(100) Oriented Platinum thin Films Deposited by Dc Magnetron Sputtering On SiO 2/Si Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
Dong-Yeon Park ◽  
Dong-Su Lee ◽  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Hyun-Jung Woo ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Adhesion Test ◽  
Dc Magnetron Sputtering ◽  
Mixed Gas ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
Pt Films ◽  
Deposition Conditions

AbstractPlatinum(Pt) films were sputter-deposited on Si02/Si substrates under the mixed gas atmosphere of Ar and O2. Under certain deposition conditions, the films were oriented such that the (100) direction is normal to the substrate surface. The formation of the (100) texture was affected by the gas pressure and film thickness. After annealing at 650 °C for 1 hour, (100) oriented Pt films with the resistivity of pure Pt were obtained. The annealed Pt films all passed a tape adhesion test and had no defects such as hillocks or pinholes. The experimental results from this work are presented.

Changes in Preferred Orientation of Pt Thin Films Deposited by dc Magnetron Sputtering Using Ar/O2 Gas Mixtures

1999 ◽  
Vol 14 (4) ◽  
pp. 1255-1260 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Euijoon Yoon ◽  
Dong-Su Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Mixtures ◽  
Preferred Orientation ◽  
Dc Magnetron Sputtering ◽  
Total Strain Energy ◽  
Preferential Growth ◽  
Si Substrates ◽  
Oxygen Incorporation ◽  
Pt Films

(200)-oriented Pt thin films were deposited on SiO2/Si substrates by dc magnetron sputtering using Ar/O2 gas mixtures. Oxygen incorporation into Pt films changed deposition rate, resistivity, stress, and preferred orientation of the films. Increase in film resistivity and decrease in tensile stress were presumed to be the results of the incorporated oxygen into grain boundaries, while the change of preferred orientation resulted from the oxygen incorporation into the Pt lattice. The preferential growth of (200) planes with less total strain energy from the incorporated oxygen resulted in strong (200) preferred orientation in Pt films.

Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Tirumala ◽  
S. O. Ryu ◽  
K. B. Lee ◽  
R. Vedula ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Electrode Materials ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Sputter Deposited ◽  
Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

Stress of Platinum Thin Films Deposited by Dc Magnetron Sputtering Using Argon/Oxygen Gas Mixture

1996 ◽  
Vol 441 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Dong-Su Lee ◽  
Yong Eui Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation ◽  
Oxygen Fraction ◽  
Oxygen Gas ◽  
Pt Films ◽  
Excessive Oxygen

AbstractPt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.

Crystal Quality and Orientation of Pulsed Laser Deposited Barium Titanate Thin Films

1998 ◽  
Vol 526 ◽  
Author(s):  
J. Gottmann ◽  
T. Klotzbücher ◽  
B. Vosseler ◽  
E. W. Kreutz
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Oriented Growth ◽  
Axis Orientation ◽  
Film Forming ◽  
Gas Atmosphere ◽  
Krf Excimer Laser

AbstractKrF excimer laser radiation (λ=248 nm, τ=25 ns) is used for pulsed laser deposition of BaTiO3 thin films on Pt/Ti/Si multilayer substrates. The processing gas atmosphere consists of O2 at typical pressures of p=10-3-5·10-1 mbar. The investigations concentrate on the influence of the substrate temperature and the kinetic energy of the film forming particles on the crystalline structure and orientation of the growing films.X-ray diffraction measurements and polarization dependent micro Raman spectroscopy reveal oriented growth of the films with c-axis orientation normal to the substrate surface and [100] texture if the energy of the particles is > 60 eV, while at lower kinetic energies a [110] or [111] texture with partly a-axis orientation is preferred. The ferroelectricity and the dielectric constant of the films, as determined by polarization versus voltage (P-V) and capacitance versus voltage (C-V) impedance measurements, decreases with increasing kinetic energy of the film forming particles. This decrease of the dielectric properties correlates with the change of the preferred orientation and the crystalline quality of the films.

Scanning probe microscopy study of the growth of YBa2Cu3O7 thin films

1995 ◽  
Vol 53 ◽  
pp. 380-381
Author(s):  
M. Grant Norton ◽  
Rand R. Biggers ◽  
E.K. Moser ◽  
T.L. Peterson ◽  
I. Maartense
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Substrate Surface ◽  
Microscopy Study ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Ybco Thin Films ◽  
Nucleation Sites ◽  
Step Flow Growth ◽  
Deposition Conditions

Previous work in our laboratory has demonstrated the use of scanning probe microscopy (SPM) techniques in the study of microstructure development in YBa2Cu3O7 (YBCO) thin films formed by pulsed-laser deposition (PLD) [e.g., Ref. 1]. Under certain deposition conditions a high density of surface outgrowths was observed. These outgrowths have been identified as a-axis-oriented YBCO grains nucleated at the substrate surface which grow in concert with the c-axis-oriented YBCO grains. This growth mechanism differs from that previously suggested for the formation of mixed a-axis-oriented/c-axis-oriented YBCO films. The microstructure of YBCO thin films deposited on vicinal substrates by PLD is very different from that observed for films grown on oriented substrates (even under equivalent deposition conditions). Films grown on vicinal LaA1O3 substrates consisted of elongated granular features oriented along common directions. The shape of these features is the result of step-flow growth where the ledges on the miscut substrates provide aligned and enhanced nucleation sites. Such features have been observed on films grown using several different deposition conditions: only the width of the features changed.

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1361-1367 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Surface ◽  
Relative Dielectric Constant ◽  
Grain Structure ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Dielectric Thin Film ◽  
Si Substrates ◽  
Columnar Grain

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

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