Effect of Rare-Earth Cation Doping on Enhancement of The Thermoelectric Power of Zinc Oxide

2005 ◽  
Vol 886 ◽  
Author(s):  
Kiyoshi Fuda ◽  
Shigeaki Sugiyama

ABSTRACTWe investigated the effects of doping of rare-earth ions (Ce, Pr, Nd, Sm, and Eu) on the thermoelectric properties of ZnO, especially Seebeck coefficient in the temperature range from 100 to 800 °C. The data were scattered more or less depending on the doping species, but it was commonly found that the rare-earth doped samples showed higher Seebeck coefficients with compared to those for Al-doped samples. The highest values were observed for Nd-doped one ranging from -360 to -400μVK−1 in the temperature range observed, the lowest ones for Pr-doped one ranging from -250 to -310 μVK−1, whereas those for Al-doped one ranging from -80 to -140 μVK−1. It should also be pointed out that the power factor at 100 °C for Pr-doped ZnO was twice or more as much as that for Al-doped one. From the results it seemed that rare earth doping is effective for enhancement of thermoelectric power of ZnO.

1996 ◽  
Vol 422 ◽  
Author(s):  
B. J. H. Stadler ◽  
J. P. Lorenzo

AbstractRare earth (Gd, Eu, Er) doped InGaAs and InP layers were grown by liquid phase epitaxy (LPE). The refractive index of these layers was observed to increase with the addition of the rare earth ions. The observed increase could not be explained by changes in host composition as typically calculated from changes in lattice parameter. In fact, the refractive index was seen to increase (∼0.25) by an order of magnitude more than would be expected by the change in the lattice parameter (∼0.02). The increased refractive indices of InP layers due to Er-doping enabled waveguiding. These findings suggest that optically active waveguide devices can be fabricated from semiconducting hosts by simple rare earth doping.


1986 ◽  
Vol 5 (7) ◽  
pp. 723-724 ◽  
Author(s):  
S. Bhushan ◽  
Deepti Diwan

MRS Advances ◽  
2019 ◽  
Vol 4 (33-34) ◽  
pp. 1895-1904
Author(s):  
Lihong Su ◽  
Kan Chen ◽  
Yongqiang Liu ◽  
ZiAo Zou ◽  
Lihua Su

Abstract:Ultraviolet light-emitting diodes (UVLEDs) with phosphor materials have considerable advantages over traditional illumination devices. Doping with rare earth ions can modify the optical spectrum of phosphor materials, but rare earths are very expensive. Thus, replacing rare earths with a common material would provide a great potential for the wide application in the future. In this study, we discovered that a novel type of semiconductor nanometre powder, namely manganese cobalt nickel copper oxide (MCNC), is able to emit blue-green wavelength spectrum when exited by 365-400nmUVLED. In addition, MCNC shows less attenuation of luminescence efficiency than other UVLED phosphor materials doped with rare earths with temperature increase. It is thus concluded that MCNC is a promising low-cost material to replace rare earths to adjust the optical spectrum wavelength of UVLED. This is the first time that nano-scale MCNC is reported to possess the property to change the optical spectrum wavelength of UVLED. This provides a new mechanical and nanometer phosphor material without rare earth doping to shift the wavelength spectrum.


2000 ◽  
Vol 5 (S1) ◽  
pp. 817-823
Author(s):  
H. J. Lozykowski ◽  
W. M. Jadwisienczak ◽  
I. Brown

In this paper we have reported the observation of visible photoluminescence (PL) and cathodoluminescence (CL) of Pr implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 11000 C in NH3, N2, Ar2, and in forming gas N2 +H2, at atmospheric pressure to recover implantation damages and activate the rare earth ions. The sharp characteristic emission lines corresponding to Pr3+ intra-4fn-shell transitions are resolved in the spectral range from 350 nm to 1150 nm, and observed over the temperature range of 12 K-335 K. The PL and CL decay kinetics measurement was performed for 3P1, 3P0 and 1D2 levels.


2013 ◽  
Vol 2 (3) ◽  
pp. 201-212 ◽  
Author(s):  
Feng Jiang ◽  
Zhijian Peng ◽  
Yanxu Zang ◽  
Xiuli Fu

2011 ◽  
Vol 230-232 ◽  
pp. 992-995 ◽  
Author(s):  
Bing Cheng Xia ◽  
Rui Fang Zhang ◽  
Hua An ◽  
Yan Hong Zhao ◽  
Xiao Jing Wang

Rare earth doped ZnO particles were synthesized by low temperature hydrothermal method. They showed fine pin-shaped growing along the C axial direction with the diameter about 9-48 nm. The structures of zinc oxide and La doped ZnO were characterized through X-ray powder diffraction (XRD), transmission electron microscope (TEM), Uv-vis diffuse spectrum (UV – vis DRS). Our results indicated that the doping of La results in the crystal cell of ZnO inflating, the band gap shift up to the ultraviolet region with the increase of La doping concentration.


2006 ◽  
Vol 203 (11) ◽  
pp. 2723-2728 ◽  
Author(s):  
Nozomu Tsuboi ◽  
Takanobu Hoshino ◽  
Satoshi Kobayashi ◽  
Keizo Kato ◽  
Futao Kaneko

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