Chemistry at the Dirac Point of Graphene: Diels-Alder Approach to Reversible Band Gap Engineering and High Mobility Graphene Devices

2014 ◽  
Vol 1658 ◽  
Author(s):  
Santanu Sarkar

ABSTRACTThe Diels-Alder (DA) pericyclic chemistry is one of the most powerful reactions in synthetic chemistry. We have recently shown that the unique zero-band-gap electronic structure of graphene at the Dirac point facilitates the band-gap-dependent DA reaction of graphene, although graphene is the thermochemical reference for carbon. We have shown that in the DA reactions, graphene can function either as a diene or a dienophile (dual nature). Such DA functionalization of graphene when applied to graphene-FET devices allows balanced functionalization (creation of a pair of new sp3 centers or divacancies) at both A and B graphene sublattices, allowing the fabrication of high mobility DA-functionalized single-layer graphene devices (DA-SLG) with acceptable on/off ratio. The chemistry is thermally reversible via retro-DA chemistry, thus allowing reversible engineering of graphene devices.

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4047-4051 ◽  
Author(s):  
Hang Zhang ◽  
Elena Bekyarova ◽  
Jhao-Wun Huang ◽  
Zeng Zhao ◽  
Wenzhong Bao ◽  
...  

2016 ◽  
Vol 27 (31) ◽  
pp. 31LT03 ◽  
Author(s):  
Mintae Ryu ◽  
Paengro Lee ◽  
Jingul Kim ◽  
Heemin Park ◽  
Jinwook Chung

2012 ◽  
Vol 25 (8) ◽  
pp. 1131-1136 ◽  
Author(s):  
Santanu Sarkar ◽  
Hang Zhang ◽  
Jhao-Wun Huang ◽  
Fenglin Wang ◽  
Elena Bekyarova ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114219-114223 ◽  
Author(s):  
Jingul Kim ◽  
Paengro Lee ◽  
Mintae Ryu ◽  
Heemin Park ◽  
Jinwook Chung

By doping magnetic Ce atoms on a single layer graphene, we report a new and efficient means of modifying structural and electronic properties of graphene that opens a temperature-dependent band gap of size up to 0.5 eV.


Author(s):  
Nguyen Van Chuong ◽  
Nguyen Ngoc Hieu ◽  
Nguyen Van Hieu

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.


2012 ◽  
Vol 4 (2) ◽  
pp. e6-e6 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  

Author(s):  
Atiye Pezeshki ◽  
Anoir Hamdi ◽  
Zuchong Yang ◽  
Aura Lubio ◽  
Iman Shackery ◽  
...  

2015 ◽  
Vol 29 (03) ◽  
pp. 1550003 ◽  
Author(s):  
Z. Z. Alisultanov

The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.


RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16823-16825 ◽  
Author(s):  
Chang-Soo Park ◽  
Dongil Chu ◽  
Yoon Shon ◽  
Eun Kyu Kim

We report a band gap opening and p-type doping for single layer graphene by an electrochemical method.


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