High-performance a-SiGe:H thin film prepared by plasma-enhanced chemical vapor deposition with high plasma power for solar-cell application

2012 ◽  
Vol 209 (12) ◽  
pp. 2527-2531 ◽  
Author(s):  
Baojun Yan ◽  
Lei Zhao ◽  
Bending Zhao ◽  
Jingwei Chen ◽  
Guanghong Wang ◽  
...  
2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.


1998 ◽  
Vol 145 (7) ◽  
pp. 2508-2512 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Sherchenkov ◽  
D. A. Stryahilev ◽  
A. Y. Sazonov ◽  
A. G. Radosel'sky ◽  
...  

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