards applying the T.E.M. technique to determine the SFE of a 310S stable austenitic stainless steel. The specimens were observed in a JEOL 4000 microscope operated at an accelerating voltage of 200 kV, and equipped with a double tilt stage. Conventional two beam bright field images were used to determine the Burgers vector and line direction of the partial dislocations.

scholarly journals Stacking Fault Energy of Si Nanocrystals Embedded in SiO2

2011 ◽  
Vol 2011 ◽  
pp. 1-3 ◽  
Author(s):  
Y. Q. Wang ◽  
W. S. Liang ◽  
G. G. Ross
Keyword(s):  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
High Temperature Annealing ◽  
Hrtem Image ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Hrtem Observation ◽  
Si Nanocrystals ◽  
Perfect Dislocation

Si nanocrystals (Si nc) were produced by the implantation of Si+ into a SiO2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) observation has shown that a perfect dislocation (Burgers vector b=(1/2)〈110〉) can dissociate into two Shockley partials (Burgers vector b=(1/6)〈112〉) bounding a strip of stacking faults (SFs). The width of the SFs has been determined from the HRTEM image, and the stacking fault energy for Si nc has been calculated. The stacking fault energy for Si nc is compared with that for bulk Si, and the formation probability of defects in Si nc is also discussed. The results will shed a light on the dissociation of dislocations in nanoparticles.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

scholarly journals Dissociation Behavior of Dislocations in Ice

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 386
Author(s):  
Takeo Hondoh
Keyword(s):  
Basal Plane ◽  
Dislocation Line ◽  
Stacking Faults ◽  
Physical Models ◽  
Time Constants ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Perfect Dislocation ◽  
Low Energies ◽  
Dissociated State

Dislocations in ice behave very differently from those in other materials due to the very low energies of stacking faults in the ice basal plane. As a result, the dislocations dissociate on the basal plane, from a perfect dislocation into two partial dislocations with equilibrium width we ranging from 20 to 500 nm, but what is the timescale to reach this dissociated state? Using physical models, we estimate this timescale by calculating two time-constants: the dissociation-completing time td and the dissociation-beginning time tb. These time constants are calculated for two Burgers vectors as a function of temperature. For perfect dislocations with Burgers vector <c + a>, td is more than one month even at the melting temperature TM, and it exceeds 103 years below −50 ℃, meaning that the dissociation cannot be completed during deformation over laboratory timescales. However, in this case the beginning time tb is less than one second at TM, and it is within several tens of minutes above −50 ℃. These dislocations can glide on non-basal planes until they turn to the dissociated state during deformation, finally resulting in sessile extended dislocations of various widths approaching to the equilibrium value we. In contrast, for perfect dislocations with Burgers vector <a>, td is less than one second above −50 ℃, resulting in glissile extended dislocations with the equilibrium width we on the basal plane. This width is sensitive to the shear stress τ exerted normal to the dislocation line, leading to extension of the intervening stacking fault across the entire crystal grain under commonly accessible stresses. Also, due to the widely dissociated state, dislocations <a> cannot cross-slip to non-basal planes. Such behavior of extended dislocations in ice are notable when compared to those of other materials.

scholarly journals {\bb Z}-module defects in crystals

2017 ◽  
Vol 73 (6) ◽  
pp. 427-437 ◽  
Author(s):  
Abdullah Sirindil ◽  
Marianne Quiquandon ◽  
Denis Gratias
Keyword(s):  
Physical Space ◽  
External Stress ◽  
Unit Cell ◽  
Stress Fields ◽  
Acta Cryst ◽  
Burgers Vector ◽  
3 Dimensional ◽  
Linear Defects ◽  
Partial Dislocations ◽  
Zero Vector

An analysis is presented of the new types of defects that can appear in crystalline structures where the positions of the atoms and the unit cell belong to the same {\bb Z}-module,i.e.are irrational projections of anN> 3-dimensional (N-D) lattice Λ as in the case of quasicrystals. Beyond coherent irrationally oriented twins already discussed in a previous paper [Quiquandonet al.(2016).Acta Cryst.A72, 55–61], new two-dimensional translational defects are expected, the translation vectors of which, being projections of nodes of Λ, have irrational coordinates with respect to the unit-cell reference frame. Partial dislocations, called heremodule dislocations, are the linear defects bounding these translation faults. A specific case arises when the Burgers vectorBis the projection of a non-zero vector of Λ that is perpendicular to the physical space. This new kind of dislocation is called ascalar dislocationsince, because its Burgers vector in physical space is zero, it generates no displacement field and has no interaction with external stress fields and other dislocations.

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 383-386 ◽  
Author(s):  
Mark E. Twigg ◽  
Robert E. Stahlbush ◽  
Peter A. Losee ◽  
Can Hua Li ◽  
I. Bhat ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Dark Field ◽  
Pin Diodes ◽  
Plan View ◽  
Planar Defects ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron

Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electron microscopy (TEM) observations of these diodes indicate that these static planar defects are different in structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiC PiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded by partial dislocations, and that the SFs associated with these partials display both Frank and Shockley character. That is, the Burgers vector of such partial dislocations is 1/12<4-403>. For sessile Frank partial dislocations, glide is severely constrained by the need to inject either atoms or vacancies into the expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentally different from other planar defects found in 4H-SiC.

CBED analysis of extended defects in melt-grown GaSe single crystals

1990 ◽  
Vol 48 (4) ◽  
pp. 494-495
Author(s):  
C. De Blasi ◽  
D. Manno
Keyword(s):  
Single Crystals ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Convergent Beam Electron Diffraction ◽  
Extended Defects ◽  
Burgers Vector ◽  
First Order ◽  
Partial Dislocations ◽  
Kinematical Condition ◽  
Convergent Beam

The study of dislocations and stacking faults in melt grown GaSe single crystals has been carried out by the Convergent Beam Electron Diffraction (CBED) technique.The presence of stacking faults induces distortions in the Kikuchi lines observed in the CBED transmitted disk. According to the kinematical condition of the stacking fault visibility, such lines show modifications when g·R is not integer, The displacement vector R has been determined by the analysis of the visibility and invisibility conditions in the transmitted disk, recorded according to the Tanaka method, The Burgers vector b of dislocations has been determined by the analysis of the modifications induced both in Kikuchi lines and in the First Order Laue Zone (FOLZ) reflections, observed in low camera length CBED patterns. Splitting and unsplitting of the reflections correspond to the visibility and invisibility of the dislocations in the kinematical approximation of diffraction contrast, The condition g·b = 0 is not strictly a sufficient condition for the vanishing of the modifications induced by the dislocation, neverthless it is generally very useful as a criterion for determining the direction of b, Moreover, some reflections g give g·b = ⅓ in the case of partial dislocations. This condition does not produce enough contrast to be detected, so that it is one more for the defect invisibility. The Thompson construction has been used in order to calculate the amplitude of b and to discriminate perfect or partial dislocations.

The role of structural imperfections in the photodimerization of 9-cyanoanthracene

1971 ◽  
Vol 324 (1559) ◽  
pp. 459-468 ◽  
Keyword(s):  
Fluorescence Microscopy ◽  
Excitation Energy ◽  
Slip Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Structural Imperfections ◽  
Active Slip

Crystalline 9-cyanoanthracene undergoes photodimerization to give the trans dimer which is unexpected on the basis of the topochemical preformation theory. The possibility that the reaction occurs at defects is investigated; and the nature of the structural imperfections are described, as are also the types of product nuclei and their modes of growth. Interference-contrast and fluorescence microscopy have been employed for the examination of cleaved and partially dimerized faces of the monomer. It is shown that there is an active slip plane (221), and consideration of feasible dislocation reactions, particularly those involving unit strength dislocations which have a component of the Burgers vector in [100], reveals that, within stacking-fault regions (bounded by partial dislocations), the monomer molecules are in trans registry. It is suggested that molecules in such stacking faults act as traps for the excitation energy, and that reaction occurs at these sites.

New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices

1990 ◽  
Vol 183 ◽  
Author(s):  
Werner Wegscheider ◽  
Karl Eberl ◽  
Gerhard Abstreiter ◽  
Hans Cerva ◽  
Helmut Oppolzer
Keyword(s):  
Activation Barrier ◽  
Relaxation Mechanism ◽  
Layer Growth ◽  
Lattice Imaging ◽  
Strained Layer ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Short Period ◽  
Strained Layer Superlattices ◽  
First Time

AbstractHigh quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers pure Si and 9 monolayers pure Ge have been grown by molecular beam epitaxy at 310°C on Ge(001) substrates. In order to investigate the transition from coherent to incoherent growth in these tensily strained structures a set of samples with varying number of superlattice periods has been studied by transmission electron microscopy. It is found that superlattices as thick as 33 nm at least show perfect and defect-free layer growth whereas for thicker superlattices strain accommodation occurs. For this strained heteroepitaxial system we observed, to our knowledge, for the first time the formation of microtwins as the only relaxation mechanism. High-resolution lattice imaging reveals that the twin lamellae result from successive glide of 90° (a/6)<112> Shockley partial dislocations on adjacent {111} planes from the surface towards the bulk. The activation barrier which has to be overcome in the case of 90° partial dislocations is compared with the energies required for the nucleation of 60° perfect and 30° partial misfit dislocation half-loops.

scholarly journals Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 814
Author(s):  
Fernando Lloret ◽  
David Eon ◽  
Etienne Bustarret ◽  
Daniel Araujo
Keyword(s):  
Methane Concentration ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Molar Ratio ◽  
Dislocation Generation ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Level Versus

The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate <110> Burgers vector dislocations above a critical boron concentration, while the second induces <112> type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation.

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