Changes in Preferred Orientation of Pt Thin Films Deposited by dc Magnetron Sputtering Using Ar/O2 Gas Mixtures

1999 ◽  
Vol 14 (4) ◽  
pp. 1255-1260 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Euijoon Yoon ◽  
Dong-Su Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Mixtures ◽  
Preferred Orientation ◽  
Dc Magnetron Sputtering ◽  
Total Strain Energy ◽  
Preferential Growth ◽  
Si Substrates ◽  
Oxygen Incorporation ◽  
Pt Films

(200)-oriented Pt thin films were deposited on SiO2/Si substrates by dc magnetron sputtering using Ar/O2 gas mixtures. Oxygen incorporation into Pt films changed deposition rate, resistivity, stress, and preferred orientation of the films. Increase in film resistivity and decrease in tensile stress were presumed to be the results of the incorporated oxygen into grain boundaries, while the change of preferred orientation resulted from the oxygen incorporation into the Pt lattice. The preferential growth of (200) planes with less total strain energy from the incorporated oxygen resulted in strong (200) preferred orientation in Pt films.

Stress of Platinum Thin Films Deposited by Dc Magnetron Sputtering Using Argon/Oxygen Gas Mixture

1996 ◽  
Vol 441 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Dong-Su Lee ◽  
Yong Eui Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation ◽  
Oxygen Fraction ◽  
Oxygen Gas ◽  
Pt Films ◽  
Excessive Oxygen

AbstractPt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.

(100) Oriented Platinum thin Films Deposited by Dc Magnetron Sputtering On SiO 2/Si Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
Dong-Yeon Park ◽  
Dong-Su Lee ◽  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Hyun-Jung Woo ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Adhesion Test ◽  
Dc Magnetron Sputtering ◽  
Mixed Gas ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
Pt Films ◽  
Deposition Conditions

AbstractPlatinum(Pt) films were sputter-deposited on Si02/Si substrates under the mixed gas atmosphere of Ar and O2. Under certain deposition conditions, the films were oriented such that the (100) direction is normal to the substrate surface. The formation of the (100) texture was affected by the gas pressure and film thickness. After annealing at 650 °C for 1 hour, (100) oriented Pt films with the resistivity of pure Pt were obtained. The annealed Pt films all passed a tape adhesion test and had no defects such as hillocks or pinholes. The experimental results from this work are presented.

Oxygen incorporation in Al thin films during deposition by dc magnetron sputtering

Vacuum ◽  
1988 ◽  
Vol 38 (11) ◽  
pp. 1015-1017 ◽  
Author(s):  
DN Popov ◽  
TzK Kotlarova ◽  
TzD Uzunov ◽  
VN Gaydarova
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation

CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

2017 ◽  
Vol 5 (6) ◽  
pp. 2844-2851 ◽  
Author(s):  
Binbin Wei ◽  
Hanfeng Liang ◽  
Dongfang Zhang ◽  
Zhengtao Wu ◽  
Zhengbing Qi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Electrode Materials ◽  
Dc Magnetron Sputtering ◽  
Si Substrates

CrN thin films deposited on Si substrates show promising applications as electrode materials for high performance supercapacitors.

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth

1999 ◽  
Vol 14 (3) ◽  
pp. 634-637 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Dong-Su Lee ◽  
Euijoon Yoon ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Surface Energy ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Intensity Ratio ◽  
Strain Energy ◽  
Seed Selection ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Lower Strain ◽  
Pt Films

Highly (200)-oriented Pt films on SiO2/Si substrates were successfully prepared by a combination of a dc magnetron sputtering using Ar/O2 gas mixtures and subsequent controlled annealing. The intensity ratio of (200) to (111) planes (I200/I111) was over 200. The (200)-oriented Pt microcrystallites were less susceptible to amorphization due to their lower strain energy with oxygen incorporation than (111)-oriented ones. The controlled grain growth from the selected (200)-oriented seed microcrystallites during subsequent annealing provided a kinetic pathway where grain growth of the seed microcrystallites was predominant, while suppressing the nucleation of surface energy-driven, (111)-oriented seed microcrystallites and subsequent (111) preferred orientation.

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Growth and humidity-dependent electrical properties of bulk-like MoS2 thin films on Si

RSC Advances ◽  
2015 ◽  
Vol 5 (91) ◽  
pp. 74329-74335 ◽  
Author(s):  
Y. J. Liu ◽  
L. Z. Hao ◽  
W. Gao ◽  
Y. M. Liu ◽  
G. X. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Molybdenum Disulfide ◽  
Room Temperature ◽  
Dc Magnetron Sputtering ◽  
Humidity Sensing ◽  
Si Substrates ◽  
Sensing Characteristics

Bulk-like molybdenum disulfide (MoS2) thin films were deposited on Si substrates using a dc magnetron sputtering technique and n-MoS2/p-Si junctions show excellent humidity sensing characteristics at room temperature.

scholarly journals Understanding the Preferred Crystal Orientation of Sputtered Silver in Ar/N2 Atmosphere: A Microstructure Investigation

2019 ◽  
Vol 2019 ◽  
pp. 1-8 ◽  
Author(s):  
YuHao Hu ◽  
Jiajun Zhu ◽  
Chao Zhang ◽  
Wulin Yang ◽  
Licai Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Crystal Orientation ◽  
Preferred Orientation ◽  
Dc Magnetron Sputtering ◽  
Optimum Range ◽  
Si Substrates ◽  
N2 Atmosphere ◽  
Average Grain Size ◽  
Silver Thin Films

Silver thin films were prepared by direct current (DC) magnetron sputtering technique in Ar/N2 atmosphere with various N2 volumetric ratios on Si substrates. Silver thin films prepared in pure Ar atmosphere show highly (111) preferred orientation. However, as the N2 content increases, Ag (111) preferred orientation evolves into (100) preferred orientation gradually. When N2 content is more than 12.5 vol.%, silver thin films exhibit highly (100) preferred orientation. Moreover, the average grain size decreases with increasing N2 content. Silver thin films with low relative density are prepared at high N2 content, which results in higher resistivity of films. By analyzing the resistivity and microstructures of silver thin films, the optimum range of N2 content to get compact silver thin films is found to be not more than 33.3 vol.%. Finally, the mechanism of N2 addition on microstructure evolution of silver thin films was proposed.

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