Novel thin films of titanium dioxide particles synthesized by a sol-gel process

1995 ◽  
Vol 10 (12) ◽  
pp. 3068-3078 ◽  
Author(s):  
V.J. Nagpal ◽  
R.M. Davis ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Sol Gel ◽  
Particle Surface ◽  
Composite Films ◽  
Visible Region ◽  
Silicon Substrates ◽  
Transparent Films ◽  
Sol Gel Process ◽  
Crystalline Films

Novel thin films of ultrafine titanium dioxide particles dispersed in a matrix of hydroxypropylcellulose (HPC) polymer have been made on quartz and silicon substrates. The titanium dioxide particles were made by the hydrolysis and condensation of titanium tetraethoxide (TEOT) in solutions of HPC in a mixture of ethanol and water. HPC controlled the particle size by adsorbing at the particle surface during the growth process and generating repulsive steric forces. The TiO2/HPC composite films were transparent in the visible region and completely blocked ultraviolet radiation at 300 nm. These films were crack-free and uniform in composition and thickness. Transparent films of amorphous TiO2 were made by burning out the HPC at 500 °C. These films were highly uniform and had no macroscopic cracks. X-ray diffraction revealed a transition to the anatase form upon sintering at 600 °C. A film sintered at 700 °C had a porosity of 38%. The crystalline films remained transparent until they densified at 800 °C.

Structural, Optical and Electrical Properties of Titanium Dioxide Thin Films with Different Molarity

2013 ◽  
Vol 667 ◽  
pp. 58-62 ◽  
Author(s):  
S.K.M. Maarof ◽  
Saifollah Abdullah ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electrical Properties ◽  
Sol Gel ◽  
Visible Region ◽  
Optical And Electrical Properties ◽  
A Value ◽  
Sol Gel Process ◽  
Coating Method ◽  
Titanium Dioxide Thin Films

Titanium dioxide, TiO2 is one of the semiconductor materials that can be produced in many ways, such as magnetron sputtering, CVD, and sol-gel process. This paper studied on the production of TiO2 by sol-gel method using titanium tetra (IV) isopropoxide, TTiP. The solution of TiO2 then deposited as a thin films onto glass substrate by spin-coating method. The purpose of this paper is to investigate the effect of molarity on the morphology, optical and electrical properties of the thin films. The effect on the morphology was observed by AFM. The electrical properties then observed by IV characteristic and finally on the optical properties were investigated by UV-Vis. The transmission obtained from UV-Vis showed that TiO2 thin films are decreased around 18% at higher molarity in a visible region. The bandgap also decrease at high molarity. Higher molarity of TiO2 in current-voltage characteristic gave a value of current density for 1.03×10-4 A/m2 and resistivity 1.95×107 Ωm.

Preparation, Characterization and its Photocatalytic Performance of Rare Earth Element Erbium Doped with TiO2 Material

2012 ◽  
Vol 568 ◽  
pp. 380-383
Author(s):  
Song Tian Li ◽  
Guo Xu He ◽  
Wei Ma ◽  
Yan Hua Liu
Keyword(s):  
Titanium Dioxide ◽  
Rare Earth ◽  
Rare Earth Element ◽  
Earth Element ◽  
Photocatalytic Performance ◽  
Sol Gel ◽  
Visible Region ◽  
Erbium Doped ◽  
Sol Gel Process ◽  
Reduce Energy Consumption

In order to expand photoresponse range of TiO2, reduce energy consumption of semiconductor material optical catalytic, certain amount of rare earth element Erbiun was doped during preparation of anatase titanium dioxide to improve the light absorption and photocatalysis efficiency. A series of rare earth element doped TiO2 material were prepared by sol-gel process, and characterized by means of UV-vis diffuse reflectance spectra. UV-vis absorption verified that doping of Er3+ enhanced absorptive capacity of catalyst in visible region. The photocatalytic performance of anatase titanium dioxide and rare earth element Erbiun doped with TiO2 to basic fuchsin were studied.

Preparation of LiTaO3 Nano-Crystalline Films by Sol-Gel Process

2012 ◽  
Vol 531-532 ◽  
pp. 446-449 ◽  
Author(s):  
Jun Gou ◽  
Jun Wang ◽  
Ze Hua Huang ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Detection System ◽  
Sol Gel ◽  
Precursor Solution ◽  
Film Material ◽  
Nano Crystalline ◽  
Sol Gel Process ◽  
Crystalline Films ◽  
P Type

Lithium tantalite (LiTaO3) thin film material shows good feasibility and potential for the application of high-performance detection system. In this paper, sol-gel process of LiTaO3 thin films on p-type (111) silicon substrates was described. Stable precursor solution with a desired viscosity was obtained using lithium acetate (LiAc) and tantalum ethoxide (Ta(OC2H5)5) as starting materials. Heat treatment process was optimized to fabricate LiTaO3 films of high crystallinity. Higher crystalline quality films were obtained when each spin-coating process was followed by an annealing operation. Microstructures and crystallization properties of LiTaO3 thin films were further studied. Nano-crystalline films were obtained after annealing at 700 °C for 5 min. The experimental results indicated that the crystallinity and mean grain size of LiTaO3 thin films were proportional to the film thickness.

Characterization and application of niobium-doped titanium dioxide thin films prepared by sol–gel process

2021 ◽  
Vol 127 (8) ◽  
Author(s):  
Gustavo Henrique M. Gomes ◽  
Magnum A. M. L. de Jesus ◽  
André S. Ferlauto ◽  
Marcelo M. Viana ◽  
Nelcy D. S. Mohallem
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Sol Gel ◽  
Sol Gel Process ◽  
Niobium Doped ◽  
Doped Titanium Dioxide ◽  
Titanium Dioxide Thin Films

Sol-Gel Derived Pyroelectric Barium Strontium Titanate Thin films for Infrared Detector Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
Jian-Gong Cheng ◽  
Jun Tang ◽  
Shao-Ling Guo ◽  
Jun-Hao Chu
Keyword(s):  
Thin Films ◽  
Electrode Materials ◽  
Infrared Detector ◽  
Sol Gel ◽  
Precursor Solution ◽  
Columnar Structure ◽  
Silicon Substrates ◽  
Layer By Layer ◽  
Individual Layer ◽  
Sol Gel Process

AbstractBa0.8Sr0.2TiO3 thin films that are suitable for infrared detector applications have been prepared with a sol-gel process using a highly diluted precursor solution. Columnar structure with grain size close to 200 nm was obtained with layer-by-layer homoepitaxy due to a very small thickness of individual layer. The measured pyroelecrtic coefficient is larger than 3.1×10划4 C/m2K at the temperatures ranging from 10 to 26 °C and reaches the maximum value of 4.1×10划4 C/m2K at 16.8 °C. The infrared detectivity of 4.6×107 cmHz1/2W划1 has been obtained at 19 °C and 10 Hz in the Ba0.8Sr0.2TiO3 films deposited on thick (500 μm) platinum coated silicon substrates. The better infrared response can be expected by the improvement in the thermal isolation of pyroelectric element and the electrode materials.

SCANNING ELECTRON MICROSCOPE AND X-RAY DIFFRACTION STUDIES ON THE LATTICE CONSTANT OF SPIN-COATED Zn1-xMgxO THIN FILMS OF SOL-GEL METHOD

2005 ◽  
Vol 12 (04) ◽  
pp. 605-610 ◽  
Author(s):  
M. RUSOP ◽  
K. UMA ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Thin Films ◽  
Lattice Constant ◽  
Zinc Acetate Dihydrate ◽  
Sol Gel ◽  
Zno Films ◽  
Silicon Substrates ◽  
Acetate Dihydrate ◽  
Glass Substrates ◽  
Sol Gel Process ◽  
Coating Method

ZnO and Zn 1-x Mg x O thin films were prepared on glass and silicon substrates by spin coating method using 2-methoxyethanol solution of zinc acetate dihydrate and magnesium acetate dihydrate stabilized by monoethanolamine. The effects of drying and annealing condition of structural and optical properties of the films were studied. It was found that the samples annealed at 650°C improves the crystallographic orientation of the ZnO films grown by the sol-gel process significantly. Two types of substrates were used to examine the substrate effects of the growth of Zn 1-x Mg x O thin films. In corning glass substrates, the lattice constant decreased by a little with increasing concentration of Mg , whereas in the case of silicon substrates, the lattice constant decreased rapidly with x when compared to the glass substrates. The optical band energy gaps of Zn 1-x Mg x O thin films were slightly increased with increasing concentration of Mg .

Optical and Electrical Properties of Sol-Gel Processed Gd Doped Ferroelectric PLZT Thin Films

2002 ◽  
Vol 718 ◽  
Author(s):  
Reji Thomas ◽  
Shoich Mochizuki ◽  
Toshiyuki Mihara ◽  
Tadashi Ishida
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Visible Region ◽  
Fused Silica ◽  
Electrical Measurements ◽  
Seeding Layer ◽  
Crystalline Films ◽  
Plzt Thin Films

AbstractGadolinium(Gd) doped ferroelectric lead lanthanum zirconate titanate (PLGZT 6/2/65/35) thin films were prepared by sol-gel spin coating technique. Fused silica and platinized silicon were used as substrates. Two-step pre-annealing heat treatment was employed to prepare crack free films. Annealing temperature was optimized though the x-ray diffraction studies to prepare films in single perovskite phase. Effects of Pb concentration and the seeding layer on the crystallization were studied. Optical transmission spectra were recorded and from this, refractive index, extinction coefficient and thickness were calculated for amorphous films on fused silica annealed at 400°C. In addition, the resultant films showed more than 60% transmission in the visible region. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. Ferroelectric properties of crystalline films were studied by plotting the P-E hysteresis loop.

Preparation of highly oriented Pb(Zr0.52Ti0.48)O3 thin films by sol-gel-hydrothermal process

1999 ◽  
Vol 14 (7) ◽  
pp. 2712-2715 ◽  
Author(s):  
Jianming Zeng ◽  
Chenglu Lin ◽  
Jinhua Li ◽  
Kun Li
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hydrothermal Process ◽  
Silicon Substrates ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Low Leakage ◽  
Atomic Force ◽  
Low Leakage Current ◽  
Sol Gel Process

A novel sol-gel-hydrothermal process for preparation of highly oriented thin films of Pb(Zr0.52Ti0.48)O3 is reported. Pb(Zr0.52Ti0.48)O3 thin films with fully (111) orientation were successfully prepared on platinized silicon substrates at low temperature (100–200 °C) by combining a conventional sol-gel process and hydrothermal method, i.e., sol-gel-hydrothermal technique. The x-ray rocking curve for the (111) reflection as measured by a high-resolution four-crystal diffractrometer showed a narrow full width at half-maximum value of 0.20° for the as-prepared films. A dense, pinhole-free, and uniform surface morphology was observed from atomic force microscopy images of the films. The low leakage current density of the prepared films was also found.

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