Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films

2013 ◽  
Vol 740-742 ◽  
pp. 431-434 ◽  
Author(s):  
Mariana A. Fraga ◽  
Leandro L. Koberstein

The effects of carbon content on the piezoresistive properties of non-stoichiometric silicon carbide (SixCy) films deposited on thermally oxidized (100) Si substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) from silane (SiH4) and methane (CH4) gas mixtures have been investigated. Four different film compositions have been obtained by varying SiH4 flow ratios from 1.0 to 4.0 sccm, while the other parameters were kept constant. In order to evaluate the piezoresistive properties of the SixCy films, we have developed test structures consisting of SixCy thin-film resistors defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. The gauge factor (GF) and temperature coefficient of resistance (TCR) of each SixCy film were measured.

2012 ◽  
Vol 1433 ◽  
Author(s):  
Mariana A. Fraga ◽  
Humber Furlan ◽  
Rodrigo S. Pessoa ◽  
Luiz A. Rasia

ABSTRACTAmorphous silicon carbide (a-SiC) thin films have been grown on aluminum nitride (AlN) intermediate layers on (100) Si substrates by RF magnetron sputtering technique. Profilometry, four-point probe method, Rutherford backscattering spectroscopy (RBS) and Fourier transform infrared (FTIR) were employed to characterize the as-deposited SiC thin films. Test structures have been developed to investigate the piezoresistive properties. These structures consist of SiC thin-film resistors on AlN/Si substrates defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. Gauge factor (GF) and temperature coefficient of resistance (TCR) measurements have been performed and demonstrated the potential of these resistors to be used as sensing elements in devices for high temperature application.


2021 ◽  
Vol 14 ◽  
Author(s):  
Gabriela Leal ◽  
Humber Furlan ◽  
Marcos Massi ◽  
Mariana Amorim Fraga

Background: Miniaturized piezoresistive sensors, particularly strain gauges, pressure sensors, and accelerometers, have been used for measurements and control applications in various fields, such as automotive, aerospace, industrial, biomedical, sports, and many more. A variety of different materials have been investigated for the development of these sensors. Among them, diamond-like carbon (DLC) thin films have emerged as one of the most promising piezoresistive sensing materials due to their excellent mechanical properties, such as high hardness and high Young’s modulus. At the same time, metal doping has been studied to enhance its electrical properties. Objective: This article explores the use of co-sputtered tungsten-doped diamond-like carbon (W-DLC) thin films as microfabricated strain gauges or piezoresistors. Methods: Different serpentine thin-film resistors were microfabricated on co-sputtered W-DLC thin films using photolithography, metallization, lift-off, and RIE (reactive ion etching) processes. In order to evaluate their piezoresistive sensing performance, gauge factor (GF) measurements were carried out at room temperature using the cantilever beam method. Results: GF values obtained in this study for co-sputtered W-DLC thin films are comparable to those reported for W-DLC films produced and characterized by other techniques, which indicates the feasibility of our approach to use them as sensing materials in piezoresistive sensors. Conclusion: W-DLC thin films produced by the co-magnetron sputtering technique can be considered as sensing materials for miniaturized piezoresistive sensors due to the following key advantages: (i) easy and well-controlled synthesis method, (ii) good piezoresistive properties exhibiting a GF higher than metals, and (iii) thin-film resistors formed by a simple microfabrication process.


2011 ◽  
Vol 679-680 ◽  
pp. 217-220 ◽  
Author(s):  
Mariana A. Fraga

This work compares the piezoresistive properties of SiC thin films produced by two techniques enhanced by plasma, PECVD (plasma enhanced chemical vapor deposition) and RF magnetron sputtering. In order to study these properties, strain gauges based on SiC films produced were fabricated using photolithography techniques in conjunction with lift-off processes. The beam-bending method was used to characterize the SiC strain gauges fabricated.


1988 ◽  
Vol 144 ◽  
Author(s):  
P. Grodzinski ◽  
J.H. Mazur ◽  
A. Nouhi ◽  
R.J. Stirn ◽  
R. Sudharsananu

ABSTRACTElectron diffraction and high resolution electron microscopy (HREM) have been used to investigate the origin of multiple orientation-relationships and defect structure of CdTe thin films grown on (100) GaAs and Si substrates by metal- organic chemical vapor deposition (MOCVD). It has been determined that growth at 370°C with pre-exposure of the GaAs surface to Te following oxide desorption treatment at 600°C resulted in non-parallel epitaxy ((111)CdTe // (100)GaAs), while growth at 300°C following oxide desorption at 500°C with no exposure to Te resulted in parallel epitaxy ((100)CdTe // (100)GaAs). Both epitaxial orientation-relationships were observed on the same substrate for growth at 300°C temperature after 600°C oxide desorption treatment, but with no pre-exposure of the GaAs surface to Te. Preliminary results of growth of CdTe on Si are also reported.


2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.


2013 ◽  
Vol 284-287 ◽  
pp. 225-229 ◽  
Author(s):  
Chao Nan Chen ◽  
Jung Jie Huang ◽  
Gwo Mei Wu ◽  
How Wen Chien

Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.


2011 ◽  
Vol 233-235 ◽  
pp. 2556-2560
Author(s):  
Chun Wei Li ◽  
Qun Li Zhang ◽  
Shu Yan Xu ◽  
Gui Ying Wang

Silicon oxide thin films have many excellent properties such as hardness, optical,dielectric properties,wear-resistance and corrosion-resistance. It has been widely used in optical and microelectronic applications. The preparation methods mainly include phsical vapor deposition and chemical vapor deposition.The paper reviews a few preparation methods of silicon oxide thin films, and compares advantages and disadvantages w ith each other. On the other hand,it point out the tendency of development.


2005 ◽  
Vol 275 (1-2) ◽  
pp. e2481-e2485 ◽  
Author(s):  
Chih-Wei Lin ◽  
Tsan-Yao Cheng ◽  
Li Chang ◽  
Jenh-Yih Juang

Langmuir ◽  
1996 ◽  
Vol 12 (22) ◽  
pp. 5350-5355 ◽  
Author(s):  
Noo Li Jeon ◽  
Paul G. Clem ◽  
David A. Payne ◽  
Ralph G. Nuzzo

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