In vacuo Pulsed Laser Ablation of YBa2Cu3O7–x Target for the Formation of Y2O3 Nanostructures

2002 ◽  
Vol 17 (3) ◽  
pp. 697-700 ◽  
Author(s):  
D. B. Jan ◽  
Q. X. Jia ◽  
M. E. Hawley ◽  
G. W. Browne ◽  
C. J. Wetteland ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Three Dimensional ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Growth Surface ◽  
Planar Growth

The formation of superconducting YBa2Cu3O7–x (Y123) by in situ pulsed laser deposition from a stoichiometric Y123 target typically requires an oxygen-ambient environment (P ˜ 100–300-mtorr O2) and appropriate substrate temperature during deposition. We have found that pulsed laser deposition from a Y123 target in vacuo onto a (001) LaAlO3 substrate favors the formation of Y2O3. We observed that the Y2O3 (001) films yield three-dimensional nanoscale morphologies that are markedly different from the planar growth surface of conventional superconducting c-axis Y123 films and Y2O3 films formed from the pulsed laser ablation of a Y2O3 target.

Quantum Confinement of GaAs Nanocrystals Deposited on PMMA Microspheres Using Pulsed Laser Ablation

2013 ◽  
Vol 660 ◽  
pp. 3-9
Author(s):  
Jeong Ho Ryu ◽  
Soon Yong Kweon ◽  
Jung Il Lee ◽  
Sung Lim Ryu
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Quantum Confinement ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Average Diameter ◽  
Laser Deposition ◽  
Spherical Particles ◽  
Novel Approach

A modified pulsed laser deposition (PLD) was employed to deposit GaAs nanocrystals on the surface of PMMA microspheres. This novel approach is distinguished by the fact that laser ablated materials are deposited uniformly onto the surface of spherical particles that are held constantly in a particle fludization unit. The XRD, SEM, EDX, TEM, EDP and PL results confirmed that cubic structured GaAs nanocrystals were deposited uniformly on the surface of PMMA microspheres with an average diameter of about 15 nm.

Ybco Films and Buffer‐Layers Grown In‐Situ by Pulsed Laser Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
G. A. N. Connell ◽  
D. B. Fenner ◽  
D. K. Fork ◽  
J.B. Boyce ◽  
F.A. Ponce ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Ybco Films ◽  
Structural And Electrical Properties

AbstractYSZ [ (Y2O3)x (ZrO2)1‐x ] buffer‐layers for various compositions, x, and YBCO (Y1Ba2Cu3O7‐δ) films were grown on hydrogen‐terminated Si(100) substrates by laser ablation. The structural and electrical properties of the YBCO are found to depend strongly on x, and to be optimized near x=0.1.

In-Situ Optical Diagnostics During Pulsed-Laser Deposition of Magnetoresistive La-Ca-Mn-O Films on Silicon Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
P.-J. Kung ◽  
J. E. Cosgrove ◽  
K. Kinsella ◽  
D. G. Hamblen
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ft Ir

AbstractDuring pulsed-laser deposition of La0.67Ca0.33MnO3 films on silicon substrates, a system that consists of visible optical-emission spectroscopy (OES) and Fourier transform infrared (FT-IR) spectroscopy is employed to perform in-situ diagnosis of the laser-induced plume and to monitor the substrate temperature and the film thickness. The effects of oxygen pressure, laser fluence, and distance from the target surface on emission spectra were studied. In FT-IR measurements, the slopes of the reflectance versus wavenumber curves were observed to increase with film thickness and hence with time, which provides end-point detection during the film growth. La0.67Ca0.33MnO3 films with (100), (110), and mixed orientations, depending on the substrate temperature, were deposited on yttria-stabilized zirconia (YSZ) buffered Si(100) and Si(111) substrates. In a magnetic field of 5 T, the maximum magnetoresistance (MR) values of 250% at 195 K and 164% at 140 K were observed in the as-deposited (110) and (100) films, respectively.

The Preparation of Partially Oriented Zeolite Thin Films via Pulsed Laser Ablation

2002 ◽  
Vol 752 ◽  
Author(s):  
Zhongsheng Deng ◽  
Thomas J. Pisklak ◽  
Kenneth J. Balkus
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Hydrothermal Treatment ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Treatment Results ◽  
Stainless Steel Foil

ABSTRACTThin films of zeolites including silicalite-1, mordenite and UTD-18 have been prepared on stainless steel foil via pulsed laser deposition (PLD). Laser ablation of as-synthesized zeolite targets onto stainless steel foil followed by a post hydrothermal treatment results in partially oriented zeolite thin films. SEM, XRD were used to characterize the zeolite thin films. Preliminary results for multilayercoatings of different zeolites will also be presented.

scholarly journals Langmuir Probe Technique for Plasma Characterization during Pulsed Laser Deposition Process

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 762
Author(s):  
Stefan Andrei Irimiciuc ◽  
Sergii Chertopalov ◽  
Jan Lancok ◽  
Valentin Craciun
Keyword(s):  
Laser Ablation ◽  
Plasma Physics ◽  
Pulsed Laser Deposition ◽  
Real Time ◽  
Langmuir Probe ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Diagnostic Tools ◽  
Full Potential

The history of pulsed laser deposition (PLD) and transient plasmas generated by laser ablation is intertwined with the development of various techniques for its fundamental understanding. Some diagnostic tools have been developed to better suit the rapid transient nature of the plasma (space and time dependence of all parameters, fast decay and complex chemistry inside the plasma), whereas others have been adapted from basic plasma physics studies. Langmuir probe method has been used as a real-time in situ diagnostic tool for laser ablation and later for PLD. It remains a useful tool for the PLD community arsenal, which can easily be adapted to the development of new lasers and ablation regimes and new deposition configuration, being one of the most versatile techniques for plasma diagnostics. It is the cornerstone on which charge particles are analyzed and has led to several important discoveries, such as multiple peak distribution, selective acceleration during expansion, plume splitting, plasma turbulences and fluctuations. However, because the Langmuir probe theory adaptation from classical plasma physics is not straightforward, it might lead to misinterpretation and often incorrect analysis of data. This review analyzes the limits and understanding of the technique as a foundation for attaining its full potential, which can impact the way PLD is used. This is especially useful for the pressing need of real-time, in-situ diagnostics and feedback loops for systematic semi-industrial implementation of the PLD technique.

In situ Growth of Fatigue-free SrBi2Ta2O9 Films by Pulsed Laser Ablation

1997 ◽  
Vol 12 (4) ◽  
pp. 1145-1151 ◽  
Author(s):  
Hung-Ming Yang ◽  
Jian-Shing Luo ◽  
Wen-Tai Lin
Keyword(s):  
Laser Ablation ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Formation Temperature ◽  
In Situ Growth ◽  
Pt Electrode

In situ growth of SrBi2Ta2O9 (SBT) films as a function of Bi concentration in the target, substrate temperature, oxygen pressure, and the thickness of bottom Pt electrode by pulsed laser deposition was studied. The SBT phase initially formed at a temperature of 500–520 °C. The SBT films grown from the stoichiometric target generally showed Bi deficiency. A well-crystallized and stoichiometric SBT film could be grown at a temperature of 550–580 °C in 300 mTorr of O2 from the surplus Bi targets, which showed c-axis preferred orientation. The formation temperature of SrTa4O11 (ST) phase was above 600 °C, depending on the Bi concentration in the target. Higher oxygen pressure raised the formation temperatures of the SBT and ST phases and concomitantly enriched the Bi concentration of the SBT films. For the bottom Pt electrode 1200 Å thick, the voids were not observed in the SBT overlayer until the deposition temperatures were above 590 °C. Annealing at temperatures above 700 °C in an atmosphere of O2 was required to improve the contact between Pt electrode and the SBT film and hence the ferroelectric properties of the SBT film. In the present study, a smooth, stoichiometric, and c-axis oriented SBT film, about 350 nm thick, could be grown on Pt (1200 Å)/Ti/SiO2/Si at a temperature of 550–580 °C in 300 mTorr of O2 from the Bi surplus targets, which showed remnant polarization (Pr) of 3.0–3.5 μC/cm2 and coercive field (Ec) of 30–40 kV/cm at 4 V. No fatigue was observed up to 109. switching cycles

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