Development of a-SiC Thin Film Photoelectrodes and Hybrid PV/a-SiC Devices for Photoelectrochemical Water Splitting

2014 ◽  
Vol 1669 ◽  
Author(s):  
J. Hu ◽  
F. Zhu ◽  
A. Kunrath ◽  
N. Gaillard

ABSTRACTIn this communication, we report our efforts to develop amorphous silicon carbide (a-SiC) thin film photoelectrodes integrated with Si solar cells to form a monolithic, hybrid photovoltaic (PV)/a-SiC device capable of water splitting using sunlight as the only energy source. The main photoelectrochemical (PEC) properties of both the a-SiC photoelectrode and complete hybrid device fabricated by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperature (≤ 200°C) are discussed. The surface modification with metal nanoparticles, which is critical to PEC performances of the hybrid device, is also described. We show that, with the an a-SiC photoelectrode of p-i-n configuration and a high performance silicon heterojunction solar cell as driver, the photocurrent of the hybrid PV/a-SiC device has reached ∼5 mA/cm2. Additionally, the durability of such device has reached ∼800 hours in acidic electrolyte. Finally, we describe a roadmap for achieving the solar-to-hydrogen efficiency of >10% by optimizing the device configuration.

RSC Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 58-64 ◽  
Author(s):  
Kyoung Woo Park ◽  
Seunghee Lee ◽  
Hyunkoo Lee ◽  
Yong-Hwan Cho ◽  
Yong Cheon Park ◽  
...  

High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.


Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.


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