Stress of Platinum Thin Films Deposited by Dc Magnetron Sputtering Using Argon/Oxygen Gas Mixture

1996 ◽  
Vol 441 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Dong-Su Lee ◽  
Yong Eui Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation ◽  
Oxygen Fraction ◽  
Oxygen Gas ◽  
Pt Films ◽  
Excessive Oxygen

AbstractPt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.

Changes in Preferred Orientation of Pt Thin Films Deposited by dc Magnetron Sputtering Using Ar/O2 Gas Mixtures

1999 ◽  
Vol 14 (4) ◽  
pp. 1255-1260 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Euijoon Yoon ◽  
Dong-Su Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Mixtures ◽  
Preferred Orientation ◽  
Dc Magnetron Sputtering ◽  
Total Strain Energy ◽  
Preferential Growth ◽  
Si Substrates ◽  
Oxygen Incorporation ◽  
Pt Films

(200)-oriented Pt thin films were deposited on SiO2/Si substrates by dc magnetron sputtering using Ar/O2 gas mixtures. Oxygen incorporation into Pt films changed deposition rate, resistivity, stress, and preferred orientation of the films. Increase in film resistivity and decrease in tensile stress were presumed to be the results of the incorporated oxygen into grain boundaries, while the change of preferred orientation resulted from the oxygen incorporation into the Pt lattice. The preferential growth of (200) planes with less total strain energy from the incorporated oxygen resulted in strong (200) preferred orientation in Pt films.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

Oxygen incorporation in Al thin films during deposition by dc magnetron sputtering

Vacuum ◽  
1988 ◽  
Vol 38 (11) ◽  
pp. 1015-1017 ◽  
Author(s):  
DN Popov ◽  
TzK Kotlarova ◽  
TzD Uzunov ◽  
VN Gaydarova
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

scholarly journals Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Hoai Phuong Pham ◽  
Thanh Giang Le Thuy ◽  
Quang Trung Tran ◽  
Hoang Hung Nguyen ◽  
Huynh Tran My Hoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Carrier Scattering ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
P Type ◽  
Tin Monoxide

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

A Study of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2013 ◽  
Vol 834-836 ◽  
pp. 79-89
Author(s):  
Xian Ming Yang ◽  
Lin Liu ◽  
Juan Xiu Lin
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Pressure Work ◽  
Atomic Force ◽  
Work Pressure ◽  
Sputtering Power ◽  
Ito Thin Films ◽  
Test Table

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.

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