Switching Behavior in p-Type Hydrogenated Amorphous Silicon with One and Two Blocking Contacts

2002 ◽  
Vol 715 ◽  
Author(s):  
Jian Hu ◽  
Howard M. Branz ◽  
Richard S. Crandall ◽  
Scott Ward ◽  
Qi Wang
Keyword(s):  
Amorphous Silicon ◽  
Electrical Breakdown ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Switching Behavior ◽  
Metal Contacts ◽  
Resistance State ◽  
Metal Filament ◽  
P Type ◽  
Hydrogenated Amorphous

AbstractWe compare switching behaviour in Cr/a-Si:H(p)/Ag and c-Si(p)/a-Si:H(p)/Ag structures containing p-type hydrogenated amorphous silicon. The a-Si:H layer is made by hot wire chemical vapor deposition. We observed that the switching is polarity-dependent only in the sample on c-Si(p). Switching to a low-resistance state occurs at 0.4 mA/cm2 when any of the metal contacts are biased positive. When the c-Si(p) is biased positive holes are injected and no switching occurs even up to 4 A/cm2. We suggest that the switching requires a blocking metal/a-Si(p), possibly because local electrical breakdown initiates metal filament formation.

Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 247-251
Author(s):  
Wei Yuan Wang ◽  
Qing Nan Zhao ◽  
Wen Hui Yuan ◽  
Pu Lei Yang ◽  
Hong Yu Liang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Float Glass ◽  
B Doping ◽  
P Type ◽  
Hydrogenated Amorphous

P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6is 7.82 × 10-4S/cm.

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
P. Stradins ◽  
H. M. Branz ◽  
W. B. Jackson ◽  
R.S. Crandall ◽  
J. Hu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Bias Field ◽  
Switching Behavior ◽  
Contact Material ◽  
Filament Formation ◽  
Metal Structures ◽  
Metal Filament ◽  
Hydrogenated Amorphous

ABSTRACTElectrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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