Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates

ABSTRACTAmorphous silicon carbide (a-SiC) thin films have been grown on aluminum nitride (AlN) intermediate layers on (100) Si substrates by RF magnetron sputtering technique. Profilometry, four-point probe method, Rutherford backscattering spectroscopy (RBS) and Fourier transform infrared (FTIR) were employed to characterize the as-deposited SiC thin films. Test structures have been developed to investigate the piezoresistive properties. These structures consist of SiC thin-film resistors on AlN/Si substrates defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. Gauge factor (GF) and temperature coefficient of resistance (TCR) measurements have been performed and demonstrated the potential of these resistors to be used as sensing elements in devices for high temperature application.

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Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.431 ◽

2013 ◽

Vol 740-742 ◽

pp. 431-434 ◽

Cited By ~ 2

Author(s):

Mariana A. Fraga ◽

Leandro L. Koberstein

Keyword(s):

Thin Film ◽

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

The Other ◽

Gauge Factor ◽

Temperature Coefficient Of Resistance ◽

Si Substrates ◽

Thin Film Resistors ◽

Lift Off

The effects of carbon content on the piezoresistive properties of non-stoichiometric silicon carbide (SixCy) films deposited on thermally oxidized (100) Si substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) from silane (SiH4) and methane (CH4) gas mixtures have been investigated. Four different film compositions have been obtained by varying SiH4 flow ratios from 1.0 to 4.0 sccm, while the other parameters were kept constant. In order to evaluate the piezoresistive properties of the SixCy films, we have developed test structures consisting of SixCy thin-film resistors defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. The gauge factor (GF) and temperature coefficient of resistance (TCR) of each SixCy film were measured.

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Structural relaxation of amorphous silicon carbide thin films in thermal annealing

Thin Solid Films ◽

10.1016/j.tsf.2007.06.194 ◽

2008 ◽

Vol 516 (12) ◽

pp. 3855-3861 ◽

Cited By ~ 12

Author(s):

Kun Xue ◽

Li-Sha Niu ◽

Hui-Ji Shi ◽

Jiwen Liu

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Thermal Annealing ◽

Structural Relaxation ◽

Amorphous Silicon Carbide

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Silicon content influence on structure and photoluminescence properties of carbon rich hydrogenated amorphous silicon carbide thin films

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.04.226 ◽

2018 ◽

Vol 753 ◽

pp. 320-328 ◽

Cited By ~ 12

Author(s):

Mingming Li ◽

Lihua Jiang ◽

Yihua Sun ◽

Ting Xiao ◽

Peng Xiang ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Silicon Content ◽

Hydrogenated Amorphous Silicon ◽

Photoluminescence Properties ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique

Applied Surface Science ◽

10.1016/j.apsusc.2012.12.176 ◽

2013 ◽

Vol 270 ◽

pp. 287-291 ◽

Cited By ~ 11

Author(s):

S.X. Li ◽

Y.Q. Cao ◽

J. Xu ◽

Y.J. Rui ◽

W. Li ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Layer By Layer ◽

Hydrogen Annealing ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

Thin Solid Films ◽

10.1016/j.tsf.2012.08.046 ◽

2012 ◽

Vol 522 ◽

pp. 136-144 ◽

Cited By ~ 6

Author(s):

Jérémy Barbé ◽

Ling Xie ◽

Klaus Leifer ◽

Pascal Faucherand ◽

Christine Morin ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Silicon Nanocrystals ◽

Film Properties ◽

Amorphous Silicon Carbide ◽

Carbide Alloy

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RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

Ceramics International ◽

10.1016/j.ceramint.2014.02.067 ◽

2014 ◽

Vol 40 (7) ◽

pp. 9791-9797 ◽

Cited By ~ 19

Author(s):

Enlong Chen ◽

Guoping Du ◽

Yu Zhang ◽

Xiaomei Qin ◽

Hongmei Lai ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Optical Properties ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Effect of deposition temperature on the properties of amorphous silicon carbide thin films

Thin Solid Films ◽

10.1016/j.tsf.2005.12.231 ◽

2006 ◽

Vol 515 (2) ◽

pp. 651-653 ◽

Cited By ~ 8

Author(s):

J. Huran ◽

I. Hotový ◽

J. Pezoltd ◽

N.I. Balalykin ◽

A.P. Kobzev

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Deposition Temperature ◽

Amorphous Silicon Carbide

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Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽

10.1039/c4ra08343a ◽

2014 ◽

Vol 4 (97) ◽

pp. 54388-54397 ◽

Cited By ~ 5

Author(s):

R. K. Tripathi ◽

O. S. Panwar ◽

A. K. Kesarwani ◽

Ishpal Rawal ◽

B. P. Singh ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Vacuum Arc ◽

Amorphous Silicon Carbide ◽

Silicon Target ◽

Filtered Cathodic Vacuum Arc ◽

Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

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