Interfacial evolution between Cu and Pb–free Sn–Zn–Ag–Al solders upon aging at 150 °C

2003 ◽  
Vol 18 (8) ◽  
pp. 1795-1803 ◽  
Author(s):  
Shou Chang Cheng ◽  
Kwang Lung Lin

The interfacial intermetallic formation at 150 °C between Cu and various solders, including Sn–9Zn, Sn–8.55Zn–1Ag, and Sn–8.55Zn–1Ag–XAl was investigated. The Al contents X of the quaternary solder alloys investigated were 0.01–0.45 wt.%. The compositions and the growth kinetics of intermetallic compounds (IMCs) were investigated. The IMC consisted of three layers for Sn–9Zn/Cu, Sn–Zn–Ag/Cu, and Sn–Zn–Ag–XAl/Cu specimens after aging for 100–600 h. These three layers included the Cu3(Zn, Sn) phase adjacent to the solder, the Cu6(Sn, Zn)5 phase in the middle, and the Cu–rich phase near to Cu. For long–term aging time over 1000 h, the Cu6(Sn, Zn)5 phase grew, while the Cu3(Zn, Sn) phase diminished. Al segregation formed in the IMC for all of the Sn–Zn–Ag–XAl/Cu specimens after aging.Cracks formed, when aged for 1000 h, at the solder/IMC interface or within the IMC layer for the following solders: Sn–9Zn, Sn–8.55Zn–1Ag, Sn–8.55Zn–1Ag–0.1Al, Sn–8.55Zn–1Ag–0.25Al, and Sn–8.55Zn–1Ag–0.45Al. The crack was not detected up to 3000 h for the Sn–8.55Zn–1Ag–0.01Al/Cu couple, of which the IMC growth rate was the slowest among all solders.

2005 ◽  
Vol 475-479 ◽  
pp. 2627-2630
Author(s):  
Soon Tae Kim ◽  
Joo Youl Huh

The effect of adding Bi to a eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compounds (IMCs) in solder/Cu joints was examined at the aging temperatures of 130°C, 150°C and 180°C. At 150°C and 180°C, the growth rate of the Cu6Sn5 layer was significantly enhanced, but that of the Cu3Sn layer was rather reduced with increasing Bi content up to 12 wt.%. At 130°C, however, both the η and ε layers appeared to grow faster as the Bi content in the solder was increased to 12 wt.%. These results suggest that the accumulation of Bi ahead of the Cu6Sn5 layers can affect not only the interfacial reaction barrier but also the local thermodynamics at the interface between the Cu6Sn5 layer and the solder.


2007 ◽  
Vol 124-126 ◽  
pp. 539-542
Author(s):  
Eui Tae Kim ◽  
Anupam Madhukar

We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast growth rate of 0.22 ML/sec and slow growth rate of 0.054 ML/sec. With increasing InAs deposition amount to 3.0 ML, the QD density was almost constant after 2D to 3D island transition at the slow deposition rate while the QD density kept increasing and the QD size distribution was relatively broad at the fast growth rate. After the 2D to 3D transition, at the slow growth rate, further deposited In adatoms seemed to incorporate primarily into already formed islands, and thus contribute to equalize island size. The photoluminescence (PL) full-width at half maximum (FWHM) of 2.5 ML InAs QDs at 0.054 ML/sec was 23 meV at 78K. The PL characteristics of InAs/GaAs QDs were degraded significantly after thermal annealing at 550 oC for 3 hours.


2014 ◽  
Vol 90 ◽  
pp. 121-126 ◽  
Author(s):  
M. Movahedi ◽  
A.H. Kokabi ◽  
S.M. Seyed Reihani ◽  
H. Najafi ◽  
S.A. Farzadfar ◽  
...  

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