Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 247-251
Author(s):  
Wei Yuan Wang ◽  
Qing Nan Zhao ◽  
Wen Hui Yuan ◽  
Pu Lei Yang ◽  
Hong Yu Liang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Float Glass ◽  
B Doping ◽  
P Type ◽  
Hydrogenated Amorphous

P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6is 7.82 × 10-4S/cm.

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

Hydrogenated Amorphous Silicon Alloys Prepared by CVD of Higher Silanes

1986 ◽  
Vol 70 ◽  
Author(s):  
Masud Akhtar ◽  
Herbert A. Weaklie
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Dark Conductivity ◽  
Attractive Alternative ◽  
Silicon Alloys ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon may be deposited at relatively low temperatures, where the density of defects may be expected to be low, by the chemical vapor deposition (CVD) of higher silanes. This method is an attractive alternative to plasma deposition techniques. We describe here the preparation of a-Si:H and related alloys incorporating carbon, germanium, and fluorine. a-Si:H films were deposited on heated substrates in the range 365°C-445°C by CVD of Si2H6 and Si3H8. The optical gap (Eg) ranged from 1.4 to 1.7 eV and the properties of films deposited from either Si2 H6 or Si3 H8 were quite similar. Wide band gap (Eg=2 eV) alloys of a-SiC:H doped with boron were prepared by CVD of disilane, methyl silane, and diborane. We also prepared variable band gap a-SiC:H alloys by substituting F2C= CFH for methylsilane, and these films were found to have approximately 1–2% fluorine incorporated. The dark conductivity of the boron doped a-SiC:H alloys dep~sited from either carbon source ranged from ix10-7 to 6x10-7 (ohm-cm)-1. We also prepared low band aap alloys of Si and Ge by CVD of trisilane and germane. The band gap of a film containing 20% Ge was 1.5 eV; however, the photoconductivity of the film was relatively low.

Switching Behavior in p-Type Hydrogenated Amorphous Silicon with One and Two Blocking Contacts

2002 ◽  
Vol 715 ◽  
Author(s):  
Jian Hu ◽  
Howard M. Branz ◽  
Richard S. Crandall ◽  
Scott Ward ◽  
Qi Wang
Keyword(s):  
Amorphous Silicon ◽  
Electrical Breakdown ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Switching Behavior ◽  
Metal Contacts ◽  
Resistance State ◽  
Metal Filament ◽  
P Type ◽  
Hydrogenated Amorphous

AbstractWe compare switching behaviour in Cr/a-Si:H(p)/Ag and c-Si(p)/a-Si:H(p)/Ag structures containing p-type hydrogenated amorphous silicon. The a-Si:H layer is made by hot wire chemical vapor deposition. We observed that the switching is polarity-dependent only in the sample on c-Si(p). Switching to a low-resistance state occurs at 0.4 mA/cm2 when any of the metal contacts are biased positive. When the c-Si(p) is biased positive holes are injected and no switching occurs even up to 4 A/cm2. We suggest that the switching requires a blocking metal/a-Si(p), possibly because local electrical breakdown initiates metal filament formation.

FULL-COLOR PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC SOURCE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1057-1061 ◽  
Author(s):  
JUN XU ◽  
TIANFU MA ◽  
XIAOHUI HUANG ◽  
LI WANG ◽  
WEI LI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous ◽  
Electro Luminescence ◽  
Organic Source

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films (0 < x ≤ 1) were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was altered over a wide range by changing the gas ratio of C8H10 to SiH4, the maximum value can be reached as high as 3.6eV. Photoluminescence (PL) measurements were carried out at room temperature by using a Xe lamp as an excitation light. It was found that the PL peak is blue shifted with increasing optical band gap. The xylene-based a-SiC:H electro-luminescence (EL) device structure was also fabricated and room temperature EL behavior was investigated. It was found that the EL peak depended on the band gap of a-C:H films and a stable emission can be obtained by using the suitable structure parameters.

Measurements of the Transient Photoconductivity During the Growth of A-Si:H Multilayers

1990 ◽  
Vol 192 ◽  
Author(s):  
H. C. Neitzert ◽  
A. Werner ◽  
W. Kunst ◽  
M. Kunst
Keyword(s):  
Amorphous Silicon ◽  
Doping Concentration ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Deposition Process ◽  
Transient Photoconductivity ◽  
Multiple Layer ◽  
Layer Structures ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition process of multiple layer structures of intrinsic and p-type hydrogenated amorphous silicon was followed by measuring the microwave detected transient photoconductivity (TRMC) during the film growth. In an i-p-i structure we can show that after deposition of an upper layer of about 500 nm, former deposited layers do not influence the TRMC-signal any more. In an i-p+-i-p structure we can clearly distinguish between p-layers of different doping concentration.

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