Anti–scatter coating on slab laser head for preventing evanescent wave by photo–oxidation of silicone oil

2005 ◽  
Vol 890 ◽  
Author(s):  
Takayuki Funatsu ◽  
Nobuhiro Sato ◽  
Yuji Sato ◽  
Takayuki Okamoto ◽  
Masataka Murahara

ABSTRACTA low refractive index, hard SiO2 film was photochemically coated on the surface of slab laser head at room temperature by using silicone oil and a Xe2 excimer lamp. Nd+:glass slab laser produces high power laser because the light is amplified with a repeated total reflection in the laser medium. However, an evanescent wave arises on the total reflection interface, which causes a loss of the light energy. A low refractive index film 2 μm thick is, therefore, needed to prevent this problem. The vacuum vapor deposition method as a dry process and the spin-coating method as a wet process are generally used for making optical thin films. The former method can laminate a hard thin film, but requires temperatures above 500°C, and the thermal denaturation of the optical substrate is unavoidable. On the other hand, the latter method can form a low refractive index thin film, but the produced thin film has a poor adhesiveness and a low hardness. Besides, all these films are inferior in water resistance. We, therefore, formed a water-resistant, hard, and low refractive index protective coating directly on the laser glass surface at room temperature with photochemical reaction by the Xe2 excimer lamp.

2004 ◽  
Vol 843 ◽  
Author(s):  
Y. Tezuka ◽  
M. Murahara

ABSTRACTA transparent, low refractive index SiO 2 film was photo-chemically laminated on a glass slab laser head by the Xe2* excimer lamp in the atmosphere of NF3 and O2 mixed gas at room temperature; which made it possible to inhibit the decrease in the laser output power caused by the evanescent wave leakage.The transparent SiO2 film of 260nm thickness was laminated on the non-heated substrate by the lamp irradiation for one hour. The hardness of the film before annealing was 3 by Mohs’ Scale of Hardness, and its hardness improved to 5 after annealing at 250 degrees centigrade for one hour. The refractive index of the film was 1.42, being lower than the index of silica glass that is 1.46. Furthermore, the transmittance in the visible region increased by 2% with it s antireflection coating.


2002 ◽  
Vol 750 ◽  
Author(s):  
Y. Ogawa ◽  
M. Murahara

ABSTRACTA transparent low refractive index SiO2 film laminated on a glass substrate at room temperature by photochemical reactions with the Xe2* excimer lamp (172nm). This SiO2 film grown on the fused silica glass was proved to avoid reflection of light.A refractive index of the SiO2 film was 1.36. After annealing the film for one hour at 200 degrees centigrade, the refractive index increased to 1.42. The refractive index increased as the F atom density in the SiO 2 film decreased.


2014 ◽  
Vol 71 (1) ◽  
pp. 168-175 ◽  
Author(s):  
Hung Sen Wei ◽  
Chien Cheng Kuo ◽  
Cheng Chung Jaing ◽  
Ya Chen Chang ◽  
Cheng Chung Lee

2007 ◽  
Vol 244 (8) ◽  
pp. 3002-3008 ◽  
Author(s):  
E. F. Schubert ◽  
J. K. Kim ◽  
J.-Q. Xi

2005 ◽  
Vol 901 ◽  
Author(s):  
Jingqun Xi ◽  
Jong Kyu Kim ◽  
Dexian Ye ◽  
Jasbir S. Juneja ◽  
T.-M. Lu ◽  
...  

AbstractThe refractive index contrast in dielectric multilayer structures, optical resonators and photonic crystals is an important figure of merit, which creates a strong demand for high quality thin films with a very low refractive index. SiO2 nano-rod layers with low refractive indices n = 1.08, the lowest ever reported in thin-film materials, is grown by oblique-angle e-beam deposition of SiO2 with vapor incident angle 85 degree. Scanning electron micrographs reveal a highly porous columnar structure of the low-refractive-index (low-n) film. The gap between the SiO2 nano-rods is ≤50 nm, i.e. much smaller than the wavelength of visible light, and thus sufficiently small to make scattering very small. Optical micrographs of the low-n film deposited on a Si substrate reveal a uniform specular film with no apparent scattering. The unprecedented low index of the SiO2 nano-rod layer is confirmed by both ellipsometry measurements and thin film interference measurements. A single-pair distributed Bragg reflector (DBR) employing the SiO2 nano-rod layer is demonstrated to have enhanced reflectivity, showing the great potential of low-n films for applications in photonic structures and devices.


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