Characteristics of Alumina Diffusion Barrier Films on Hastelloy

2004 ◽  
Vol 19 (4) ◽  
pp. 1175-1180 ◽  
Author(s):  
I. Usov ◽  
P. Arendt ◽  
L. Stan ◽  
DePaula R. ◽  
H. Wang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Diffusion Mechanism ◽  
Barrier Films ◽  
Alumina Films ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Before And After ◽  
Wide Interface ◽  
Secondary Ion

The diffusion behavior of elements constituting Hastelloy C-276 (C, Si, Mn, Co, W, Fe, Cr, Mo, and Ni) in alumina films was investigated using secondary ion mass spectroscopy. The films were deposited by ion-beam-assisted deposition and annealed in vacuum over a temperature range of 500–1000 °C. Characterization of film microstructure was performed using transmission electron microscopy and selected area diffraction analyses. The films were predominantly amorphous with alumina nanocrystallites nonuniformly dispersed throughout the volume both before and after annealing. A relatively wide interface region between the Hastelloy substrate and alumina film was formed in the as-deposited sample due to ion beam mixing. No diffusion of any of the substrate elements was observed after annealing, except for Mn, Cr, and Ni. The impurity depth distributions consisted of two components, which differed by several orders of magnitude with respect to diffusion coefficient and solubility. Activation energies and temperature dependencies of the diffusion coefficients were determined, and a diffusion mechanism was discussed.

Characterization of Ti Alloys Bombarded by keV Deuterium Ions

1992 ◽  
Vol 268 ◽  
Author(s):  
G.P. Chambers ◽  
G. K. Hubler ◽  
J.A. Sprague ◽  
K.S. Grabowski
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ti Alloys ◽  
Transmission Electron ◽  
Before And After ◽  
Current Densities ◽  
Deuterium Gas ◽  
Secondary Ion

ABSTRACTThin Ti films have been bombarded at room temperature with 350–500 eV deuterium ions at current densities up to 0.5 mA/cm2. Analysis using scanning electron microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectroscopy were carried out before and after bombardment. It was determined that deuterium diffuses rapidly throughout the Ti film, that the films were in a state of high compressive stress, and that the TiD2 phase was formed. No evidence of deuterium gas bubbles was found.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

2016 ◽  
Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gate Oxide ◽  
Top Down ◽  
New Techniques ◽  
First Case ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

Characterization of FIB Damage in Silicon

1999 ◽  
Vol 5 (S2) ◽  
pp. 740-741 ◽  
Author(s):  
C.A. Urbanik ◽  
B.I. Prenitzer ◽  
L.A. Gianhuzzi ◽  
S.R. Brown ◽  
T.L. Shofner ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Target Material ◽  
Beam Current ◽  
Specimen Preparation ◽  
Transfer Energy ◽  
Transmission Electron ◽  
Preparation Techniques ◽  
Reactive Gas

Focused ion beam (FIB) instruments are useful for high spatial resolution milling, deposition, and imaging capabilities. As a result, FIB specimen preparation techniques have been widely accepted within the semiconductor community as a means to rapidly prepare high quality, site-specific specimens for transmission electron microscopy (TEM) [1]. In spite of the excellent results that have been observed for both high resolution (HREM) and standard TEM specimen preparation applications, a degree of structural modification is inherent to FIB milled surfaces [2,3]. The magnitude of the damage region that results from Ga+ ion bombardment is dependent on the operating parameters of the FIB (e.g., beam current, beam voltage, milling time, and the use of reactive gas assisted etching).Lattice defects occur as a consequence of FIB milling because the incident ions transfer energy to the atoms of the target material. Momentum transferred from the incident ions to the target atoms can result in the creation of point defects (e.g., vacancies, self interstitials, and interstitial and substitutional ion implantation), the generation of phonons, and plasmon excitation in the case of metal targets.

scholarly journals Nanocrystalline Porous Hydrogen Storage Based on Vanadium and Titanium Nitrides

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
A. Goncharov ◽  
A. Guglya ◽  
A. Kalchenko ◽  
E. Solopikhina ◽  
V. Vlasov ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electrical Resistance ◽  
Ion Beam ◽  
Hydrogen Desorption ◽  
Titanium Nitrides ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Mixed Beam ◽  
20 Nm ◽  
Absorption Characteristics

This review summarizes results of our study of the application of ion-beam assisted deposition (IBAD) technology for creation of nanoporous thin-film structures that can absorb more than 6 wt.% of hydrogen. Data of mathematical modeling are presented highlighting the structure formation and component creation of the films during their deposition at the time of simultaneous bombardment by mixed beam of nitrogen and helium ions with energy of 30 keV. Results of high-resolution transmission electron microscopy revealed that VNxfilms consist of 150–200 nm particles, boundaries of which contain nanopores of 10–15 nm diameters. Particles themselves consist of randomly oriented 10–20 nm nanograins. Grain boundaries also contain nanopores (3–8 nm). Examination of the absorption characteristics of VNx, TiNx, and(V,Ti)Nxfilms showed that the amount of absorbed hydrogen depends very little on the chemical composition of films, but it is determined by the structure pore. The amount of absorbed hydrogen at 0.3 MPa and 20°C is 6-7 wt.%, whereas the bulk of hydrogen is accumulated in the grain boundaries and pores. Films begin to release hydrogen even at 50°C, and it is desorbed completely at the temperature range of 50–250°C. It was found that the electrical resistance of films during the hydrogen desorption increases 104times.

Characterization of Alumina Optical Waveguides Grown by Ion Beam Assisted Deposition for SPARROW Biosensors

2006 ◽  
Vol 967 ◽  
Author(s):  
Praneetha Poloju ◽  
P. K. Samudrala ◽  
J. R. Nightingale ◽  
D. Korakakis ◽  
L. A. Hornak
Keyword(s):  
Optical Waveguides ◽  
Ion Beam ◽  
Biomolecular Detection ◽  
Alumina Films ◽  
Optical Film ◽  
Optical Films ◽  
Beam Parameters ◽  
Coupling Characteristics

ABSTRACTDielectric optical films with minimal surface roughness are required for biosensing applications since the coupling characteristics often used in signal transduction are dependent on the quality of the waveguides. This paper describes the fabrication and characterization of alumina-based optical waveguides for biosensor device for biomolecular detection. Alumina (Aluminum Oxide) Al2O3waveguides were chosen for their moisture stability and refractive index. Planar alumina optical waveguides were deposited on Borofloat substrates by a vacuum evaporation process using an ion assisted electron beam deposition technique. The deposited films showed RMS roughness of 0.3nm – 0.5nm and a range of refractive indices varying from 1.62 to 1.654 as a function of varying ion beam parameters such as oxygen flow rates and drive currents. The propagation losses for the TE0(Transverse Electric) mode of the alumina films at 632.8nm wavelength were found to vary between 2dB/cm – 6dB/cm at a wavelength of 632.8nm for TE0polarization as a function of ion beam parameters. It is shown that these factors influence the optical film quality and hold the potential for achieving further waveguide performance improvement for biosensing applications.

Characterization of magnesium fluoride thin films produced by argon ion beam-assisted deposition

2001 ◽  
Vol 382 (1-2) ◽  
pp. 61-68 ◽  
Author(s):  
L. Dumas ◽  
E. Quesnel ◽  
J.-Y. Robic ◽  
Y. Pauleau
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnesium Fluoride ◽  
Ion Beam Assisted Deposition ◽  
Argon Ion

scholarly journals Fabrication and Characterization of Solid Composite Yarns from Carbon Nanotubes and Poly(dicyclopentadiene)

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 717 ◽  
Author(s):  
Wenbo Xin ◽  
Joseph Severino ◽  
Arie Venkert ◽  
Hang Yu ◽  
Daniel Knorr ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Strengthening Mechanism ◽  
Composite Yarn ◽  
Transmission Electron ◽  
Frictional Forces ◽  
Mechanical Consolidation

In this report, networks of carbon nanotubes (CNTs) are transformed into composite yarns by infusion, mechanical consolidation and polymerization of dicyclopentadiene (DCPD). The microstructures of the CNT yarn and its composite are characterized by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and a focused ion beam used for cross-sectioning. Pristine yarns have tensile strength, modulus and elongation at failure of 0.8 GPa, 14 GPa and 14.0%, respectively. In the composite yarn, these values are significantly enhanced to 1.2 GPa, 68 GPa and 3.4%, respectively. Owing to the consolidation and alignment improvement, its electrical conductivity was increased from 1.0 × 105 S/m (raw yarn) to 5.0 × 105 S/m and 5.3 × 105 S/m for twisted yarn and composite yarn, respectively. The strengthening mechanism is attributed to the binding of the DCPD polymer, which acts as a capstan and increases frictional forces within the nanotube bundles, making it more difficult to pull them apart.

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