Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

scholarly journals Effect of Sn Addition on Microstructure and Corrosion Behavior of As-Extruded Mg–5Zn–4Al Alloy

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2069 ◽  
Author(s):  
Jian Ding ◽  
Xin Liu ◽  
Yujiang Wang ◽  
Wei Huang ◽  
Bo Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Corrosion Behavior ◽  
Photoelectron Spectroscopy ◽  
Corrosion Current ◽  
Electrochemical Measurements ◽  
Corrosion Mechanism ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

The effect of Sn addition on the microstructure and corrosion behavior of extruded Mg–5Zn–4Al–xSn (0, 0.5, 1, 2, and 3 wt %) alloys was investigated by optical microscopy (OM), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), electrochemical measurements, and immersion tests. Microstructural results showed that the average grain size decreased to some degree and the amount of precipitates increased with the increasing amount of Sn. The extruded Mg–5Zn–4Al–xSn alloy mainly consisted of α-Mg, Mg32(Al,Zn)49, and Mg2Sn phases as the content of Sn was above 1 wt %. Electrochemical measurements indicated that the extruded Mg–5Zn–4Al–1Sn (ZAT541) alloy presented the best corrosion performances, with corrosion potential (Ecorr) and corrosion current density (Icorr) values of −1.3309 V and 6.707 × 10−6 A·cm−2, respectively. Furthermore, the corrosion mechanism of Sn is discussed in detail.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

The Effect of Individual Layer Thickness on Chemical Ordering of Ni-Based Multilayers

2020 ◽  
Vol 15 (6) ◽  
pp. 714-719
Author(s):  
Chao Zhang ◽  
Lishuai Xie ◽  
Dongdong Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
X Ray Diffraction ◽  
Twin Interface ◽  
Individual Layer ◽  
X Ray ◽  
Chemical Ordering ◽  
Transmission Electron ◽  
Average Grain Size ◽  
And Migration

The microstructural evolution of magnetron sputtered Ni-based multilayers with different individual layer thicknesses h is investigated. The average grain size of multilayers and formation of chemical ordered Ni3Al phase are dependent on h in annealed Ni-based multilayer system which are disclosed by X-ray diffraction and transmission electron microscopy. Transformation of chemical ordering in the annealed multilayers is facilitated by large grains with lower density of grain boundaries when h ≥ 40 nm. On the contrary, when h < 40 nm, the retained disordered FCC Ni(Al) phase in the annealed Ni-based multilayers is attributed to the twin interface. The ordering mechanism can be explained by interface-controlled formation and migration of vacancies.

Microstructures and interdiffusions of Pt/Ti electrodes with respect to annealing in the oxygen ambient

1995 ◽  
Vol 10 (7) ◽  
pp. 1790-1794 ◽  
Author(s):  
Kyu Ho Park ◽  
Cha Yeon Kim ◽  
Young Woo Jeong ◽  
Hyun Ja Kwon ◽  
Kwang Young Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Annealed Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Structures ◽  
Degree Of Oxidation ◽  
Increasing Temperature

The microstructural variation and the interdiffusion of Pt (80 nm)/Ti (70 nm)/SiO2/Si during annealing in O2 were investigated using Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. While the as-deposited and 400 °C annealed samples showed well-defined layer structures without any significant interfacial reaction, the degree of oxidation remarkably increased with increasing temperature above 500 °C. The PtTi alloy phase with Pmma structure (AuCd type) was observed from the 500 °C annealed sample. Drastic interdiffusion occurring above 600 °C changed the Pt/Ti bilayer into a very entangled structure. Some TiO2 phases were exposed to the ambient between Pt hillocks. In addition, a small amount of Pt-silicide was found near the TiOx/SiO2 interface.

scholarly journals Monolithic nanocrystalline Au fabricated by the compaction of nanoscale foam

2005 ◽  
Vol 20 (3) ◽  
pp. 554-557 ◽  
Author(s):  
A.M. Hodge ◽  
J. Biener ◽  
L.L. Hsiung ◽  
Y.M. Wang ◽  
A.V. Hamza ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
Depth Sensing ◽  
Compaction Process ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Hardness Values

We describe a two-step dealloying/compaction process to produce nanocrystalline Au. First, nanocrystalline/nanoporous Au foam was synthesized by electrochemically driven dealloying. The resulting Au foams exhibited porosities of ∼60% with pore sizes of 40 and 100 nm and a typical grain size of <50 nm. Second, the nanoporous foams were fully compacted to produce nanocrystalline monolithic Au. The compacted Au was characterized by transmission electron microscopy and x-ray diffraction and tested by depth-sensing nanoindentation. The compacted nanocrystalline Au exhibited an average grain size of <50 nm and hardness values ranging from 1.4 to 2.0 GPa, which were up to 4.5 times higher than the hardness values obtained from polycrystalline Au.

Rapid Thermal Annealing of Low-Energy P and B Implants in Silicon, Optimized by High Resolution X-Ray Diffraction

1994 ◽  
Vol 342 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Pierre H. Woerlee ◽  
Tom W. Ryan ◽  
P. Alkemade
Keyword(s):  
High Resolution ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Simulation Software ◽  
Low Energy ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Dopant Atoms

ABSTRACTIn this paper, low-energy (45 keV) implantations of phosphorous and boron into silicon were studied. A comparison of doping profiles, secondary defect formation, electrical activation and diode leakage was made between Rapid Thermal Annealing (RTA) and conventional furnace annealing. The samples were analysed by High-Resolution X-Ray Diffraction (HR-XRD), X-TEM, SIMS, spreading resistance (SRP) and sheet resistance measurements.The non-destructive HR-XRD technique combined with the novel simulation software was a very useful tool for the defect characterisation and for the choice of the optimum annealing temperature. Furthermore estimations of electrically active dopant atoms were made with HR-XRD by measurement of the strain. With RTA a substitutional dopant concentration of a factor 2 to 4 higher than with furnace annealing can be obtained, for P and B respectively. Electrical measurements show that not all of the substitutional dopants are electrically active, however. Thus estimates of the electrically active dopant atoms with HR-XRD require further study. Furthermore it appeared that RTA was superior to furnace anneal for lowering sheet resistances, defect removal and dopant profile broadening. However, furnace anneal gave the best results for diode leakage currents. This indicates that RTA processing needs to be further refined or that combined RTA/furnace processes need to be developed.

Microstructure and superconducting properties of Y–Ba–Cu–O and Yb–Ba–Cu–O thin films formed by metalorganic deposition

1989 ◽  
Vol 4 (5) ◽  
pp. 1065-1071 ◽  
Author(s):  
Y. L. Chen ◽  
J. V. Mantese ◽  
A. H. Hamdi ◽  
A. L. Micheli
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Size ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Metalorganic Deposition

Thin films of Y–Ba–Cu–O and Yb–Ba–Cu–O, 0.5–1.5 μm in thickness, were deposited onto (211) and (100) SrTiO3 single crystal substrates by metalorganic deposition (MOD). After deposition the samples were annealed either by conventional furnace annealing or rapid thermal annealing (RTA). The microstructures of these films were then characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive x-ray spectrometry (EDS). Grain size of the annealed films varied from 0.25 to 1.0 μm. Improved superconducting properties were found for the RTA samples, compared to furnace annealing, and were attributed to larger grain size, little strontium diffusion into the thin films from the substrate, and highly preferred orientation of the 1:2:3 phase.

Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

1992 ◽  
Vol 279 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
Chr. Dieker ◽  
H. Dederichs ◽  
L. Vescan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

ABSTRACTSynthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

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