Graphitic Schottky Contacts to Si formed by Energetic Deposition

2015 ◽  
Vol 1786 ◽  
pp. 51-56 ◽  
Author(s):  
Mohammad Saleh N Alnassar ◽  
Patrick W. Leech ◽  
Geoff K. Reeves ◽  
Anthony S. Holland ◽  
Desmond W. M. Lau ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Carbon Films ◽  
Schottky Contacts ◽  
Vacuum Arc ◽  
Substrate Bias ◽  
Effective Work ◽  
Effective Work Function ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Filtered Cathodic Vacuum Arc

ABSTRACTCarbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100 °C has produced carbon diodes with rectification ratios of ∼ 3 × 106, saturation currents of ∼0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO2) layer from the current/voltage characteristics of the diodes.

scholarly journals Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos
Keyword(s):  
Thermal Stability ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Cross Sectional ◽  
Prolonged Heating ◽  
Filtered Cathodic Vacuum Arc ◽  
Thermal Stability Of

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

Etching behaviour of pure and metal containing amorphous carbon films prepared using filtered cathodic vacuum arc technique

2002 ◽  
Vol 195 (1-4) ◽  
pp. 107-116 ◽  
Author(s):  
L.J Yu ◽  
D Sheeja ◽  
B.K Tay ◽  
Daniel H.C Chua ◽  
W.I Milne ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
Filtered Cathodic Vacuum Arc

FCVA-Synthesized Tetrahedral Amorphous Carbon Films for Biomedical Applications

2007 ◽  
Vol 336-338 ◽  
pp. 1577-1580 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Wu Bao Yang ◽  
X. Chang
Keyword(s):  
Amorphous Carbon ◽  
Biomedical Applications ◽  
Pure Titanium ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Negative Bias Voltage ◽  
Tetrahedral Amorphous Carbon ◽  
In Vitro Measurements ◽  
Filtered Cathodic Vacuum Arc

Tetrahedral amorphous carbon (ta-C) films were deposited onto Si(100) wafers by using filtered cathodic vacuum arc technique (FCVA). The influence of the negative bias voltage applied to substrates on film structures was studied by Raman spectroscopy, X-ray photoemission spectroscopy (XPS). The ta-C films showed maximal sp3 fractions 87%, the hardness and elastic modulus of the ta-C film is 72 and 480 GPa, respectively. In vitro measurements of contact angle and platelet adhesion were applied to evaluate the biocompatibility of the ta-C films in comparison with that of NiTi, 316L and pure titanium. The results show that the ta-C films have hydrophobicity and exhibit better hemocompatibility which are very suitable for biomedical applications.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Precision Coating of ta-C Films on Quartz Surfaces

2020 ◽  
Author(s):  
Kotaro Kawai ◽  
Yuki Hirata ◽  
Hiroki Akasaka ◽  
Naoto Ohtake
Keyword(s):  
Cutting Tools ◽  
Three Dimensional ◽  
High Hardness ◽  
Carbon Films ◽  
Vacuum Arc ◽  
High Wear Resistance ◽  
Chemical Inertness ◽  
Filtered Cathodic Vacuum Arc ◽  
Surface Morphologies

Abstract Diamond-like carbon (DLC) films have excellent properties such as high hardness, low friction coefficient, high wear resistance, chemical inertness and so on. Because DLC film is considered as an effective coating material to improve their surface properties, this films are used in various applications such as parts for automobiles engines, hard disk surfaces, cutting tools and dies, and so on. DLC films consist of a mixture of sp2 bonded carbon atoms and sp3 bonded carbon atoms. Among them, ta-C film is known as the hardest and strongest film since it mainly consists of sp3 bonded carbon atoms. One of deposition methods to form ta-C is Filtered Cathodic Vacuum Arc (FCVA). The characteristic of this method is that it is possible to remove the droplets and form a high-quality film.. However, even though lots of mechanical components which require ta-C coating have three-dimensionally shapes, it is difficult to coat ta-C film three dimensionally by using FCVA process. At present, researches on 3D deposition of amorphous carbon films on three dimensional components is still insufficient, and investigation reports on the deposition mechanism and characterization of the deposited films are even more limited. In this study, we tried to deposit films on 3D components by the FCVA method and evaluated the microstructure and surface morphologies of films. Although films were coated successfully in the entire surfaces, different properties were showed depending on the location of components. These properties were investigated by Raman spectroscopy and laser microscope.

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

Sign in / Sign up

Export Citation Format

Share Document