Nanotubes in spray deposited Nanocrystalline HgTe: I thin films

2005 ◽  
Vol 901 ◽  
Author(s):  
Ranga Rao Arnepalli ◽  
Dutta Viresh

AbstractHgTe nanotubes have been prepared by spray deposition of solvothermally synthesized iodine doped HgTe nanoparticles on glass substrates at low temperature (200°C). Spray deposition was done without voltage and with an externally applied voltage (700 V) to the nozzle and it is found from TEM studies that the length of the nanotubes increases from ∼4µm in case of without voltage to ∼ 6µm in case of the applied voltage, with an average diameter of ∼ 45nm. The nanotubes are found to have cubic lattice structure having Hg:Te in stoichimetric ratio (52:48).

2006 ◽  
Vol 922 ◽  
Author(s):  
Ranga Rao Arnepalli ◽  
Viresh Dutta

AbstractHgSe nanotubes have been prepared by spray deposition of solvothermally synthesized HgSe: Iodine nanoparticles on glass substrates at low temperature (200°C). Spray deposition was done without voltage and with an externally applied voltage (700V) to the nozzle and it is found from TEM studies that the average length of the nanotubes increases in case of the films deposited with applied voltage compared to that of without voltage. But there is no change in the average diameter (~ 35 nm). The nanotubes are found to have cubic crystal structure. Iodine is found to act as a catalyst and helps in the growth of nanotubes. The growth mechanism of the nanotubes is analogous to the well known solution-liquid-solid/vapor-liquid-solid (SLS/VLS) mechanism. The EDAX analysis of the tip of the nanotube reveals the presence of Hg, Se and Iodine in the ratio of 73:2:24 for the spot size of <1μm.


1995 ◽  
Vol 67 (15) ◽  
pp. 2176-2178 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Kim M. Jones ◽  
David S. Ginley

1999 ◽  
Vol 107 (1251) ◽  
pp. 1099-1104 ◽  
Author(s):  
Toshio KAMIYA ◽  
Yoshiteru MAEDA ◽  
Kouichi NAKAHATA ◽  
Takashi KOMARU ◽  
Charles M. FORTMANN ◽  
...  

1998 ◽  
Vol 547 ◽  
Author(s):  
Michael P. Remington ◽  
Smuruthi Kamepalli ◽  
Philip Boudjouk ◽  
Bryan R. Jarabek ◽  
Dean G. Grier ◽  
...  

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.


2006 ◽  
Vol 496 (1) ◽  
pp. 112-116 ◽  
Author(s):  
A.N. Banerjee ◽  
C.K. Ghosh ◽  
K.K. Chattopadhyay ◽  
Hideki Minoura ◽  
Ajay K. Sarkar ◽  
...  

2018 ◽  
Vol 47 (32) ◽  
pp. 11091-11096
Author(s):  
Dachao Yuan ◽  
Shuang Guo ◽  
Shuaihang Hou ◽  
Yuejin Ma ◽  
Jianjun Hao ◽  
...  

Effect of structural defects on the low temperature thermoelectric transport properties of c-axis-textured BiCuSeO thin films on amorphous glass substrates.


2012 ◽  
Vol 22 (15) ◽  
pp. 3098-3098 ◽  
Author(s):  
Matejka Podlogar ◽  
Jacob J. Richardson ◽  
Damjan Vengust ◽  
Nina Daneu ◽  
Zoran Samardžija ◽  
...  

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