scholarly journals Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

2017 ◽  
Vol 7 (3) ◽  
pp. 691-694 ◽  
Author(s):  
A. Gassenq ◽  
K. Guilloy ◽  
N. Pauc ◽  
D. Rouchon ◽  
J. Widiez ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Image Position ◽  
Highly Strained

Abstract

Time-resolved mid-infrared photoluminescence from highly strained InAs/InGaAs quantum wells grown on InP substrates

2021 ◽  
Vol 14 (3) ◽  
pp. 032008
Author(s):  
Hisashi Sumikura ◽  
Tomonari Sato ◽  
Akihiko Shinya ◽  
Masaya Notomi
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Mid Infrared ◽  
Highly Strained ◽  
Inp Substrates

scholarly journals Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

2015 ◽  
Vol 63 (3) ◽  
pp. 597-603
Author(s):  
Ł. Piskorski ◽  
L. Frasunkiewicz ◽  
R.P. Sarzała
Keyword(s):  
Active Region ◽  
Wavelength Range ◽  
Compressive Strain ◽  
Active Regions ◽  
High Gain ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Laser Sources ◽  
Maximal Gain ◽  
Highly Strained

Abstract In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.

Epitaxy growth and characterization of InAs p-i-n photodetector through ion exchange for mid-infrared detection on Si substrates

2018 ◽  
Vol 8 (03) ◽  
pp. 1085-1091 ◽  
Author(s):  
Wan Khai Loke ◽  
Kian Hua Tan ◽  
Satrio Wicaksono ◽  
Soon Fatt Yoon
Keyword(s):  
Ion Exchange ◽  
Infrared Detection ◽  
Mid Infrared ◽  
Si Substrates ◽  
Image Position

Abstract

Highly-strained InxGa1-xAs1-ySby/GaSb for mid-infrared devices

2014 ◽  
Author(s):  
Charles Meyer ◽  
Justin Grayer ◽  
Dan Paterson ◽  
Emily Cheng ◽  
Gregory Triplett
Keyword(s):  
Mid Infrared ◽  
Highly Strained

scholarly journals Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

2020 ◽  
Vol 35 (16) ◽  
pp. 2098-2105 ◽  
Author(s):  
Aaron M. Katzenmeyer ◽  
Ting S. Luk ◽  
Ezra Bussmann ◽  
Steve Young ◽  
Evan M. Anderson ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Infrared Ellipsometry ◽  
Delta Doping ◽  
Image Position

Abstract

scholarly journals Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

2015 ◽  
Vol 21 (6) ◽  
pp. 1-10 ◽  
Author(s):  
Scott D. Sifferman ◽  
Hari P. Nair ◽  
Rodolfo Salas ◽  
Nathanial T. Sheehan ◽  
Scott J. Maddox ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Type I ◽  
Mid Infrared ◽  
Highly Strained

Simple Identification of Electron Diffraction Ring Patterns

1969 ◽  
Vol 27 ◽  
pp. 160-161
Author(s):  
Carolyn Nohr ◽  
Ann Ayres
Keyword(s):  
Electron Microscope ◽  
Electron Diffraction ◽  
Diffraction Ring ◽  
Image Position

Texts on electron diffraction recommend that the camera constant of the electron microscope be determine d by calibration with a standard crystalline specimen, using the equation

Atomic orientation effects in proton stopping at low velocity

1983 ◽  
Vol 41 ◽  
pp. 708-709
Author(s):  
Kin Lam
Keyword(s):  
Polycrystalline Material ◽  
Charged Particles ◽  
Target Material ◽  
Stopping Power ◽  
Low Velocity ◽  
Electronic Density ◽  
Interatomic Distances ◽  
Frame Work ◽  
Image Position ◽  
Atomic Orientation

The energy of moving ions in solid is dependent on the electronic density as well as the atomic structural properties of the target material. These factors contribute to the observable effects in polycrystalline material using the scanning ion microscope. Here we outline a method to investigate the dependence of low velocity proton stopping on interatomic distances and orientations.The interaction of charged particles with atoms in the frame work of the Fermi gas model was proposed by Lindhard. For a system of atoms, the electronic Lindhard stopping power can be generalized to the formwhere the stopping power function is defined as

A Magnetic Spectrometer for a Scanning Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 436-437
Author(s):  
A. Kosiara ◽  
J. W. Wiggins ◽  
M. Beer
Keyword(s):  
Scanning Transmission Electron Microscope ◽  
Magnetic Spectrometer ◽  
Fringe Field ◽  
Curvature Radius ◽  
Magnetic Pole ◽  
Quadrupole Field ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Under Construction ◽  
Image Position

A magnetic spectrometer to be attached to the Johns Hopkins S. T. E. M. is under construction. Its main purpose will be to investigate electron interactions with biological molecules in the energy range of 40 KeV to 100 KeV. The spectrometer is of the type described by Kerwin and by Crewe Its magnetic pole boundary is given by the equationwhere R is the electron curvature radius. In our case, R = 15 cm. The electron beam will be deflected by an angle of 90°. The distance between the electron source and the pole boundary will be 30 cm. A linear fringe field will be generated by a quadrupole field arrangement. This is accomplished by a grounded mirror plate and a 45° taper of the magnetic pole.

Optimizing conditions for x-ray microchemical analysis in analytical electron microscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 548-549 ◽  
Author(s):  
N. J. Zaluzec
Keyword(s):  
Solid Angle ◽  
Analytical Electron Microscopy ◽  
Incident Beam ◽  
Thin Foil ◽  
Experimental Conditions ◽  
X Ray ◽  
Microchemical Analysis ◽  
Analytical Electron ◽  
Image Position ◽  
Incident Beam Energy

The ultimate sensitivity of microchemical analysis using x-ray emission rests in selecting those experimental conditions which will maximize the measured peak-to-background (P/B) ratio. This paper presents the results of calculations aimed at determining the influence of incident beam energy, detector/specimen geometry and specimen composition on the P/B ratio for ideally thin samples (i.e., the effects of scattering and absorption are considered negligible). As such it is assumed that the complications resulting from system peaks, bremsstrahlung fluorescence, electron tails and specimen contamination have been eliminated and that one needs only to consider the physics of the generation/emission process.The number of characteristic x-ray photons (Ip) emitted from a thin foil of thickness dt into the solid angle dΩ is given by the well-known equation

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