Two-step growth of high-quality Nb/(Bi0.5Sb0.5)2Te3/Nb heterostructures for topological Josephson junctions

2018 ◽  
Vol 33 (16) ◽  
pp. 2423-2433 ◽  
Author(s):  
Hui Zhang ◽  
Xiaodong Ma ◽  
Lin Li ◽  
Deler Langenberg ◽  
Chang Gan Zeng ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
High Quality ◽  
Step Growth ◽  
Image Position

Abstract

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2947-2952
Author(s):  
L. Chen ◽  
Z.-H. Lu ◽  
T.-M. Lu ◽  
I. Bhat ◽  
S.B. Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Efficiency ◽  
Electron Backscatter Diffraction ◽  
Low Cost ◽  
High Quality ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Image Position ◽  
Backscatter Diffraction

ABSTRACTEpitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

Fabrication of high-quality Nb/AlOx/Nb Josephson junctions

1990 ◽  
Vol 73 (4) ◽  
pp. 83-96 ◽  
Author(s):  
Hiroyuki Mori ◽  
Mikio Hirano ◽  
Yuji Hatano ◽  
Ushio Kawabe ◽  
Hirojo Yamada ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
High Quality

Low-cost high-quality GaN by one-step growth

2008 ◽  
Vol 310 (5) ◽  
pp. 924-929 ◽  
Author(s):  
J. Tourret ◽  
O. Gourmala ◽  
A. Trassoudaine ◽  
Y. Andre ◽  
E. Gil ◽  
...  
Keyword(s):  
Low Cost ◽  
High Quality ◽  
One Step ◽  
Step Growth

Large-area high-quality single crystal diamond

MRS Bulletin ◽  
2014 ◽  
Vol 39 (6) ◽  
pp. 504-510 ◽  
Author(s):  
Matthias Schreck ◽  
Jes Asmussen ◽  
Shinichi Shikata ◽  
Jean-Charles Arnault ◽  
Naoji Fujimori
Keyword(s):  
Single Crystal ◽  
Large Area ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Single Crystal Diamond ◽  
Image Position

Abstract

The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
Hajine Inuzuka ◽  
Yasutoshi Suzuki ◽  
Naomi Awano ◽  
Kunihiko Hara
Keyword(s):  
Structural Change ◽  
Low Temperature ◽  
Three Dimensional ◽  
Gaas Layer ◽  
High Quality ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Gaas Films ◽  
Step Growth

AbstractThe structural change of the thin low temperature (~450°C) deposited GaAs films and the role for conventional temperature growth were studied by RHEED and cross-sectional TEN observation. The formation of the threedimensional high quality single crystalline islands from continuous twin GaAs layer deposited at low temperature (~450°C) was clarified. These three-dimensional islands act as the seeds for conventional temperature growth.

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