scholarly journals Structural and electrical properties of strontium barium niobate thin films crystallized by conventional furnace and rapid-thermal annealing process

2001 ◽  
Vol 16 (10) ◽  
pp. 3009-3013 ◽  
Author(s):  
R. G. Mendes ◽  
E. B. Araújo ◽  
J. A. Eiras
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Conventional Furnace ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Different Temperatures

Strontium barium niobate (SBN) thin films were crystallized by conventional electric furnace annealing and by rapid-thermal annealing (RTA) at different temperatures. The average grain size of films was 70 nm and thickness around 500 nm. Using x-ray diffraction, we identified the presence of polycrystalline SBN phase for films annealed from 500 to 700 °C in both cases. Phases such as SrNb2O6 and BaNb2O6 were predominantly crystallized in films annealed at 500 °C, disappearing at higher temperatures. Dielectric and ferroelectric parameters obtained from films crystallized by conventional furnace and RTA presented essentially the same values.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Low Temperature Aqueous Polymeric Precursor Processing of ZnO:Er Using a Glycerol Chelating Agent

2006 ◽  
Vol 957 ◽  
Author(s):  
Uma Choppali ◽  
Brian P Gorman
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Doping Concentration ◽  
Compressive Strain ◽  
Chelating Agent ◽  
X Ray Diffraction ◽  
Er Doping ◽  
Structural And Electrical Properties ◽  
Different Temperatures ◽  
Surface Modified

ABSTRACTErbium doped ZnO (ZnO:Er) is considered to be a suitable candidate for fabrication of the current injection optical devices. Although ZnO: Er thin films have been synthesized previously by pulsed laser deposition, we present low – temperature processed ZnO:Er thin films from polymeric precursors. In this work, we study the effect of variation of Er doping concentration on the structural and electrical properties of the synthesized films. ZnO nanoparticles of varied Er doping concentration, derived from the prepared polymeric solution, has been spin – coated onto surface modified substrates, and annealed at different temperatures. The effect of Er doping concentration on film grain size and strain was analyzed using X-ray diffraction. XRD data reveals that doping of Er ions reduces compressive strain considerably in the films. It is speculated that the presence of larger Er cations in ZnO cause tensile stress, which neutralizes the inherent compressive stress, observed in undoped ZnO, significantly decreasing and hence, making the films stress free. Crystallite size of ZnO:Er thin films, annealed at 600°C, was calculated to be approximately 12 nm using Scherrer's equation. The surface morphology of the thin films was characterized by both SEM and AFM. Electrical resistivity of the films, annealed at 450oC, was calculated to be 290 Ω-m for 5 at wt% and 125 Ω-m for 10 at wt% ZnO:Er films.

ELECTRICAL PROPERTY OF CONVENTIONALLY SINTERED ZnO

2013 ◽  
Vol 22 ◽  
pp. 501-510 ◽  
Author(s):  
S. K. TAK ◽  
M. S. SHEKHWAT ◽  
R. MANGAL
Keyword(s):  
Sintering Temperature ◽  
Hold Time ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Phase Study ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Different Temperatures ◽  
Zno Powder ◽  
Zno Ceramics

ZnO powder was synthesized by solid state reaction method. The synthesized powder was granulated and pressed using uni-axial press for preparing the pallets. The prepared pellets were sintered in conventional furnace at different temperatures (900-1300° C). The phase study was done by powder X-ray diffraction and it was found that the there is no other phase present in the synthesized material but the peak intensity is increasing with temperature. The crystallite size of the synthesized ZnO powder was found to be increase with temperature. The effect of sintering on grain growth is investigated by scanning electron microscopy (SEM). SEM revels that the average grain size is increases with increase in sintering temperature. AC impedance of these samples was decreased markedly with increased sintering temperature. In present work the effect of sintering temperatures and hold time on micro structural and electrical properties of ZnO ceramics is carried out.

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Effects of Rapid Thermal Anneals on Boron Implanted GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
M. H. Herman ◽  
S. E. Buttrill
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Conventional Furnace

ABSTRACTRaman scattering, double-crystal x-ray diffraction, and electron beam electroreflectance have been used to assess the damage produced in undoped (100)-GaAs by boron ion implants and the influence of post-implant anneals. Both conventional furnace and rapid thermal annealing treatments were found to remove much of the lattice strain created by the implants. However, considerable disorder also remains after these anneals.

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers

1997 ◽  
Vol 310 (1-2) ◽  
pp. 115-122 ◽  
Author(s):  
D.H. Tassis ◽  
C.A. Dimitriadis ◽  
S. Boultadakis ◽  
J. Arvanitidis ◽  
S. Ves ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Conventional Furnace

Optical Properties of Growth Phases Formed by Rapid Thermal Annealing of MoSix thin Films on Si (100)

1991 ◽  
Vol 224 ◽  
Author(s):  
G. Srinivas ◽  
R.S. Rastogi ◽  
V.D. Vankar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
Pronounced Increase ◽  
Amorphous Thin Films ◽  
Glancing Angle ◽  
Stress Variations

AbstractAmorphous thin films were deposited by co-sputtering Mo and Si on Si(100) single crystals. Rapid thermal annealing at 700, 800 and 1050°C for 30 sec. resulted in the growth of hexagonal and tetragonal phases of MoSi2 as revealed by glancing angle x-ray diffraction. The optical properties of these films were studied by spectroscopic ellipsometry in the range 1.0 to 5.0 eV. As deposited films showed both metallic and semiconducting features in the <ε1> and <ε2> spectra. As a result of annealing at 700 and 800°C, pronounced increase in <ε1> was obtained. Annealing at 1050°C resulted in decrease of the values of <ε2>. Surface morphology, density changes and stress variations associated with recrystallization and compound formation are proposed to account for these observations. The peaks in <ε2> spectra are found to be interband transitions in the MoSi2 structures. These results are in confirmity with the EELS and UPS studies and theoretically calculated band structure of MoSi2.

Rapid thermal annealing and conventional furnace effect on SrBi2Ta2O9 thin films crystallization

2009 ◽  
Vol 517 (19) ◽  
pp. 5728-5733 ◽  
Author(s):  
Gerardo González-Aguilar ◽  
Isabel M. Miranda Salvado ◽  
M. Elisabete Costa
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Conventional Furnace
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